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22119922MicroeeCronesVol.22,No.Feb,1992(,,610054),Ic,ICAsIC(A/DAsIC),,,,IC,,,.,:,,,,,11948,(IC),IC,ICIC(IC)(,,)IC199112,1C,,11985~1988,IC1/31/4,,,,1995,IC88:12,20009.0:1.0,.1.:11985~1988()IC()()()298516484198619175191634995583231632147925007!,987_~i;;_25275{J6536_11,2.,!386{173164239197,15%,MOS,,As1C,MOS2;:;{,s{23!Mos}2},86{}}16}8:5{__17.1MoSIC17,212Ic2.1,,,,,,IC,,,,,:1)IC;2);3);4);5)cADcATCAM;6);7)2IC,ICCAD2.2ICMOSCMOSICCMOSIC,198416,198625,1991,ICCMOS,,,CMOSLslvLSICM0s,,45,,VoHvDD,Vo:OCS,3~18V,,CMOS,101O,,CMOS,IC,CM0s(HCM-05)SV,HCMOSLSTTL,,1988,4DRAM1sRAMCMOSCMOS,As1C,,,(MpU)nMOSCMOS,CMOS,,,,,,,,,,,,VLSI,MOS,CMOS,BicMOS,BICMOS1985,BICMOSCMOS,,,cM0s,BICMOS,IC,1956,1987BICMOS300,CMOS16.7BICMoS,10000,199015DRAMIM,32,BICMOS,BICMOS10,IC3ICIC3IcIcICJ()ICGaASMOSBieMoslIeL1982EL445TTLIC{pMOS192221192198729048011141,{12}25,{376*{4,,*1992()7152}52419884M199016M(m)(m)050140199364M035007{95{19256M}1625;15{2.34DRAM,,0.5m(DSW),0.35,DSW1989,0.3X01~0.2mASICGaA,ICRIE,01m,0.5m16MDRAM,DSwX50,64M,1:1X3m2m,1l5m,1m,.8m10:1DSwXRIE,6onm,_vLSI0.1~.5m,,,VLSI2000,0.7~0.5m0.5m-,,,1:l10:15:1(DSW),,X02~0.5m,16MDRAM1XXO2~O5m,,0.20.5(RIE)RIE,V,,,v5LSI/VLSICAD(1:6:1;o)(1;11:2){(1;31:7){,},i--.).-{i;{Calma{}}//{00/CVDMOCzD24IccADLSI/VLSICAD19761987,,5(As1C),cadence,MentorGraphies(SynoPsysEDAConnections),Synops-VHDL(VSICHardwareDeoeriPtionLangua)(SystemSimulator)Rntor1989OPenDoor,199642,(eyentdriven)EDA(),(ConcePtDriVen)SynopsysVHDL(Behavioral)(Regi,terTransfer)(Gate)IC(VHSIC),SynOPsys,,2..1VHDLvHDL,(),,IEEElo76VHDLVHDLVHDL~L:!}!!}1}}!:¹VHDL,º»,¼(Mierosystem)EDAVHDL19871990ICCADC.LIsPDCOmpi-.ler:Hie-lachical(),(coneurrentTopdown,BottomUp;interface,EDA:CIF,GDS,EDIF(EleetricDesignIntereh-angeFormat)EBES(EleetronBeamEx-posureSystem);,EDA;EDA;EDAComPilor,,;(ExpertStem)EDA2.4.2(DesignAnalyzer),,ECL,,,,,243(signComPiler)Aslc,,,PLA,,,,AsIC,CAE,,;ASIC;,;,,,2.4.4(TestComPiler)CATVLSIASIC,100,(DFT),,:;;,;,/;10,,;2.4.5(LibraryComPiler),,2.4.6ICCAD,LSI/VLSICAD,LSICAD,.IGDRAM10,IC(GSI)3MO5DRAM,,DRAM2.5~34DRAM,4,DR-AM,4,31994(0.9~0.5m)(.5m)DRAM,8010,ICCAD,:(1):ASICASICICIS(),Mosls(MosImplementationsystem)MoSCAD(FOundry)(2),SynopsysVHDLEDA,EDA(3)CAD,SUN,Microsystems,HAPollo,DEC,SMB;CAD,CAD3DRAMICDRAMIC,,DRAM64k256kIM0.8mZoomm4MDRAM,20.5m16MDRAM025m64M,256MDRAM2000,0.12m10. 3.~--10a1975198011MOSDRAM{{_10...}{{{.11!1...10ae:9---,,J{{{111111107777777777777777777777777777777f{{{Jee,,..,,J,I{{{jjj......}}},,111llltttttttttlll444444444,,................................................................:m!!!,:::::::::::::,QSSS_0555nnn{!1111usss!!!!!