掺硼金刚石薄膜电极用于污水处理研究进展

2010-08-26.2008CDB255Q20081505。1985-、。112211.4300732.430056BDD。、。BDDX703A1006-7086201004-0238-09DOI:10.3969/j.issn.1006-7086.2010.04.011SURVEYOFPROCESSWITHBDDELECTRODEFORWASTEWATERTREATMENTCHENPeng1MANWei-dong1WUYu-qiong2CHENGao-feng2DONGWei11.ProvincialKeyLaboratoryofPlasmaChemistryandAdvancedMaterialsWuhanInstituteofTechnologyWuhan430073China2.SchoolofChemistry&EnvironmentalEngineeringJianghanUniversity;Wuhan430056;ChinaAbstract:BDDisanewelectrodematerialthathasreceivedgreatattentionrecently.becauseitpossessesseveraltechnologicallyimportantcharacteristicssuchasaninertsurfacewithlowadsorptionpropertiesremarkablecorrosionstabilityeveninstrongacidicmediaandanextremelywidepotentialwindowinaqueousandnon-aqueouselectrolytes.Comparingwithotherelectrodematerialsitpossessesthebetterphysicalandchemicalproperties.Owingtothesepropertiesdiamondelectrodesmeettherequirementsforawiderangeofelectrochemicalunderlyingapplications.Theobjectofthisarticleistosummariseanddiscusstherecentresultsavailableintheliteratureconcerningtheapplicationofdiamondelectrodestoelectrochemicalprocessessuchaswastewatertreatment.Keywords:BDDthinfilmelectrodewastewatertreatmentelectrochemical1。、。GDP3、5Vacuum＆Cryogenics164201012238。、、、、、、、、、、。。。。。。、、、、、。、。、、。、、。“”。“”。[1]。[2]Pt、Au[3]。。。。;[45]。。BDD。BDD。。2BDDhotfilemantchemicalvapordepositionHFCVDmicrowaveplasmachemicalvapordepositionMPCVD、、[6~8]。。。、。[9]5kWMPCVD10h0.0508m2inch。、、。。BCH33、。B2O3。[10]／B2O3/。BDD。239164BDDBDD12。1/[11]HFCVD220mm[12]MPCVD[11]3BDD[13]1-1.25VH+2.3VH3V。2。/BDD。3-1000+1000mVSCE50μA/cm2。4BDDBDD[1415]。。、BDDBDD[16]BDDnaphthalenesulfonates[17][18]hexadecyltrimethylammoniumchloride[19]T[2021]BDDCODChemicalOxygenDemand95%。4.1[2223]IrO2/Ta2O5、SnO2PbO2IrO2/Ta2O5、SnO2PbO2。COD、SnO2PbO2。IrO2/Ta2O5、SnO2PbO2、、BDD。4.2[24]pH、4—14—、[2526]。、COD、BDD、、GC。2404.3。M．Polcaro[27]BDDdiuron34－DCA0．05mol/L0．05mol/LH2SO40．17mmol/L、DCA2mmol/LCE20％SO42-。BDDCA[28]。4.4BELLAGAMBA[29]BDD1mol/LHClO4。。4.5NO3-[30~33]NO3-+H2O+2e-=NO2-+2OH-1NO3-+3H2O+5e-=1/2N2+6OH-2NO3-+7H2O+8e-=NH4OH+9OH-3Levy-Clement[27]-1.5~-1.7V10%-2V29%。5。12.5mmol/L[34]。1a1.67V。1b50。。1cd2.84VRHE10s20s。e40s。1。2.521.510.50mA·cm-20.60.811.21.41.61.822.2/V1.210.80.60.40.2002040jpeak/j0peak/s（a）=（e）（d）（e）（b）ab5c2.84VSHE10sd2.84VSHE20se2.84VSHE40s。100mVs-1T=25℃。jpeak/j0peakj0peak[34]。11mol/LHClO42.5mmol/LBDD241164BDD2。BDD2。M.Panizza[17]。。。JohnH.T.Luong[35]BDD。