刘正新-高效率HIT关键技术及发展趋势

中科院上海微系统与信息技术研究所高效率HIT太阳电池关键技术及发展趋势刘正新中国科学院上海微系统与信息技术研究所新能源技术中心Email:[e-mail]1.高效率HIT电池的发展趋势2.SIMIT-Trina的HIT研发进展3.HIT的技术关键4.HIT电池的发电量测试5.总结从IEEEPVSC2014看晶体硅太阳电池的发展趋势Pansonic:IBC-HIT25.6%Sharp:IBC25.2%Sunpower:IBC25.0%TrinaSolar:IBC24.4%提高转换效率是晶体硅太阳电池发展的关键技术！1.高效率HIT电池的发展趋势ProgressofHITatPansonic/Sanyo(1)ProgressofHITatPansonic/Sanyo(2)ProgressofHITatPansonic/Sanyo(3)World-wideHITR&DtrendsCountryOrganizationArea(cm2)Voc(mV)Jsc(mA/cm2)FFEff(%)SourceJapanPansonic101.875039.50.83224.72013newreleaseKaneka23.52012PVSEC-22Choshu(CIC)243/CZ68536.90.79220.02011PVSEC-21EuropeEPFL/Switzerland3.98/FZ/n72738.90.78422.142013IEEEJ.PVEPFL/Switzerland3.98/FZ/p72238.40.77121.382013IEEEJ.PVRRS/Switzerland4/CZ73538.50.77521.92011Euro-PVSEC-26INES/France105/FZ73236.90.78321.02011Euro-PVSEC-26HZB/Germany163939.30.78919.82007JournalUnivHagen/GermanyFZ675370.77319.32009PhDthesisFhG-ISE/Germany4/FZ705350.7518.72010IEEEPVSC-35USANREL0.9/FZ67836.20.78619.32010APL-96IEC0.55/CZ69435.70.74218.32008APL-92CountryOrganizationArea(cm2)Voc(mV)Jsc(mA/cm2)FFEff(%)SourceKoreaHHI(Hyundai)22072136.60.79921.12011Euro-PVSEC-26LG1/FZ68733.30.78918.22010IEEEPVSC-35ChinaSilevo/赛昂22.12012Sunpreme/上澎238/CZ21.42014SIMIT/Trina156/CZ71137.80.77621.42014NTUST/台湾科技大1/FZ69039.10.72719.62011World-wideR&Dtrends-ContinuedWorld-wideR&Dtrends-IBC-HJsolarcellsCountryOrganizationArea(cm2)Voc(mV)Jsc(mA/cm2)FFEff(%)SourceJapanPansonic143.774041.882.725.6IEEEPVSC2014KoreaLG4/FZ72341.80.77423.42011PVSEC-21GermanyHZB1/FZ67339.70.75720.22011FranceINES25/FZ67832.40.71615.72010USAIECFZ67034.20.65215.02010ItalyENEAFZ(p)687320.5011.02007CanadaUniv.Toronto1/FZ536200.7558.12009LGElectronicsAdvancedResearchInstitutesIBC-HITsolarcellProgressofIBC-HITatPansonicVoc0.740VIsc6.01AJsc41.8mA/㎝²FF0.827Eff25.6％Area143.7㎝²HITproduction(MW)CountryCompanyCapacity产能Production/产量2013CommentJapanPansonic(inJapan)600600Pansonic(inMalesia)300300Choshu(长洲产业)6030ChinaGuodian(国电，宜兴)805NotconfirmedSilevo(赛昂，杭州)3030Sunpreme(上澎太阳能)4040Difficulties:1.Technologies:efficiency,repeatabilityandyield;2.Cost:initialinvestmentandthecostofperwatt;3.Equipments:noturn-keyequipmentsupply;实验室场景中科院上海微系统所SIMIT-常州天合Trina2.联合实验室HIT电池研发进展CertificatedEffof125x125mmcell--by2013Voc=722mVJsc=36.9mA/cm2FF=75.7%Eff=20.13%SIMIT-TrinaHIT电池研发进展（1）CellArea:154cm2SampleNo.:140611.8.1Isc5.65AVoc0.727VPmax3.30WFF80.