MMBT2222_数据手册

LESHANRADIOCOMPANY,LTD.O4–1/5GeneralPurposeTransistorsNPNSiliconMAXIMUMRATINGSRatingSymbol22222222AUnitCollector–EmitterVoltageVCEO3040VdcCollector–BaseVoltageVCBO6075VdcEmitter–BaseVoltageVEBO5.06.0VdcCollectorCurrent—ContinuousIC600600mAdcTHERMALCHARACTERISTICSCharacteristicSymbolMaxUnitTotalDeviceDissipationFR–5Board,(1)PD225mWTA=25°CDerateabove25°C1.8mW/°CThermalResistance,JunctiontoAmbientRθJA556°C/WTotalDeviceDissipationPD300mWAluminaSubstrate,(2)TA=25°CDerateabove25°C2.4mW/°CThermalResistance,JunctiontoAmbientRθJA417°C/WJunctionandStorageTemperatureTJ,Tstg–55to+150°CDEVICEMARKINGMMBT2222LT1=M1B;MMBT2222ALT1=1P;ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisenoted.)CharacteristicSymbolMinMaxUnitOFFCHARACTERISTICSCollector–EmitterBreakdownVoltageMMBT2222V(BR)CEO30—Vdc(IC=10mAdc,IB=0)MMBT2222A40––Collector–BaseBreakdownVoltageMMBT2222V(BR)CBO60—Vdc(IC=10µAdc,IE=0)MMBT2222A75Emitter–BaseBreakdownVoltageMMBT2222V(BR)EBO5.0—Vdc(IE=10µAdc,IC=0)MMBT2222A6.0––CollectorCutoffCurrentMMBT2222AICEX—10nAdc(VCE=60Vdc,IEB(off)=3.0Vdc)CollectorCutoffCurrentICBOµAdc(VCB=50Vdc,IE=0)MMBT2222––0.01(VCB=60Vdc,IE=0)MMBT2222A––0.01(VCB=50Vdc,IE=0,TA=125°C)MMBT2222––10(VCB=60Vdc,IE=0,TA=125°C)MMBT2222A––10EmitterCutoffCurrent(VEB=3.0Vdc,IC=0)MMBT2222AIEBO—100nAdcBaseCutoffCurrent(VCE=60Vdc,VEB(off)=3.0Vdc)MMBT2222AIBL—20nAdc1.FR–5=1.0x0.75x0.062in.2.Alumina=0.4x0.3x0.024in.99.5%alumina.132MMBT2222LT1MMBT2222ALT1CASE318–08,STYLE6SOT–23(TO–236AB)2EMITTER3COLLECTOR1BASELESHANRADIOCOMPANY,LTD.O4–2/5MMBT2222LT1MMBT2222ALT1ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisenoted)(Continued)CharacteristicSymbolMinMaxUnitONCHARACTERISTICSDCCurrentGainhFE––(IC=0.1mAdc,VCE=10Vdc)35––(IC=1.0mAdc,VCE=10Vdc)50––(IC=10mAdc,VCE=10Vdc)75—(IC=10mAdc,VCE=10Vdc,TA=–55°C)MMBT2222Aonly35—(IC=150mAdc,VCE=10Vdc)(3)100300(IC=150mAdc,VCE=1.0Vdc)(3)50––(IC=500mAdc,VCE=10Vdc)(3)MMBT222230––MMBT2222A40—Collector–EmitterSaturationVoltage(3)VCE(sat)Vdc(IC=150mAdc,IB=15mAdc)MMBT2222––0.4MMBT2222A––0.3(IC=500mAdc,IB=50mAdc)MMBT2222––1.6MMBT2222A––1.0Base–EmitterSaturationVoltageVBE(sat)Vdc(IC=150mAdc,IB=15mAdc)MMBT2222––1.3MMBT2222A0.61.2(IC=500mAdc,IB=50mAdc)MMBT2222––2.6MMBT2222A––2.0SMALL–SIGNALCHARACTERISTICSCurrent–Gain—BandwidthProduct(4)MMBT2222fT250––MHz(IC=20mAdc,VCE=20Vdc,f=100MHz)MMBT2222A300––OutputCapacitance(VCB=10Vdc,IE=0,f=1.0MHz)Cobo––8.0pFInputCapacitanceMMBT2222Cibo––30pF(VEB=0.5Vdc,IC=0,f=1.0MHz)MMBT2222A––25InputImpedance(VCE=10Vdc,IC=1.0mAdc,f=1.0kHz)MMBT2222Ahie2.08.