AlN陶瓷封装的研究现状-李秀清

:1998-11-28AlN李秀清(信息产业部电子十三所,石家庄　050051)介绍了氮化铝(AlN)陶瓷在微电子器件高可靠封装中的应用现状及前景。氮化铝　多层陶瓷封装　金属化PresentStatusofAlNCeramicPackageLiXiuqing(The13thInstitute(Electronics),MinistryofInformationInductry,Shijiazhuang050051)Abstract　Aluminiumnitride(AlN)isintroducedasagoodceramicmaterialusedtopro-ducehighreliablepackagingsolutionsforawiderangeofmicroelectronicpackagingap-plications.TheapplicationsprospectofAlNisalsodiscussed.Keywords　Aluminiumnitride　Multi-layeredceramicpackage　Metallization1　引　言,()(),,(100),25,56,,80,AlN(BeO)40,BeO(1);BeOGaAsSi;BeO;,BeO,(TiW,Au,TaN,NiCr)(Mo-Mn)(Au,Ag,Cu)(DBC)Cu1,BeOBeO(4.510158cm),280290W/mK25300,BeOAlN1336219994半导体情报30%,40,BeO,RF/(BGA)1BeOAlNAl2O3(96%)Al2O3(99.5%)/gcm-32.853.283.753.8/10-6-16.34.37.17.1/W(mK)-12851802125.1/J(gK)-11.0460.75/ksi33.7274047/Gpa345350380390(1MHz)6.7109.410.2/kV/mm10.6151515(1MHz)0.00010.00050.00010.0001/8cm1015101310141014/1245320.5300.530/44445757/0.010.010.010.011,BeOBeOBeOBeO,BeO;BeO,AlNAlN,SiSiCGaAs,,AlNCrys-tallineMaterialsCrystallineMaterialsRFAlN,BeOAlNAlN;AlN;AlNCu-Ag,NiAu,Au-Si;Cu-AgNiAuAu-SiAlN,1GHzAlN,RFAlNBeO,2AlNRFRFAlNBeOBeOAlN2AlNBeO(20)BeOAlNCu-Ag(800)Ni+AuAu-SiAuRF(1GHz)14半导体情报　　　　　　　362199942　AlN的基本特性Al2O3BeOSiCAlNAl2O3,Si,;BeOSiC,,BeO,SiC,;AlN,,AlN:(1)(270W/mK),BeOSiC,Al2O35;(2)(4.510-6/)Si(3.5410-6/)GaAs(610-6/);(3)();(4),Al2O3BeO,;(5);(6);(7);(8)3　AlN封装工艺3.1AlNAlNAlN1%(wt),2.510-4cm-3,,1LmAlNAl2O3,AlN,AlN,100kg/cm2,1800AlN0.3%(wt),AlNAlN140W/mK1,1800,3.2AlNAlNAlN,:(Ag-PdCuAu)(Mo-MnW)(DBC)AlN-WAlN,;AlNAg-PdCu,,Mo-MnWAlNAl2O3,,,AlN(AlN-DBC),AlNW,AlNAlN,,AlNAlNTi/Pd/AuNiCr/Pd/AuTa2N/NiCr/Pd/Au,,,3.2.1　埋层金属化,0.5Lm,13m8/W,:1),;2)1536219994半导体情报,;3)AlN,3.2.2　通孔金属化AlN,,AlNAlN,,,,,,CO2NdYAGAlN,AlN(Al2O3),,AlNAlNBeO,AlN,AlN,,,0.0110-9,,66m8/3.2.3　表面金属化,,AlN,,,AlN,AlN,AlNH2/N221bs,70MPa,30m8/AlN,AlN,,:,,AlN,;,AlNAlNAlN,AlN,AlN,CrystallineMaterials12AlNAlNAlN,,,,,,900MHzAlNNiAuAg-Cu,NiAuAlN,Au-SiAlNNiAu,Au3.3,SEM-E16半导体情报　　　　　　　362199940.001/,0.0040.0120.002/,0.001/0.5/W1.5/W0.001/,3.4AlN:RFAlNTi/Pt/Au,,AlN,AlN,MCM,AlNI/O50%,0.025I/O0.015,0.0080.00444,0.1%,AlN,,0.0054　