~.}}}}}}}}}}}}}}}1;;;;;;;;1980420(DRAM2(ULSI)198c64kDRAM,VLSI,256k~IMpRAM619952000lc111115}2000()#lJ(,,1(){Ll(,)))4888400010005OOO7222600010005OOO3m84447000777355522222~3m33325559994555zzzzz~l5m06665552~33310~1555{{{lom06~1113~555,2~3IC,IMDRAM,,1,CMOS,IMDRAMO5,16MDRAM,IC1995IC,1~1.55,200010~15x990~1995,IC16.8,1995~200011,66,2000,1VLslIC3~5,¹,,;º,;»,,,¼,,,½,;¾,;¿,IMDRAM35,4M4.6,64M102,,VLsl4(ASIC)4.1AsICASIC,Lsl/vLSIASICIC,,LSI/VLsl(FPLD),ICASSPASSPLSI/vL-s1,AsIC,,,5ASIC,,30,1519911,1989,50,As1C24,16,FPLDn1993,ASIC23IC,ASIC,29839,1988148,1990AsIC850%,1993AsICIC20.9,AsIC2000,ASIC,ULsl,ASICt7,,,,I,,AsIC.,,,a3,,..:::.,1{)6AslcL6As1CLSI,,ASIC1990,0.5,4.2ASICCM052000ry1J,f0snsECL60O,12x12CMOSASICAsIC168ASICASIC,,Ic5m3m,CMOSASICCAD,ASICASICCATASIC,,CAD,,AsIC,1~2mCMOS,,CAT,110,,AsICICLsl/vLSI(,,D/A),ASIC,ICIC,,AsIC,,ASIC,,,AsICCAD.95IC5.1GaAsMESFETgIJHEMTICGaAsMESFET,GaAsMESFET10oGHz,GaAsMESFET,GaAsMESFETKuGaAsMESFETICIC,,5,,ICICIC,HEMT()1980TMimura,:GaAMESFET1.5~2(2);200~300GHz,,62GHz,HEMT.41~0.43W/mm,MESFET70;MESFET,,,,DCFL,,,77K5sps,10.2ps;,LslVLsl,16kRAM16x16HEMT,(Dz),PHEMT()10cm,0.25mHEMT64kSRAM,,,,HEMT,,HEMTIC5HT()(siBJT),BJT,,51BJT,;loGHz,20GHz,IC,BJTHBT,51BJT;GaAsMESFET,1/t,HBTHBTICLSI1200NORHBTECL,,7.7GHz,dcA/DHBT,,,.0,5,HBTIC,HEMT,,,,;,,,HBTIC66.1,,()()(),(Hv/P),,s1TMo-sFET,:¹,;º,,,»,,;¼,,MO5FET,VDMOS,IGBT,cl-GBT(IGBT),sINFET(FET),RMOS(MOS),MCT(MOS)SENFET1000V/SAVDMOS,1800V/10A,12o0V/100AIGBT,RMOSO00V/300ASIT::),SPIC(SmartPowerIC)l{JlvIC(HghVoloaIC)sPIe,,450V,Ron1.5QRESURFLDMOS;HA13702AHVIC,400VLDMOSMos30,50,IGBTMCTvDM0s(78),45v/SAvDM0s;SO0v/SAIGBT,180V7.5WLDMOS-11OV/4A100MHzVHTMoS,MCT,LIGBT,RMOSffi1JTVDMOS,1324(O511276.2MOS:l),(BIMoS),IGTLIGBTSINFETCIGBTMCT,VDMCSBJTIJ,R,:MOSfr..,.!151016.1.,.|l|seIltjLreeeeL8::19;1::2::aV6,VDMos3~5IGBT,TCIGBT(ComplementaryIGBT),pMOS,,IGBT(latchuP),,TsINFET(SchottkyINjectionFET)LDMoS,MOS(MCT)vDMosIoBT,MCT,,5,53,(9),(Smartdiscre-tes),sENsFET,RMOS,UMOS,,LDMOS,HVIC,,,9VDMOSIGBTMCT2)Hv/P,(SPIC),(HVIC),HWP()(BJTCMOS),,,Hv/P3),;,,(SDB);(JTT),(FLR)(VLD),Hv/PHv/P,,GP,VDMOS~MCT,Hv/PTheStateoftheArtandProsPeetofMieroe!ectronlesZhangKaihua,LiZhaoji,XieMngxianandZhangQinzhongDept.MieroeeeroeSe.&Enger.,Uers.ofEleeroeSe.&Tee02.610054,Cgdu,SehuaAbstraetThetatetheartofmieroeleetroniesteehnology15analyzed.InPartieular,theProeessinganddesignteehniquesforintegratedeireuitsaredeePlyexPlored.ThePro-speetofvariousasPeetsofmieroeleetroniesatthoendofthiseentury15viewedPro-Posalsandsuggestionsforthede
本文标题:微电子技术的发展现状与展望
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