MEMS器件真空封装工艺研究

EquipmentforElectronicProductsManufacturingEPE182Nov．2010MEMS(，030024)：MEMS，。，，。，MEMS，。MEMS，，MEMS。：MEMS；；；：TN405：A：1004-4507(2010)10-0005-03VacuumPackagingTechnologiesResearchofMEMSDevicesYANGKaijun,WANGXuejun,JINGWenli,ZHANGJianhong,WANGNing(TheSecondResearchInstituteofCETC,Taiyuan030024,China)Abstract:VacuumpackagingtechnologiesofMEMSdevicesarethedifficultyinthewholepackagingprocessandthepackagingqualitydeterminesthequalityandservicelifeofthewholedevices.Fortheexistingpackagingtechnology,vacuumdegreeinsidedevicecan’tbekepteffectivelyafterpackaging,whichisthebottleneckthatneedstoworkinthevacuum.Withthegetterisusedwidely,vacuummaintainingabilityofMEMSisalsoimprovedgreatly,buttheexistingpackagingequipmentcan’tmeetactivatedconditionofthegetter.Inthispaper,Authoranalyzedairdamping’sinfluenceonMEMSqualityfactor,andproposedanimprovementmethodforexistingvacuumbrazingequipment,whichcanbeappliedtovacuumpackagingtechnologyofMEMSofusingthegetter.Keywords:MEMSdevice;vacuumpackaging;getter;qualityfactor：2010-09-16MEMS、、、、、、。MEMSMEMSMEMS70％～80％MEMS。··5EquipmentforElectronicProductsManufacturingEPE182Nov．2010MEMSMEMS。MEMSMEMSMEMS,,。MEMSMEMS。1MEMSMEMSMEMSMEMSMEMSMEMS150～20010。10(Kn＞10)。f0=nm2πκT3/2expm2πκT(u'2+υ'2+ω'2(1)nk(k=1.38×10-23J/K)mTμ'、υ'、ω'x、y、z3。UU。σ(1-σ)r=σ2-σρURgT2π姨(2)Rgρ=mn。。bM=σ2-σρARgT2π姨(3)(3)。Pa=ρ0mωrQr2-σσ2π姨ρ0ARgT姨(4)ρ0、P0P0。σ=0.81.4×10512Pa。MEMS10。,。。MEMSMEMS、。2MEMS2.1MEMSMEMS。MEMS。、MEMS。2.2,、。MENS(1)。MEMS··6EquipmentforElectronicProductsManufacturingEPE182Nov．2010。。(2)。。。(3)。。。、、。(Au/Sn)。。MEMS。3MEMS/,MEMS,(1)MEMS。MEMS.MEMSMEMS。(2)。、()()。MEMS。,,。。1。MEMS2。。3a。3b。。(4a)、1MEMS2MEMS(25)··7EquipmentforElectronicProductsManufacturingEPE182Nov．20103(a)(b)。。(4b)。。。4MEMSMEMS。MEMS。MEMS。：[1].MEMS[J].2005243:7-12.[2].MEMS[J].20051047-10.[3].MEMS[J].20091781987-1992.：1982-。4(a)(b)：：：：：：：：：：：：：：：：：：：：：：Thus,takingintoaccountmodernrequirementsoftechnologicalequipmentlevel,thisMBEcomplexwasspeciallydesignedtosolveadvancedproblemsofmodernnanophotonicsandnanoelectronics.References:[1]E.Kato,H.Noguchi,M.Nagai,H.Okuyama,S.Kijima,A.Ishibashi,Electron.Lett.34,282(1998)[Z].[2]S.V.Ivanov,ZnSe-basedlasersandlaserdiodeconvert-ers,16thInt.Conf.onMBE(MBE2010),22-27August,Berlin(2010)(invitedpaper)[Z].[3]S.V.Ivanov,S.V.Sorokin,P.S.Kop'ev,J.R.Kim,H.D.JungandH.S.Park,J.CrystalGrowth159,16(1996)[Z].Fig.2PhotoluminescencespectrumofteststructuresonGaAsbufferlayerwithquantumdotsCdSe/ZnSe.STE3526complex'sresult(blueline),MBEsystemofpreviousgenerationresult(redline).Testheterostructure'sscheme.1×1069×1058×1057×1056×1055×1054×1053×1052×1051×1050×105PLintensity,a.u.QDsCdse/ZnSeHe-CdlaserT=77K2.463eVFWHM=51mev2.42eV512nmFWHM=47mev2.02.22.42.62.83.03.23.43.6Energy,eVZnSe-100ACdSeQD-2.5MLZnSe-600AGaAs：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：(7)·IC·25