1MBI400HH-120L-50

1(DB)ActivePFCIndustrialmachinesMaximumRatingsandCharacteristicsAbsoluteMaximumRatings(atTC=25°Cunlessotherwisespecified)ItemsSymbolsConditionsMaximumratingsUnitsCollector-EmittervoltageVCES1200VGate-EmittervoltageVGES±20VCollectorcurrentICContinuousTC=25°C600ATC=80°C400Icp1msTC=25°C1200TC=80°C800-IC75-ICpluse1ms150CollectorPowerDissipationPC1device2500WReversevoltageforFWDVR1200VForwordcurrentforFWDIFContinuous400AIFpulse1ms800JunctiontemperatureTj+150°CStoragetemperatureTstg-40to+125Isolationvoltagebetweenterminalandcopperbase(*1)VisoAC:1min.2500VACbetweenthermistorandothers(*2)ScrewTorqueMounting(*3)-3.5NmTerminals(*4)4.5Note*1:Allterminalsshouldbeconnectedtogetherwhenisolationtestwillbedone.Note*2:Twothermistorterminalsshouldbeconnectedtogether,eachotherterminalsshouldbeconnectedtogetherandshortedtobaseplatewhenisolationtestwillbedone.Note*3:RecommendableValue:Mounting2.5to3.5Nm(M5orM6)Note*4:RecommendableValue:Terminals3.5to4.5Nm(M6)21MBI400HH-120L-50(atTj=25°Cunlessotherwisespecified)ItemsSymbolsConditionsCharacteristicsUnitsmin.typ.max.IGBT+InverseDiodeZerogatevoltagecollectorcurrentICESVCE=1200VVGE=0V--4.0mAGate-EmitterleakagecurrentIGESVCE=0VVGE=±20V--800nAGate-EmitterthresholdvoltageVGE(th)VCE=20VIC=400mA5.76.26.7VCollector-EmittersaturationvoltageVCE(sat)(terminal)IC=400AVGE=15VTj=25°C-3.303.60VTj=125°C-4.30-VCE(sat)(chip)Tj=25°C-3.103.40Tj=125°C-4.00-InputcapacitanceCiesVCE=10V,VGE=0V,f=1MHz-35-nFTurn-ontimetonVCC=600VIC=400AVGE=±15VRG=1.6ΩLS=20nH-0.200.60μstr-0.100.50tr(i)-0.30-Turn-offtimetoff-0.400.70tf-0.050.20ForwardonvoltageVF(terminal)IF=75AVGE=0VTj=25°C-1.802.30VTj=125°C-1.95-VF(chip)Tj=25°C-1.702.15Tj=125°C-1.85-FWDReverseCurrentIRVCE=1200V--1.0mAForwardonvoltageVF(terminal)IF=400AVGE=0VTj=25°C-8.209.80VTj=125°C-4.50-VF(chip)Tj=25°C-8.009.60Tj=125°C-4.30-ReverserecoverytimetrrIF=400A--0.20μsLeadresistance,terminal-chip(*5)Rlead-0.48-mΩThermistorResistanceRT=25°C-5000-ΩT=125°C465495520BvalueBT=25/50°C330533753450KNote*5:Biggestinternalterminalresistanceamongarm.ThermalresistancecharacteristicsItemsSymbolsConditionsCharacteristicsUnitsmin.typ.max.Thermalresistance(1device)Rth(j-c)IGBT--0.036°C/WInverseDiode--0.460FWD--0.084ContactThermalresistanceRth(c-f)withThermalCompound(*6)-0.0125-Note*6:Thisisthevaluewhichisdefinedmountingontheadditionalcoolingfinwiththermalcompound.23IGBTModules(Representative)0200400600800100001234567802004006008001000012345678020040060080010000123456702468105101520250.11.010.0100.00102030020040060080010001200VGE=20V12V10V8VTj=125°CTj=25°CIC=800AIC=400AIC=200ACiesCoesCresVGEVCE15VVGE=20V12V10V8V15VDynamicGatecharge(typ.)VCC=600V,IC=400A,Tj=25oCCollectorcurrentvs.Collector-Emittervoltage(typ.)Tj=25°C/chipCollectorcurrentvs.Collector-Emittervoltage(typ.)Tj=125°C/chipCollectorcurrentvs.Collector-Emittervoltage(typ.)VGE=15V/chipCollector-Emittervoltagevs.Gate-Emittervoltage(typ.)Tj=25°C/chipCollector-Emittervoltage:VCE[V]Collectorcurrent:IC[A]Collector-Emittervoltage:VCE[V]Collectorcurrent:IC[A]Collector-Emittervoltage:VCE[V]Collectorcurrent:IC[A]Capacitance:Cies,Coes,Cres[nF]Gate-Emittervoltage:VGE[V]Collector-Emittervoltage:VCE[V]Gatecharge:Qg[nC]Collector-Emittervoltage:VCE[200V/div]Gate-Emittervoltage:VGE[5V/div]Capacitancevs.Collector-Emittervoltage(typ.)VGE=0V,f=1MHz,Tj=25°CCollector-Emittervoltage:VCE[V]41MBI400HH-120L-50(25°C)Eon(125°C)Eoff(125°C)Err(25°C)Eon(25°C)Err(125°C)Switchinglossvs.Collectorcurrent(typ.)VCC=600V,IC=400A,VGE=±15V,Tj=25oCSwitchingtimevs.Gateresistance(typ.)Switchingtimevs.Collectorcurrent(typ.)Switchingtimevs.Collectorcurrent(typ.)VCC=600V,VGE=±15V,RG=1.6Ω,Tj=25oCVCC=600V,VGE=±15V,RG=1.6Ω,Tj=125oCVCC=600V,VGE=±15V,RG=1.6Ω+VGE=15V,-VGE=15V,RG=1.6Ω,Tj=125oCSwitchinglossvs.Gateresistance(typ.)Reversebiassafeoperatingarea(max.)VCC=600V,IC=400A,VGE=±15V,Tj=125oCCollectorcurrent:IC[A]Collectorcurrent:IC[A]Gateresistance:RG[Ω]Collectorcurrent:IC[A]Gateresistance:RG[Ω]Collector-Emittervoltage:VCE[V]Collectorcurrent:IC[A]Switchingloss:Eon,Eoff,Err[mJ/pulse]Switchingloss:Eon,Eoff,Err[mJ/pulse]Switchingtime:ton,tr,toff,tf[nsec]Switchingtime:ton,tr,toff,tf[nsec]Switchingtime:ton,tr,toff,tf[nsec]45IGBTModules