硅光子学-From光互连to光计算-2

1硅光子学：From光互连to光计算杨林中国科学院半导体研究所集成光电子学国家重点实验室2硅基光子器件：导波、滤波、调制与开关用于光互连的硅基光子器件及集成用于光学矩阵运算的硅基光子器件及集成用于光学逻辑运算的硅基光子器件及集成报告提纲3硅材料的光学特性1.01.52.02.53.03.54.04.55.03.423.443.463.483.503.523.54RealpartoftherefractiveindexWavelength(祄)RefractiveIndexofSiliconPolyFitwiththeOrderof51.001.021.041.061.081.101.121.141.160501001502002501.01.52.02.53.03.54.04.55.05.5-0.20.00.20.40.60.8Attenuationcoefficient(dB/cm)Wavelength(祄)0.1dB/cm4硅材料的调制特性57102-19.45103.47101.4910(K)dnTTdT热光效应：材料的折射率随温度的变化而变化。在300～600K，硅在1.55m的热光系数随温度变化的经验公式：mNNmNmNncqmNNmNmNncqnhehchheceehechhcee55.1100.6105.8455.1105.8108.8818182*2*0032238.01822**002222等离子体色散效应：材料的折射率和吸收系数随载流子浓度的变化而变化。50222''0121212002cos22MMMeffeffLLLLIEEkNLkeeeeNEEEEL1.5251.5351.5451.5551.565-60-45-30-150Wavelength(m)Insertionloss(dB)0phaseshiftphaseshift1.51.511.521.531.541.551.561.571.581.591.6-25-20-15-10-50Wavelength(m)Insertionloss(dB)0phaseshiftphaseshift工作波长工作波长静态光谱（臂长差为200m）静态光谱（臂长差为0m）Mach-Zehnder干涉器6Microring谐振器0波长强度1.5351.5401.5451.5501.5550.00.20.40.60.81.03dBbandwidthFSRNormalizedamplitudeWavelength(m)DropThrough7Input1Drop12effmNRThrough2,3,…,nAddInput2,3,…,n2effmNRAdd交叉微环谐振器Input2,3,…,nThrough2,3,…,n2effmNRDrop1Input12effmNRAddAdd平行微环谐振器1.5351.5401.5451.5501.5550.00.20.40.60.81.03dBbandwidthFSRNormalizedamplitudeWavelength(m)DropThroughMicroring谐振器8~0.1nm1~100nmOpticalbandwidth~103m2(Carrier-injection)HighHigh~10fJ/bit~102m2MicroringModulatorLowSensitivitytofabricationimperfectionLowSensitivitytotemperaturePerformanceMach-ZehnderModulatorFootprint~104m2(Carrier-depletion)Powerconsumption~103fJ/bit调制器的光学结构Mach-ZehnderMicroring9光开关的光学结构MRRI1I2O2O1M-ZI1I2O2O1SpecificationsMZMRFootprint~104m2~102m2Powerconsumption~103fJ/bit(Modulator)~10fj/bit(Modulator)Bandwidth1~100nm~1nmLimitationsforapplicationFootprintandpowerconsumptionBandwidth(utilizingperiodicspectralproperty)Mach-ZehnderorMicroring?10PINReverse-biasedPNMOScapacitorModulationefficiencyHigh(0.0024V·cm)Low(1.28V·cm)Medium(0.5V·cm)Modulationspeed1Gb/s/12.5Gb/s50Gb/s12.5Gb/sFabricationprocessLowMediumHigh调制结构：PIN,PNorMOS？Forward-biasedPINReverse-biasedPNMOScapacitor11硅基光子器件：导波、滤波、调制与开关用于光互连的硅基光子器件及集成用于光学矩阵运算的硅基光子器件及集成用于光学逻辑运算的硅基光子器件及集成报告提纲12IBM公司高性能计算机发展路线图美国DARPA启动多个研究计划（“C2OI”和“UNIC”），国际计算机巨头Intel、IBM、Google、Oracle等均投巨资开展CPU间光互连的研究。13光互连、电交换光互连电交换：光信号通过光/电转换变为电信号，由电控制网络进行路径选择，然后通过电/光转换变为光信号发送到接收端，延迟大，功耗高。14光互连、光交换光互连、光交换光互连光交换：采用光电并行网络结构，电控制网络进行路径选择，光信号无需进行光/电、电/光转换，直接到达接收端，延迟小，功耗低。