平面掺杂异质结场效应管的二维电子气浓度和材料结构尺寸之间的关系

205Vol.20,No.519995CHINESEJOURNALOFSEMICONDUCTORSMay,19993,1941,,1998201204,19982052143(050051),D,,,,,.EEACC:2560R,2560S;PACC:0530,71451Anderson30,1980AlGaAsöGaAs.(HEMT.PHEMT)500GHz,(Ku)20..(2DEG)[1,2],2DEG[36],[5,7],AlGaAsöGaAsFET.90,D(),,2DEG,,200mSömm600mSömm,1300mSömm.,2DEG.2,221.1,D,D1D2,D12DEG,D2.,,.NdD,,:d2Vdx2=-qn2(x)E0Er2(1)n2(x)=0Kx0-Nd-(K+D1+D2)x-K(2)-(dV2dx)=N20x=00x=-(K+D1)(3)V2=V20x=00x=-(K+D1)(4)Er2;V2(x)2,x=-(K+D1);V20N20;n2(x);K,,,.K,..(1):E0Er2N20=qD1Nd(5)-V20=qD1NdE0Er2(K+D12)(6),,,.,:-V2m=qD2NdE0Er2(d+D22)(7),:dN1dx=qn1(x)E0Er1(8):09320N1=N10x=00x=(9)N1(x)1;N10;n1(x)1.2DEGns,:E0Er1N10=qns(10):E0Er1N10=E0Er2N20=qns(11)32DEG,,,2DEG.,,.,,,.,,.,()..,:En=(¶2m3)1ö3(32PqN10)2ö3(n+34)+n=1,2,3(12),2DEGDi,,i:Di=qm3P¶2Ei0Ei(13)(10)(12)N10ns.2DEGns,2:f(Ef-Ei)=11+gexp[(Ei-Ef)ökT](14)Ei=Ef,g=1,,g=1ö2.ns1=i=0ni=i=0DiEi+1Eif(Ef-Ei)dEi(15)(5)(11):ns0=(2E0Er2NdV20q+K2N2d)1ö2-KNd(16)2:Ef=$Ec-V20-$(17)(15)(16)ns1ns0,ns,Ef(),.1935:241dD2Nd,0,0,0.,DVp,-(t+K)-K:Vp=qNd(D1+D2)E0Er2(d+(D1+D2)ö2)(18)2,2(V2m-Vg)-($Ec-Es),,Vp,N20(t+K),.:Vp-N20(K+t)=(V2m-VG)-($Ec-Ef)(19)(11):qns=E0Er2t+K(VG+Voff)(20)Voffqns=0Vg:Voff=V2m-Vp+Ef-$Ec(21)Ich:Ich=qnszBM(22)z;B:B=1-0.02t(lgöns)1ö2(23)lg,M[7],.5,2DEGns.ns,2,ns,,.,,.,(NdD1D2Kd)2DEG;2DEG.2DEGnsKDNd3.ns1()ns2()$Ec013V015V,(1)(2)(3)(4)Nd61017112101821410184181018cm-3.,$Ec,2DEG;K,2DEG.2DEG,K$Ec,K293203Nd,nsK,.Nd2DEG,,Nd,2DEG.K,.:,K5nm2DEG,,K5nm,K2DEG;,.,,2DEG,,2DEG;$Ec,,.K,;K,.D,;2DEG,.Al0.22Ga0.78AsöIn0.2Ga0.8AsöGaAsPHEMT,K=315nm,SIMSNd=211661018cm-3,2118101231151012cm-2,Ich281338mA.$Ec=01319V,ns=31491012cm-2,Ich=366mA,.6,HEMTPHEMT2DEGns,.:,ns.,,$Ec;,DNd,(DKdtNd)..[1]T.Ando,Phys.Rev.B,1976,13(8):34683477.[2]T.Ando,A.B.PowlerandF.Stern,Rev.Mod.Phys.,1982,54(2):437672.[3]DanielDelagebeaudenfandNugenT.Linh,IEEE.Trans.ElectronDevices,1982,29(6):955960.[4]KwyyoLee,MicheelShar,TimothyJ.Drummondetal.,J.Appl.Phys.,1983,54(4):20932096.[5]S.T.Lee,C.R.CrowellandC.P.Lee,IEDM,1983,103106.[6]FrankStermandSarkarDasSarma,Phys.Rev.B,1984,30(2):840848.[7]Qincui0XiaandM.El.Nokali,SolidStateElectron.,1990,33(9):11791187.3935:RelationBetweenTwo-DimensionalElectronGasDensityandStructrueSizeofMaterialofPlanarDopedHetero-JunctionFETLiXiaobai(NationalLaboratoryforGaAsIntegratedcircuits,The13thInstitudeofMinistryElectronicIndustry,Shijiazhuang050051)Received4January1998,revisedmanuscriptreceived14May1998AbstractTherelationamongstructuresizeofmaterialspacelayer,modulateddopedlayer,depletedbarrierlayerandtwo2dimensionalgasdensityofheterostructureinterfacelayer,pinchoffvoltage,channelcurrenthasbeendescribed.Itisshownthattheproposedexpressionsplayanessentialroleinparameterdesignofmaterialanddevice.EEACC:2560R,2560S;PACC:0530,714549320