AlN基片的应用AlN,Al2O3(90%)AlNBeO(99.5%)77/W39/W34/WAlNAl2O3,BeO,,AlNBeO,Al2O3,AlNBeO4.5W5.1W,3.5W,AlNBeO,AlN4.1AlNPGAVLSI,,ECLI/OPGAAlN,SiCAlNI/O208I/OSiC,5.7/W,Al2O31/2300I/OSiCSiCPGA,80AlNAlN(CERDIP)AlN,40I/OAlNPGA,Y2O3300I/OAlNPGA,260W/mK4.1.1　AlNPGA设计3,24,,3PGA/mm/mm/%300(AlN)642848215.515.510.3208(Al2O3)5434313.513.59.9208(SiC)54237884.1208(Al2O3)445459.59.54.588(BeO/Al2O3)330304.54.52.31736219994半导体情报48.2mm48.2mm2.4mm(),17mm17mm300I/OAlNPGA,,,BeOMoBeO/Al2O3Mo/Al2O3,AlN,,AlN,,,,,Al,22AlN,300I/O(PWB)6,,,,240,20%5,24100Lm,215Lm3AlNPGA3AlN300I/OPGA4.1.2　多层与共烧AlNY2O3CaO18001700(1700),WMoAlN,,W,4.1.3　引脚的钎焊,TiTi-CuTi-Ag-CuAlN300I/OPGATi-Ag-CuI/OAlN,Ti-Ag-Cu,PGA,W4.1.4　AlN多层封装的工艺流程AlN(0.11.0mm),Al2O31.7LmAlNY2O3CaO,,18半导体情报　　　　　　　36219994750Lm,(,,),300Lm,W(),250kg/cm210040,AlNAlNW17001,AlN16%,301800NiAuNiAu5Lm2LmAlNPGAVLSI,AlN,4.2GaAlAsLEDGaAlAsLEDGaAlAsSiO2Si3N4AlN95/W86/WAlN,AlN,AlN,AlN,AlNGaAlAsLED4.3InGaAsPLDInGaAsPAlN105/W88/W70/W,AlN1/6,AlN,AlN,AlN,AlN5　AlN实用化需要突破的工艺技术AlN,(DBC)(PGA)5.1AlNAlN,:1)AlN;2);3),,AlN,,AlN,1%,AlN;Y-Al-OAlN,,(),AlN,AlN5.2/,AlN,AlNAlNMoW,,AlN1936219994半导体情报:AlN;PGA(Ti),CuAg,,Ti-Ag-CuAlN,830,6　结论与展望,AlN,AlN,IC,ICAlN,,,AlNBeO,Al2O3,RF1IwaseN,AnzaiK,ShinozakiK.Aluminumnitridesub-strateshavinghighthermalconductivity.SSTechnol,1986;29(10):1351382MiyashiroF.Highthermalconductivityaluminumnitrideceramicsubstratesandpackages.IEEETransCHMT,1990;13(2):3133193KobaR,HarrisJ.Aluminum-nitridepackagesprovidecon-sistentperformance.Microwaves&RF,1997;36(10):1561664SpragueJ.Multilayerceramicpackagingalternatives.IEEETransCHMT,1990;13(2):3903965SzwedaR.BreakthroughtechnologyenablesARTtoopti-misealuminumnitrideforelectronics.-sReview,1997;10(3):32346SepulvedaJL.BeOpackageshousehigh-powercompo-nents.Microwave&RF,1998;37(3):1111217IwaseN.Thickfilmsanddirectbondcopperformingtech-nologiesforaluminumnitridesubstrates.IEEETransCHMT,1985;18(2):2532588KurokawaY.AlNsubstrateswithhighthermalconducti-vity.IEEETransCHMT,1985;8(2):2472529KuramotoN.TranslucentAlNceramicsubstrate.IEEETransCHMT,1986;9(4):38639010ElliceY.Designofmetallizationsandcomponentsforalu-minumnitridepackagesforVLSIC,1991;14(3):53854211MartinI,Herman.Noveltechniquesformillimeter-wavepackages.1995;43(7):15161523,,1984,,,GaNSi1-xGexGaN-T/RGaNCMOS20半导体情报　　　　　　　36219994