H2OH++eBDD1/2O2+H++e-BDDOHBDDH2O2H2O2solO2O31/2O2+H++e-O+H++e-2BDD2BDD1H2O→OH·+H++e-141H2SO422H2SO4+2OH·→H2SO4H++H2O22HClO4H2O2H2O2O22OH·→H2O23H2O2electrkde→H2O2solution4H2O2→O2+H+2e-53O3OH·O6OO2O378OH·→O·+H++e-6O·→O27O·+O2→O384BDDOH·BDDCO2CBDD+2OH·→CO2+2H++e-9H2S2O8H2O2O3。COMNINELLIS[36]FOTI[37]BDDBDD+H2O→BDD·OH+H++e-10BDD·OH+R→BDD+mCO2+nH2O11BDD·OH→BDD+1/2O2+H++e-12BDD·OH10·OHRCO2H2O11———12。BDDCO2。2BDD。、242BDD。2i=20~60mAcm-2T=20~60℃pH=3~11NH3-N[23]i=30mAcm-2T=30℃1mol/LH2SO470%~90%[38~40]i=1~30mAcm-21mol/LHClO4100%[41]i=30~150mAcm-2initialTOC100mgdm-3O2-[42]i=36mAcm-21mol/LKCN+1MKOHCN-95%[4344]i=30~50mAcm-2initialCOD2500mg/lCOD500mg/l90%[45]i=4~20mAcm-2initialTOC=15mg/l6%～12%[46]i=7~36mAcm-2initialCOD1500-8000mg/l85%~100%[47]i=15~60mAcm-21mol/LH2SO4[48]i=30~60mAcm-25000mg/lNa2SO4、[49~51]i=50mAcm-2impingingcell[52]i=0.05~0.20mAcm-2[53]i=30mAcm-20.1mol/LNa2CO3[54]i=15~60mAcm-25000mg/lNa2SO4or1mol/LH2SO4100%[55~58]i=15~60mAcm-240%[58]i=380~630mAcm-2COD90％98％[59]6BDDBDDBDD1BDD。BDDBDDBDD。2BDDBDDPt、Au、NiCu。BDDBDD。3BDD。[1].[J].2007363:569~572.[2]YORAMOREN.CapacitivedeionizationCDIfordesalinationandwatertreatment-pastpresentandfutureareview[J].Desalination20082281-3:10~29.243164[3]RAOTNFUJISHIMAA.Recentadvancesinelectrochemistryofdiamond[J].DiamondandRelatedMaterials200093-6:384~389.[4]TRIBIDASARIA.IVANDINIRIKASATOYOSHIHIROMAKIDEet.al.Electroanalyticalapplicationofmodifieddiamondelectrodes[J].DiamondandRelatedMaterials20041311-12:2003~2008.[5]LIMP.Y.LINF.Y.SHIHH.C.et.al.Improvedstabilityoftitaniumbasedboron-dopedchemicalvapordepositeddiamondthin-filmelectrodebymodifyingtitaniumsubstratesurface[J].ThinSolidFilms200851618:6125~6132.[6]PLESKOVYUV.ElectrochemistryofDiamondARenew[J].Russ.J.Electrochem.20023121275~1291.[7]TSUBOTAATFUKUIATSAITOATetal．Surfacemorphologyandelectricalpropertiesofborondopeddiamondfilmssynthesizedbymicrowave-assistedchemicalvapordepositionusingtrimethylboronondiamond100substrate[J].DiamondandRe1atedMaterials200091362~1368．[8]FOXNAMARYSDAVISTJetal．Field.emissionstudiesofboron-dopedCVDdiamondfilmsfollowingsurfacetreatments[J]．DiamondandRelatedMaterials199761135~1142.[9]。[J].20051755~63.[10]ALEHASHEMSCBOMRSFSTROJEKJWetal．Cyclicvoltammetricstudiesofchargetransferreactionsathighlyboron-dopedpolycrystallinediamondthin-filmelectrodes[J]Anal.Chem.l995.6728l2~282l.[11]———[J].20039150~56.[12][J].200824121~24.[13]PANIZZAMCERISOLAG.Applicationofdiamondelectrodestoelectrochemicalprocesses[J].ElectrochimicaActa200551:191~199.[14]COLIEYALWILLIAMsCGDHAENENSJUetal．Examinationofthespatiallyheterogeneouselectroactivityofboron-dopeddiamondmicroarrayelectrodes[J].Ana1Chem2006782539~2548.[15]BAUMERUSSCHA