%Eff21.45%Temp25degCIrr0.999888SunRef.DeviceNo.AK-2002000042Cal.Ref.Average1.531229ScanModeIsctoVocSIMIT-TrinaHIT电池研发进展（2）In-housemeasuredEffof125x125mmcell--by2014608010012014016018019.019.520.020.521.0Eff(%)Waferthickness(µm)6080100120140160180707274767880FF(%)Waferthickness(um)6080100120140160180700710720730740750Voc(mV)Waferthickness(um)608010012014016018034.034.535.035.536.036.537.0Jsc(mA/cm2)Waferthickness(um)硅片变薄SIMIT-TrinaHIT电池研发进展（3）薄型化Highefficiencyandflexible!!!3.HIT电池关键技术♦a-Si膜的高品质化♦降低a-Si薄膜中等离子体引起的损伤1.a-Si:H/c-Si界面的高品质化♦降低a-Si和TCO薄膜的光吸收♦降低栅电极电阻和接触电阻2.光吸收损失的降低3.电阻损失的降低010203040506070300400500600700800900100011001200reflectivity(%)wavelength(nm)（1）表面结构对反射率的影响绒面尺寸大小对表面反射率没有直接影响ilayer20nmc-Siilayer20nmilayer20nmc-Siilayer20nmChemicalOxideRCA1RCA2NoOxidationDIWHCl0.01.02.03.04.0AsdepositedAnnealedEffectiveCarrierLifetime(ms)TreatmentsSeff(cm/s)26.313.18.86.62ms2.45ms2.53msPretreatmentsVoc(mV)Jsc(mA/cm2)FFEff(%)Ref.W/OSiOx708.636.700.74419.35DIWater709.337.150.73619.38HCl(1:10)712.137.230.72219.15（2）表面处理对电池性能的影响J.Bian,etal,Appl.Phys.Express7(2014)065504Widerbandgapa-SiO:HJscSource:EPFL/IMT（3）表面窗口层对电池性能的影响3004005006007008009001000110012000102030405060PolishedsiTexturedsiPost-treatedsiTCOonsiReflectance%Wavelengthnm0204060801001201400102030405060708090100Hallmobility[cm2/Vs]Oxygenflowrate[sccm]as-depo.PA2TCOfilm(70-100nm)–Tran.91.7%，–Resistivity1.6x10-4Ω·cm，–Hallmobility79.9cm-3/Vs。–Hallmobility120cm-3/Vs(PAtreatment)（4）TCO对Jsc、FF的影响→TCOiscriticaltoJscandFFF.Meng,etal,Sol.EnegyMater.Sol.Cells122(2014)70-744.HIT电池的发电量比较SIMIT-20kW屋顶光伏试验电站（上海，嘉定）普通多晶HIT7227237258118128138158168188198228238258268279019029039049059069109129149209219229239301001AVE0200400600800100012001400E(Wh)DateHITmc-Si（1）HIT与多晶硅组件每日发电量比较HIT和多晶硅组件的总发电量分别为19438.89Wh与18112.39Wh，平均发电量分别为647.96和603.75Wh，HIT高于多晶硅7.32%。日发电量大于400Wh时，HIT的发电量均高于多晶硅，日发电量低于400Wh时，HIT和多晶硅发电量基本相当，但是，在阴雨天，多晶硅有时略高于HIT。7227237258118128138158168188198228238258268279019029039049059069109129149209219229239301001AVE0123456E(Wh)/P(W)DateHITmc-Si（2）HIT与多晶硅组件发电时长比较HIT和多晶硅组件的有效发电时长分别为84.9h与76.4h，日平均有效发电时长分别为2.83和2.55h，HIT组件的发电时长（性能比）高于多晶硅组件11.07%。04:0006:0008:0010:0012:0014:0016:0018:0020:00020406080100120140160180PmpptTimeHITmc-Si04:0006:0008:0010:0012:0014:0016:0018:0020:00020406080100120140160180200220PmpptTimeHITmc-Si7月22日：晴天7月23日：晴天有云当天气状况为晴天时，HIT每日8:00-16:00主要时段的发电量明显好于多晶硅。HIT表现最佳时一日发电量高于多晶硅组件15.8%，发电时长高于多晶硅组件19.9%。（3）HIT与多晶硅组件晴天的发电量比较04:0006:0008:0010:0012:0014:0016:0018:0020:0001020304050607080PmpptTimeHITmc-Si04:0006:0008:0010:0012:0014:0016:0018:0020:00010203040PmpptTimeHITmc-Si8月18日：阴天9月22日：阴天在典型的阴天，HIT组件与普通多晶硅组件的发电量持平，甚至有时略低于多晶硅组件。（4）HIT与多晶硅组件阴天的发电量比