TLP181-datasheet-en-20091112

TLP1812009-11-121TOSHIBAPhotocouplerGaAsIred&Photo−TransistorTLP181OfficeMachineProgrammableControllersACAdapterI/OInterfaceBoardTheTOSHIBAminiflatcouplerTLP181isasmalloutlinecoupler,suitableforsurfacemountassembly.TLP181consistofaphototransistoropticallycoupledtoagalliumarsenideinfraredemittingdiode.SinceTLP181issmallerthanDIPpackage,it’ssuitableforhigh-densitysurfacemountingapplicationssuchasprogrammablecontrollers•Collector−emittervoltage:80V(min)•Currenttransferratio:50%(min)RankGB:100%(min)•Isolationvoltage:3750Vrms(min)•OperationTemperature:-55to110˚C•SafetyStandardsULrecognized:UL1577,FileNo.E67349cULrecognized:CSAComponentAcceptanceServiceNo.5AFileNo.E67349•BSIapproved:BSEN60065:2002,certificateNo.8285BSEN60950-1:2006certificateNo.8286Option(V4)typeVDEapproved:EN60747-5-2MaximumOperatingInsurationVoltage:565VpkHighestPermissibleOvervoltage:6000Vpk(Note):WhenaEN60747-5-2approvedtypeisneeded,Pleasedesignate“Option(V4)”PinConfiguration(topview)61:Anode3:Cathode4:Emitter6:Collector413UnitinmmTOSHIBA11−4C1Weight:0.09g(Typ.)TLP1812009-11-122CurrentTransferRatioCurrentTransferRatio(%)(IC/IF)IF=5mA,VCE=5V,Ta=25°CTypeClassification*1MinMaxMarkingOfClassificationBlank50600Blank,Y,Y■,YE,G,G■,GR,B,B■,BL,GBRankY50150YERankGR100300GRRankBL200600BLRankGB100600GBRankYH75150Y■RankGRL100200GRankGRH150300G■TLP181RankBLL200400B*1:EX,RankGB:TLP181(GB)(Note)Application,typenameforcertificationtest,pleaseusestandardproducttypename,i,e.TLP181(GB):TLP181TLP1812009-11-123AbsoluteMaximumRatings(Ta=25°C)CharacteristicSymbolRatingUnitForwardcurrentIF50mAForwardcurrentdetatingΔIF/°C−1.4(Ta≥89°C)mA/°CPulseforwardcurrent(100μspulse,100pps)IFP1AReversevoltageVR5VLEDJunctiontemperatureTj125°CCollector−emittervoltageVCEO80VEmitter−collectorvoltageVECO7VCollectorcurrentIC50mACollectorpowerdissipation(1Circuit)PC150mWCollectorpowerdissipationderating(1CircuitTa≥25°C)ΔPC/°C−1.5mW/°CDetectorJunctiontemperatureTj125°CStoragetemperaturerangeTstg−55to125°COperatingtemperaturerangeTopr−55to110°CLeadsolderingtemperatureTsol260(10s)°CTotalpackagepowerdissipationPT200mWTotalpackagepowerdissipationderating(Ta≥25°C)ΔPT/°C−2.0mW/°CIsolationvoltage(AC,1min.,R.H.≤60%)(Note1)BVS3750VrmsNote:Usingcontinuouslyunderheavyloads(e.g.theapplicationofhightemperature/current/voltageandthesignificantchangeintemperature,etc.)maycausethisproducttodecreaseinthereliabilitysignificantlyeveniftheoperatingconditions(i.e.operatingtemperature/current/voltage,etc.)arewithintheabsolutemaximumratings.PleasedesigntheappropriatereliabilityuponreviewingtheToshibaSemiconductorReliabilityHandbook(“HandlingPrecautions”/“DeratingConceptandMethods”)andindividualreliabilitydata(i.e.reliabilitytestreportandestimatedfailurerate,etc).(Note1)Deviceconsideredatwo−terminaldevice:Pin1,3shortedtogetherandpins4,6shortedtogetherRecommendedOperatingConditionsCharacteristicSymbolMinTyp.MaxUnitSupplyvoltageVCC―548VForwardcurrentIF―1620mACollectorcurrentIC―110mANote:Recommendedoperatingconditionsaregivenasadesignguidelinetoobtainexpectedperformanceofthedevice.Additionally,eachitemisanindependentguidelinerespectively.Indevelopingdesignsusingthisproduct,pleaseconfirmspecifiedcharacteristicsshowninthisdocument.TLP1812009-11-124IndividualElectricalCharacteristics(Ta=25°C)CharacteristicSymbolTestConditionMinTyp.MaxUnitForwardvoltageVFIF=10mA1.01.151.3VReversecurrentIRVR=5V——10μALEDCapacitanceCTV=0,f=1MHz—30—pFCollector−emitterbreakdownvoltageV(BR)CEOIC=0.5mA80——VEmitter−collectorbreakdownvoltageV(BR)ECOIE=0.1mA7——VVCE=48V,(Ambientlightbelow1000lx)—0.01(2)0.1(10)μACollectordarkcurrentICEOVCE=48V,Ta=85°C,(Ambientlightbelow1000lx)—2(4)50(50)μADetectorCapacitance(collectortoemitter)CCEV=0,f=1MHz—10—pFCoupledElectricalCharacteristics(Ta=25°C)CharacteristicSymbolTestConditionMInTyp.MaxUnit50—600CurrenttransferratioIC/IFIF=5mA,VCE=5VRankGB100—600%—60—SaturatedCTRIC/IF(sat)IF=1mA,VCE=0.4VRankGB30——%IC=2.4mA,IF=8mA——0.4—0.2—Collector−emittersaturationvoltageVCE(sat)IC=0.2mA,IF=1mARankGB——0.4VOff−statecollectorcurrentIC(off)VF=0.7V,VCE=48V—110μAIsolationCharacteristics(Ta=25°C)CharacteristicSymbolTestConditionMinTyp.MaxUnitCapacitance(inputtooutput)CSVS=0V,f=1MHz—0.8—pFIsolationresistanceRSVS=500V,R.H.≤60%1×10121014—ΩAC,1minute3750——AC,1second,inoil—10000—VrmsIsolationvoltageBVSDC,1minute,inoil—10000—VdcTLP1812009-11-125SwitchingCharacteristics(Ta=25°C)CharacteristicSymbolTestConditionMinTyp.MaxUnitRisetimetr—2—Falltimetf—3—Turn−ontimeton—3—Turn−offtimetoffVCC=10V,IC=2mARL=100Ω—3—μsTurn−ontimetON—2—Storagetimets—25—Turn−offtimetOFFRL=1.9kΩ(Fig.1)VCC=5V,IF=16mA—40—μsFig.1SwitchingtimetestcircuittOFFtONVCEIFtS4.5V0.5VIFVCCRLVCETLP1812009-11-126PC–Ta200−2002040608010012016012080400AllowablecollectorpowerdissipationPC(mW)AmbienttemperatureTa(°C)IFP–DRDutycycleratioDRPulseforwardcurrentIFP(mA)3000103Pulsewidth≤100μsTa=25°C10−3310−2310−1310030501003001000500ΔVF/ΔTa–IFForwardcurrentIF(mA)ForwardvoltagetemperaturecoefficientΔVF/ΔTa(mV/°C)−3.2−0.40.1−2.8−2.4−2.0−1.6−1.2−0.80.30.5135103050IFP–VFPPulseforwardvoltageVFP(