IRFP4768PBF规范

02/26/09

PowerMOSFETBenefits
ImprovedGate,AvalancheandDynamicdV/dtRuggedness
FullyCharacterizedCapacitanceandAvalancheSOA
EnhancedbodydiodedV/dtanddI/dtCapability
Lead-FreeApplications
HighEfficiencySynchronousRectificationinSMPS
UninterruptiblePowerSupply
HighSpeedPowerSwitching
HardSwitchedandHighFrequencyCircuitsSDGGDSGateDrainSource
IRFP4768PbFTO-247ACSDGDAbsoluteMaximumRatingsSymbolParameterUnitsID@TC=25°CContinuousDrainCurrent,VGS@10VID@TC=100°CContinuousDrainCurrent,VGS@10VIDMPulsedDrainCurrent
PD@TC=25°CMaximumPowerDissipationWLinearDeratingFactorW/°CVGSGate-to-SourceVoltageVdv/dtPeakDiodeRecoveryV/nsTJOperatingJunctionandTSTGStorageTemperatureRangeSolderingTemperature,for10seconds(1.6mmfromcase)Mountingtorque,6-32orM3screwAvalancheCharacteristicsEAS(Thermallylimited)SinglePulseAvalancheEnergymJIARAvalancheCurrent
AEARRepetitiveAvalancheEnergy
mJThermalResistanceSymbolParameterTyp.Max.UnitsRθJCJunction-to-Case–––0.29RθCSCase-to-Sink,FlatGreasedSurface0.24–––°C/WRθJAJunction-to-Ambient–––40Max.9366370770SeeFig.14,15,22a,22b52024-55to+175±203.410lbfin(1.1Nm)A°C300VDSS250VRDS(on)typ.14.5mΩmax.17.5mΩID93A
 2


Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.LimitedbyTJmax,startingTJ=25°C,L=0.50mHRG=25Ω,IAS=56A,VGS=10V.Partnotrecommendedforuseabovethisvalue.ISD≤56A,di/dt≤950A/µs,VDD≤V(BR)DSS,TJ≤175°C.Pulsewidth≤400µs;dutycycle≤2%.SDGCosseff.(TR)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%VDSS.Cosseff.(ER)isafixedcapacitancethatgivesthesameenergyasCosswhileVDSisrisingfrom0to80%VDSS.
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 Static@TJ=25°C(unlessotherwisespecified)SymbolParameterMin.Typ.Max.UnitsV(BR)DSSDrain-to-SourceBreakdownVoltage250––––––V∆V(BR)DSS/∆TJBreakdownVoltageTemp.Coefficient–––0.20–––V/°CRDS(on)StaticDrain-to-SourceOn-Resistance–––14.517.5mΩVGS(th)GateThresholdVoltage3.0–––5.0VIDSSDrain-to-SourceLeakageCurrent––––––20µA––––––250IGSSGate-to-SourceForwardLeakage––––––100nAGate-to-SourceReverseLeakage––––––-100RGInternalGateResistance–––0.71–––ΩDynamic@TJ=25°C(unlessotherwisespecified)SymbolParameterMin.Typ.Max.UnitsgfsForwardTransconductance100––––––SQgTotalGateCharge–––180270nCQgsGate-to-SourceCharge–––52–––QgdGate-to-Drain(Miller)Charge–––72–––QsyncTotalGateChargeSync.(Qg-Qgd)–––108–––td(on)Turn-OnDelayTime–––36–––nstrRiseTime–––160–––td(off)Turn-OffDelayTime–––57–––tfFallTime–––110–––CissInputCapacitance–––10880–––pFCossOutputCapacitance–––700–––CrssReverseTransferCapacitance–––210–––Cosseff.(ER)EffectiveOutputCapacitance(EnergyRelated)–––510–––Cosseff.(TR)EffectiveOutputCapacitance(TimeRelated) –––830–––DiodeCharacteristicsSymbolParameterMin.Typ.Max.UnitsISContinuousSourceCurrent––––––93A(BodyDiode)ISMPulsedSourceCurrent––––––370A(BodyDiode)
VSDDiodeForwardVoltage––––––1.3VtrrReverseRecoveryTime–––180–––nsTJ=25°CVR=200V,–––200–––TJ=125°CIF=56AQrrReverseRecoveryCharge–––1480–––nCTJ=25°Cdi/dt=100A/µs–––2260–––TJ=125°CIRRMReverseRecoveryCurrent–––16–––ATJ=25°CtonForwardTurn-OnTimeIntrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)ConditionsVDS=50V,ID=56AID=56AVGS=20VVGS=-20VMOSFETsymbolshowingtheVDS=125VConditionsVGS=10VVGS=0VVDS=50Vƒ=1.0MHz,SeeFig.5VGS=0V,VDS=0Vto200V,SeeFig.11VGS=0V,VDS=0Vto200V TJ=25°C,IS=56A,VGS=0Vintegralreversep-njunctiondiode.ConditionsVGS=0V,ID=250µAReferenceto25°C,ID=5mA
VGS=10V,ID=56AVDS=VGS,ID=250µAVDS=250V,VGS=0VVDS=250V,VGS=0V,TJ=125°CID=56ARG=1.0ΩVGS=10VVDD=163VID=56A,VDS=0V,VGS=10V
 (V)0.010.11101001000ID,Drain-to-SourceCurrent(A)VGSTOP15V10V8.0V7.0V6.0V5.5V4.8VBOTTOM4.5V≤60µsPULSEWIDTHTj=25°C4.5V0.11101001000VDS,Drain-to-SourceVoltage(V)1101001000ID,Drain-to-SourceCurrent(A)4.5V≤60µsPULSEWIDTHTj=175°CVGSTOP15V10V8.0V7.0V6.0V5.5V4.8VBOTTOM4.5V345678VGS,Gate-to-SourceVoltage(V)0.11101001000ID,Drain-to-SourceCurrent(A)TJ=25°CTJ=175°CVDS=50V≤60µsPULSEWIDTH-60-40-20020406080100120140160180TJ,JunctionTemperature(°C)0.00.51.01.52.02.53.03.5RDS(on),Drain-to-SourceOnResistance(Normalized)ID=56AVGS=10V1101001000VDS,Drain-to-SourceVoltage(V)100100010000100000C,Capacitance(pF)VGS=0V,f=1MHZCiss=Cgs+Cgd,CdsSHORTEDCrss=CgdCoss=Cds+CgdCossCrssCiss0306090120150180210240QG,TotalGateCharge(nC)0.02.04.06.08.010.012.014.0VGS,Gate-to-SourceVoltage(V)VDS=200VVDS=125VVDS=50VID=56A
 4(V)0.11101001000ISD,ReverseDrainCurrent(A)TJ=25°CTJ=175°CVGS=0V0.00.51.01.5VSD,S