AOD417

SymbolVDSVGSIDMIAREARTJ,TSTGSymbolTypMax16.7254050RθJC2.53MaximumJunction-to-CaseDSteady-State°C/WThermalCharacteristicsParameterUnitsMaximumJunction-to-AmbientAt≤10sRθJA°C/WMaximumJunction-to-AmbientASteady-State°C/WWTA=70°C1.6JunctionandStorageTemperatureRange-55to175PowerDissipationATA=25°CPDSM2.5ARepetitiveavalancheenergyL=0.3mHCmJPowerDissipationBTC=25°CPDWTC=100°CAvalancheCurrentCContinuousDrainCurrentB,GMaximumUnitsParameterTA=25°CGTA=100°CAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedIDGate-SourceVoltageDrain-SourceVoltage-30PulsedDrainCurrentC-25-20-60VV±2025A-143050°CAOD417P-ChannelEnhancementModeFieldEffectTransistorFeaturesVDS(V)=-30VID=-25A(VGS=-10V)RDS(ON)34mΩ(VGS=-10V)RDS(ON)55mΩ(VGS=-4.5V)100%UISTested!100%RgTested!GeneralDescriptionTheAOD417usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.-RoHSCompliant-HalogenFree*GDSGTO-252D-PAKTopViewSBottomViewDGSAlpha&OmegaSemiconductor,Ltd.=55°C-5IGSS±100nAVGS(th)-1-1.9-3VID(ON)-60A2734TJ=125°C364055mΩgFS18SVSD-0.75-1VIS-6ACiss920pFCoss140pFCrss90pFRg69ΩQg(10V)16.2nCQg(4.5V)8.2nCQgs2.9nCQgd3.6nCtD(on)8nstr30nstD(off)22nstf26nstrr23nsQrr14nCTHISPRODUCTHASBEENDESIGNEDANDQUALIFIEDFORTHECONSUMERMARKET.APPLICATIONSORUSESASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSARENOTAUTHORIZED.AOSDOESNOTASSUMEANYLIABILITYARISINGOUTOFSUCHAPPLICATIONSORUSESOFITSPRODUCTS.AOSRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE.MaximumBody-DiodeContinuousCurrentInputCapacitanceOutputCapacitanceTurn-OnDelayTimeDYNAMICPARAMETERSVGS=0V,VDS=-15V,f=1MHzGateDrainChargeTotalGateCharge(10V)VGS=-10V,VDS=-15V,ID=-20ATurn-OnRiseTimeTurn-OffDelayTimeVGS=-10V,VDS=-15V,RL=0.75Ω,RGEN=0.75ΩGateresistanceVGS=0V,VDS=0V,f=1MHzTurn-OffFallTimeSWITCHINGPARAMETERSTotalGateCharge(4.5V)GateSourceChargemΩVGS=-4.5V,ID=-7AIS=-1A,VGS=0VVDS=-5V,ID=-20ARDS(ON)StaticDrain-SourceOn-ResistanceForwardTransconductanceDiodeForwardVoltageIDSSμAGateThresholdVoltageVDS=VGSID=-250μAVDS=-24V,VGS=0VVDS=0V,VGS=±20VZeroGateVoltageDrainCurrentGate-BodyleakagecurrentElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)STATICPARAMETERSParameterConditionsBodyDiodeReverseRecoveryTimeBodyDiodeReverseRecoveryChargeIF=-20A,dI/dt=100A/μsDrain-SourceBreakdownVoltageOnstatedraincurrentID=-250μA,VGS=0VVGS=-10V,VDS=-5VVGS=-10V,ID=-20AReverseTransferCapacitanceIF=-20A,dI/dt=100A/μsA:ThevalueofRθJAismeasuredwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.ThePowerdissipationPDSMisbasedonRθJA(10s)andthemaximumallowedjunctiontemperatureof150°C.Thevalueinanygivenapplicationdependsontheuser'sspecificboarddesign,andthemaximumtemperatureof175°CmaybeusedifthePCBallowsit.B.ThepowerdissipationPDisbasedonTJ(MAX)=175°C,usingjunction-to-casethermalresistance,andismoreusefulinsettingtheupperdissipationlimitforcaseswhereadditionalheatsinkingisused.C:Repetitiverating,pulsewidthlimitedbyjunctiontemperatureTJ(MAX)=175°C.D.TheRθJAisthesumofthethermalimpedencefromjunctiontocaseRθJCandcasetoambient.E.ThestaticcharacteristicsinFigures1to6areobtainedusing300μspulses,dutycycle0.5%max.F.Thesecurvesarebasedonthejunction-to-casethermalimpedencewhichismeasuredwiththedevicemountedtoalargeheatsink,assumingamaximumjunctiontemperatureofTJ(MAX)=175°C.G.Themaximumcurrentratingislimitedbybond-wires.H.Thesetestsareperformedwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.TheSOAcurveprovidesasinglepulserating.*Thisdeviceisguaranteedgreenafterdatacode8X11(Sep1ST2008).Rev1:Sep.2008Alpha&OmegaSemiconductor,Ltd.=-10mA,VGS=0V850185900102030405060012345-VDS(Volts)Figure1:On-RegionCharacteristics-ID(A)VGS=-3.5V-6V-4.5V-10V051015202511.522.533.544.55-VGS(Volts)Figure2:TransferCharacteristics-ID(A)2025303540455055600510152025-ID(A)Figure3:On-Resistancevs.DrainCurrentandGateVoltageRDS(ON)(mΩΩΩΩ)1.0E-061.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+010.00.20.40.60.81.0-VSD(Volts)Figure6:Body-DiodeCharacteristics-IS(A)25°C125°C-40°C0.60.811.21.41.6-50-250255075100125150175Temperature(°C)Figure4:On-Resistancevs.JunctionTemperatureNormalizedOn-ResistanceVGS=-10VID=-20AVGS=-4.5VID=-7A20304050607080345678910-VGS(Volts)Figure5:On-Resistancevs.Gate-SourceVoltageRDS(ON)(mΩΩΩΩ)25°C125°CVDS=-5VVGS=-4.5VVGS=-10V25°C125°CID=-20A-40°CAlpha&OmegaSemiconductor,Ltd.=-10mA,VGS=0V8501859002468100369121518-Qg(nC)Figure7:Gate-ChargeCharacteristics-VGS(Volts)0250500750100012501500051015202530-VDS(Volts)Figure8:CapacitanceCharacteristicsCapacitance(pF)Ciss040801201602000.00010.0010.010.1110PulseWidth(s)Figure10:SinglePulsePowerRatingJunction-to-Case(NoteF)Power(W)0.010.11100.000010.00010.0010.010.11101001000PulseWidth(s)Figure11:NormalizedMaximumTransientThermalImpedance(NoteF)Zθθθθ