IRLR3410PBF中文资料

IRLR/U3410PbFHEXFET®PowerMOSFETSDGVDSS=100VRDS(on)=0.105ΩID=17ADescription
ParameterMax.UnitsID@TC=25°CContinuousDrainCurrent,VGS@10V17ID@TC=100°CContinuousDrainCurrent,VGS@10V12AIDMPulsedDrainCurrent
60PD@TC=25°CPowerDissipation79WLinearDeratingFactor0.53W/°CVGSGate-to-SourceVoltage±16VEASSinglePulseAvalancheEnergy150mJIARAvalancheCurrent
9.0AEARRepetitiveAvalancheEnergy
7.9mJdv/dtPeakDiodeRecoverydv/dt5.0V/nsTJOperatingJunctionand-55to+175TSTGStorageTemperatureRangeSolderingTemperature,for10seconds300(1.6mmfromcase)°CAbsoluteMaximumRatingsParameterTyp.Max.UnitsRθJCJunction-to-Case–––1.9RθJAJunction-to-Ambient(PCBmount)**–––50°C/WRθJAJunction-to-Ambient–––110ThermalResistanceD-PAKTO-252AAI-PAKTO-251AALogicLevelGateDriveUltraLowOn-ResistanceSurfaceMount(IRLR3410)StraightLead(IRLU3410)AdvancedProcessTechnologyFastSwitchingFullyAvalancheRatedFifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesignerwithanextremelyefficientdeviceforuseinawidevarietyofapplications.TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications.PD-95087ALead-FreeIRLR/U3410PbF2(BR)DSSDrain-to-SourceBreakdownVoltage100––––––VVGS=0V,ID=250µA∆V(BR)DSS/∆TJBreakdownVoltageTemp.Coefficient–––0.122–––V/°CReferenceto25°C,ID=1mA––––––0.105VGS=10V,ID=10A––––––0.125WVGS=5.0V,ID=10A––––––0.155VGS=4.0V,ID=9.0AVGS(th)GateThresholdVoltage1.0–––2.0VVDS=VGS,ID=250µAgfsForwardTransconductance7.7––––––SVDS=25V,ID=9.0A––––––25µAVDS=100V,VGS=0V––––––250VDS=80V,VGS=0V,TJ=150°CGate-to-SourceForwardLeakage––––––100nAVGS=16VGate-to-SourceReverseLeakage––––––-100VGS=-16VQgTotalGateCharge––––––34ID=9.0AQgsGate-to-SourceCharge––––––4.8nCVDS=80VQgdGate-to-Drain(Miller)Charge––––––20VGS=5.0V,SeeFig.6and13td(on)Turn-OnDelayTime–––7.2–––VDD=50VtrRiseTime–––53–––nsID=9.0Atd(off)Turn-OffDelayTime–––30–––RG=6.0Ω,VGS=5.0VtfFallTime–––26–––RD=5.5Ω,SeeFig.10Betweenlead,6mm(0.25in.)frompackageandcenterofdiecontactCissInputCapacitance–––800–––VGS=0VCossOutputCapacitance–––160–––pFVDS=25VCrssReverseTransferCapacitance–––90–––ƒ=1.0MHz,SeeFig.5ElectricalCharacteristics@TJ=25°C(unlessotherwisespecified)nHIGSSSDGLSInternalSourceInductance–––7.5–––RDS(on)StaticDrain-to-SourceOn-ResistanceLDInternalDrainInductance4.5IDSSDrain-to-SourceLeakageCurrentSDGParameterMin.Typ.Max.UnitsConditionsISContinuousSourceCurrentMOSFETsymbol(BodyDiode)––––––showingtheISMPulsedSourceCurrentintegralreverse(BodyDiode)
––––––p-njunctiondiode.VSDDiodeForwardVoltage––––––1.3VTJ=25°C,IS=9.0A,VGS=0VtrrReverseRecoveryTime–––140210nsTJ=25°C,IF=9.0AQrrReverseRecoveryCharge–––7401100nCdi/dt=100A/µstonForwardTurn-OnTimeIntrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)Source-DrainRatingsandCharacteristicsA1760Notes:
VDD=25V,startingTJ=25°C,L=3.1mHRG=25Ω,IAS=9.0A.(SeeFigure12)Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.(Seefig.11)**Whenmountedon1squarePCB(FR-4orG-10Material).Forrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994ISD≤9.0A,di/dt≤540A/µs,VDD
≤V(BR)DSS,TJ≤175°CThisisappliedforI-PAK,LSofD-PAKismeasuredbetweenleadandcenterofdiecontactUsesIRL530NdataandtestconditionsPulsewidth≤300µs;dutycycle≤2%IRLR/U3410PbF(A)DV,Drain-to-SourceVoltage(V)DSA20µsPULSEWIDTHT=25°CJVGSTOP15V12V10V8.0V6.0V4.0V3.0VBOTTOM2.5V2.5V0.11101000.1110100I,Drain-to-SourceCurrent(A)DV,Drain-to-SourceVoltage(V)DSA20µsPULSEWIDTHT=175°CVGSTOP15V12V10V8.0V6.0V4.0V3.0VBOTTOM2.5V2.5VJ0.11101002345678910T=25°CJGSV,Gate-to-SourceVoltage(V)DI,Drain-to-SourceCurrent(A)V=50V20µsPULSEWIDTHT=175°CJADS0.00.51.01.52.02.53.0-60-40-20020406080100120140160180JT,JunctionTemperature(°C)R,Drain-to-SourceOnResistanceDS(on)(Normalized)V=10VGSAI=15ADIRLR/U3410PbF4(nC)GV,Gate-to-SourceVoltage(V)GSV=80VV=50VV=20VDSDSDSAFORTESTCIRCUITSEEFIGURE13I=9.0AD1101000.40.60.81.01.21.4T=25°CJV=0VGSV,Source-to-DrainVoltage(V)I,ReverseDrainCurrent(A)SDSDAT=175°CJ11010010001101001000V,Drain-to-SourceVoltage(V)DSI,DrainCurrent(A)OPERATIONINTHISAREALIMITEDBYRDDS(on)10µs100µs1ms10msAT=25°CT=175°CSinglePulseCJ0200400600800100012001400110100C,Capacitance(pF)DSV,Drain-to-SourceVoltage(V)AV=0V,f=1MHzC=C+C,CSHORTEDC=CC=C+CGS