0kΩ(VCE=10Vdc,IC=10mAdc,f=1.0kHz)MMBT2222A0.251.25VoltageFeedbackRatio(VCE=10Vdc,IC=1.0mAdc,f=1.0kHz)MMBT2222Ahre–-8.0X10–4(VCE=10Vdc,IC=10mAdc,f=1.0kHz)MMBT2222A—4.0Small–SignalCurrentGain(VCE=10Vdc,IC=1.0mAdc,f=1.0kHz)MMBT2222Ahfe50300—(VCE=10Vdc,IC=10mAdc,f=1.0kHz)MMBT2222A75375OutputAdmittance(VCE=10Vdc,IC=1.0mAdc,f=1.0kHz)MMBT2222Ahoe5.035µmhos(VCE=10Vdc,IC=10mAdc,f=1.0kHz)MMBT2222A25200CurrenBaseTimeComstant(VCB=20Vdc,IE=20mAdc,f=31.8MHz)MMBT2222Arb,CC––150psNoiseFigure(VCE=10Vdc,IC=100µAdc,RS=1.0kΩ,f=1.0kHz)MMBT2222ANF––4.0dBSWITCHINGCHARACTERISTICSDelayTime(VCC=30Vdc,VEB(off)=–0.5Vdctd—10RiseTimeIC=150mAdc,IB1=15mAdc)tr—25nsStorageTime(VCC=30Vdc,IC=150mAdcts—225nsFallTimeIB1=IB2=15mAdc)tf—603.PulseTest:PulseWidth300µs,DutyCycle2.0%.4.fTisdefinedasthefrequencyatwhichhfeextrapolatestounity.LESHANRADIOCOMPANY,LTD.O4–3/5MMBT2222LT1MMBT2222ALT1Figure1.Turn–OnTimeScoperisetime4.0ns*Totalshuntcapacitanceoftestjig,connectors,andoscilloscope.1.0k+30V200CS*10pF1.0k+30V200CS*10pF1N914+16V–14V20ns2.0ns–2.0V+16VFigure2.Turn–OffTime1.0to100µs,DUTYCYCLE~2%SWITCHINGTIMEEQUIVALENTTESTCIRCUITS001.0to100µs,DUTYCYCLE~2%–4.0VIC,COLLECTORCURRENT(mA)Figure3.DCCurrentGainIB,BASECURRENT(mA)Figure4.CollectorSaturationRegionhFE,DCCURRENTGAINVCE,COLLECTOR–EMITTERVOLTAGE(VOLTS)0.10.20.30.50.71.02.03.05.07.01020305070100203005007001.0k100070050030020010070503020100.0050.010.020.030.050.10.20.30.51.02.03.05.0102030501.00.80.60.40.20VCE=10VVCE=1.0VTJ=+125°C+25°C–55°CTJ=25°C500mA100mA10mAIC=1.0mA~~LESHANRADIOCOMPANY,LTD.O4–4/5MMBT2222LT1MMBT2222ALT1t,TIME(ns)t,RISETIME(ns)VCC=30VIC/IB=10IB1=IB2TJ=25°Ctr@VCC=30Vtd@VEB(off)=2.0Vtd@VEB(off)=0IC/IB=10TJ=25°C5.07.0102030507010020030050020010070503020107.05.03.02.010070503020107.05.0t’s=ts–1/8tftfIC,COLLECTORCURRENT(mA)Figure6.Turn-OffTimeIC,COLLECTORCURRENT(mA)Figure5.Turn–OnTimeNF,NOISEFIGURE(dB)RS,SOURCERESISTANCE(kΩ)Figure8.SourceResistanceEffectsNF,NOISEFIGURE(dB)f=1.0kHz0.010.020.050.10.20.51.02.05.01020501001086420501002005001.0k2.0k5.0k10k20k50k100kf,FREQUENCY(kHz)Figure7.FrequencyEffectsIC=50µA100µA500µA1.0mAIC=1.0mA,RS=150ΩIC=500µA,RS=200ΩIC=100µA,RS=2.0kΩIC=50µA,RS=4.0kΩRS=OPTIMUMRS=SOURCERS=RESISTANCE1086420IC,COLLECTORCURRENT(mA)Figure10.Current–GainBandwidthProductREVERSEVOLTAGE(VOLTS)Figure9.CapacitanceVCE=20VTJ=25°CCebCcb1.02.03.05.07.0210203050701000.10.20.30.51.02.03.05.0102030503020107.05.03.02.05003002001007050fT,CURRENT–GAINBANDWIDTHPRODUCT(MHz)CAPACITANCE(pF)5.07.01020305070100200300500LESHANRADIOCOMPANY,LTD.O4–5/5MMBT2222LT1M