85MeVF离子辐照InP正电子湮没研究

:1999208219;:1999211212:(19835050);(97J111218HZ010):(1963),,,,,343Vol.34,No.320005AtomicEnergyScienceandTechnologyMay200085MeV19FInP,,,(,102413):1161016cm-285MeV19FInPInP:InP;19F;;:O472:A:100026931(2000)03202592032InP,,InP[1],,,,InP,InP,2InP[2][3,4],InP,1021cm-2,,,105107[5],,1161016cm-285MeV19FPInP115mm0.45mm(3151017cm-3)PInP,(110)HI213,19F85MeV,130nA,1161016cm-2TRIM95©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[6],210ps714105Bq22Na106LT510[7],,11221PInP:1=235.5ps,InP[8],InP1PInPTable1Positronannihilationlifetimeparametersinun2andas2irradiatedP2typeInP/cm-21/psI1/%2/psa/ps2/b235151001161016178153415274182411611167,1=178.5ps2=27418ps2,b2/b=1.1671120,[9],85MeV19FPInP1,1=17815ps,[10]:1/1=1/b+K(K),,1,b,1,K,11a(a=I11+I22,I1+I2=1)=241.6ps,:[1]YamaguchiM,AndoK.MechanismforRadiationResistanceofInPSolarCells[J].JApplPhys,1988,63:555555621[2]MahonyJ,MascherP,PuffW.OntheContributionofVacancyComplexestotheSaturationoftheCarrierConcentrationinZincDopedInP[J].JApplPhys,1996,80:271227191[3]SummersGP,BurkeEA,ShapiroP,etal.DamageCorrelationsinSemiconductorsexposedtoGamma,Elec2tronandProtonRadiations[J].IEEETransNuclSci,1993,40:13721379.[4]XapsosMA,SummersGP,BlatchleyCC,etal.GammaRayandElectronDisplacementDamageStudiesofSemiconductors[J].IEEETransNuclSci,1994,41:19451949.[5]1CIAENAL[J]1,1994,11(2):39411[6]ZhuShengyun,LiAnli,BaiXixiang,etal.StudyofSuperconductingMaterialYBaCuObyPositronAnnihi2lationTechnique[J].ChinPhysLett,1988,5(2):5356106234©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[7]KansyJ.MicrocomputerProgramforAnalysisofPositronAnnihilationLifetimeSpectra[J].NuclInstrumMethods,1996,A374:2352441[8]BretagnonT,DannefaerS,KerrD.IndiumVacancyinAs2grownInP:APositronAnnihilationStudy[J].JApplPhys,1993,73:469746991[9]DlubekG,BrummerO,PlazaolaF,etal.PositronStudyofNativeVacanciesinDopedandUndopedGaAs[J].JPhys,1986,C19:3313441[10]ZhuShengyun,LiAnli,LuoQi,etal.PositronAnnihilationStudyofDefectsinGaAsIrradiatedbyFissionNeutron[J].NuclSciTech,1997,8:3032.PositronAnnihilationStudyonRadiationEffectinInPIrradiatedby85MeV19FIonWANGRong,XUYong2jun,HUANGLong,ZHUSheng2yun(ChinaInstituteofAtomicEnergy,P.O.Box275250,Beijing102413,China)Abstract:Theradiationeffectinducedby85MeV19Fionirradiationof1.61016cm-2inP2typeInPisinvestigatedbypositronannihilationlifetimetechnique.Monovacanciesaredetectedinirra2diatedP2typeInP.Keywords:InP;19Fions;radiationeffect;positronannihilationNuclearPower,EnergyandtheEnvironment:PeterE.Hodgson1999ImperialCollegy,?,,,,:1623:85MeV19FInP©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.