15高性能计算机中的光互连技术～0.01美元1mW/Gbps(1pJ/bit)1Tbps100K0.2cm片上光互连～0.1美元10mW/Gbps(10pJ/bit)1Tbps100K1cm片间光互连～1美元10mW/Gbps10Gbps10K50cm板间光互连～10美元50mW/Gbps10Gbps5～10K100m机柜间光互连成本/Gbps功耗/链路带宽/链路链路数量长度16光互连对光器件的要求机柜间、板间光互连：III-V技术主导、硅技术渗透；片间光互连：Polymer或硅？片上光互连：硅技术是唯一选择！功耗来源：激光器、调制器、路由器、探测器；40Gbps调制器的功耗：500fJ/bit(2Vpp),31fJ/bit(0.5Vpp)。17First~1Gb/sSiM-ZopticalmodulatorA.Liu,Nature427(2004)615-618.(Intel)1Gb/sAsymmetricM-Zinterferometer18Q.Xu,Nature435(2005)325-327.(Cornell)0.4Gb/sFirst~1Gb/sSimicroringopticalmodulator?19L.Liao,Electro.Lett.,43(2007)22.(Intel)Modulationspeed:40Gb/s;Phaseshifter:1mm;V·L:4V.cm;Drivingvoltage:6V;DynamicER:1.1dB;Powerconsumption:18pJ/bit.First40Gb/sSiopticalmodulator?2050Gb/sSiliconopticalmodulatorWorkingpoint:3.2dBquadrature;Modulationspeed:50Gb/s;Phaseshifter:1mm;V·L:2.8V.cm;Drivingvoltage:6.5V;DynamicER:2.2dB;Powerconsumption:4.2pJ/bit.D.J.Thomson,IEEEPTL,24(2012)234.(SurreyUniv.)2150Gb/sSiliconopticalmodulatorWorkingpoint:aroundminimumtransmissionpoint;Modulationspeed:50Gb/s;Phaseshifter:2mm;V·L:2.4V.cm;Drivingvoltage:4.5V;DynamicER:4.7dB;Powerconsumption:2pJ/bit.P.Dong,OpticsExpress,20(2012)6163.(Alcatel-Lucent)2240Gb/sSiopticalmodulatorV·L:1.28V.cm;StaticER:28dB;Reverse-biasedPNdiodeAsymmeticMach-ZehnderL=80m2340Gb/sSiopticalmodulator0.00.20.40.60.81.01.21.41.61.82.03222456590130180StandardvoltageinCMP(V)Fabricationtechnologynode(nm)250J.J.Ding,GFP(2012)ThP23.(ISCAS)Workingpoint:3dBquadrature;Modulationspeed:40Gb/s;Phaseshifter:2mm;V·L:1.28V.cm;Drivingvoltage:0.36V;DynamicER:4.7dB;Powerconsumption:32fJ/bit.canbedrivenbyCMOScircuitdirectly,whichfurtherreduceitspowerconsumption.2440Gb/sSiopticalmodulatorJ.J.Ding,GFP(2012)ThP23.(ISCAS)Workingpoint:quadrature;Modulationspeed:40Gb/s;Phaseshifter:2mm;V·L:1.28V.cm;Drivingvoltage:6V;DynamicER:15dB.25StatusofthesiliconM-ZopticalmodulatorsOE,20(2012)105916.14.776.640Univ.Paris-SudOE20(2012)6163224.54.750Alcatel-LucentOE20(2012)70810.14620.5926OE18(2010)799414.4167.312.5KoturaPTL24(2012)2344.216.52.250SurreyGroupModulationspeed(Gbit/s)Extinctionratio(dB)Drivingvoltage(V)Length(mm)Powerconsumption(pJ/bit)ReferenceIntel401.16118EL,43(2007)22IBM10~7.60.25OE15(2007)17106Fujikura12.595410OE19(2011)B26ETRI307.21.21-OE19(2011)26936IME108.745412.5OE19(2011)18029ISCAS404.70.3620.032GFP(2012)ThP23UntilOct.201226Simodulatorwithhighopticalbandwidth1530154015501560403020101.60