HSMS-2802中文资料

SurfaceMountRFSchottkyBarrierDiodesTechnicalDataHSMS-28XXSeriesFeatures•SurfaceMountSOT-23/SOT-143Package•LowTurn-OnVoltage(AsLowas0.34Vat1mA)•LowFIT(FailureinTime)Rate*•Six-sigmaQualityLevel•Single,DualandQuadVersions•TapeandReelOptionsAvailable*FormoreinformationseetheSurfaceMountSchottkyReliabilityDataSheet.Description/ApplicationsTheseSchottkydiodesarespecificallydesignedforbothanaloganddigitalapplications.Thisseriesoffersawiderangeofspecificationsandpackageconfigurationstogivethedesignerwideflexibility.TypicalapplicationsoftheseSchottkydiodesaremixing,detecting,switching,sampling,clamping,andwaveshaping.TheHSMS-2800seriesofdiodesisoptimizedforhighvoltageapplications.TheHSMS-2810seriesofdiodesfeaturesverylowflicker(1/f)noise.ThePackageLeadCodeIdentificationTOPVIEWCOMMONCATHODE#4UNCONNECTEDPAIR#5COMMONANODE#3SERIES#2SINGLE#01231234RINGQUAD#71234BRIDGEQUAD#81234CROSS-OVERQUAD#91234123123123HSMS-2820seriesofdiodesisthebestall-aroundchoiceformostapplications,featuringlowseriesresistance,lowforwardvoltageatallcurrentlevelsandgoodRFcharacteristics.TheHSMS-2860seriesisahighperformancediodeofferingsuperiorVfandultra-lowcapacitance.NotethatHP’smanufacturingtechniquesassurethatdicefoundinpairsandquadsaretakenfromadjacentsitesonthewafer,assuringthehighestdegreeofmatch.2ElectricalSpecificationsTA=25°C,SingleDiode[4]NearestMinimumMaxi-MaximumMaximumMaxi-TypicalPartPackageEquivalentBreak-mumForwardReversemumDynamicNum-Mark-AxialLeaddownForwardVoltageLeakageCapac-Resis-beringLeadPartNo.VoltageVoltageVF(V)@IR(nA)@itancetanceHSMS[5]Code[3]CodeConfiguration5082-VBR(V)VF(mV)IF(mA)VR(V)CT(pF)RD(Ω)[6]2800A00Single2800704001.015200502.035(1N5711)2802A22Series2803A33CommonAnode2804A44CommonCathode2805A55UnconnectedPair2807A77RingQuad[6]2808A88BridgeQuad[6]2810B00Single2810204001.035200151.215(1N5712)2812B22Series2813B33CommonAnode2814B44CommonCathode2815B55UnconnectedPair2817B77RingQuad[6]2818B88BridgeQuad[6]2820C00Single283515*3400.73010011.0122822C22Series2823C33CommonAnode2824C44CommonCathode2825C55UnconnectedPair2827C77RingQuad[6]2828C88BridgeQuad[6]2829C99Cross-overQuad2860T00SingleNone43500.630—0.35102862T12SeriesPair2863T33CommonAnode2864T44CommonCathode2865T55UnconnectedPairTestConditionsIR=10μAIF=VF=0VIF=5mA*IR=1mA[1]f=100μA1.0MHz[2]Notes:1.ΔVFfordiodesinpairsandquadsin15mVmaximumat1mA.2.ΔCTOfordiodesinpairsandquadsis0.2pFmaximum.3.Packagemarkingcodeisinwhite.4.EffectiveCarrierLifetime(τ)forallthesediodesis100psmaximummeasuredwithKrakauermethodat5mA,exceptHSMS-282Xwhichismeasuredat20mA.5.Seesectiontitled“QuadCapacitance.”6.RD=RS+5.2Ωat25°CandIf=5mA.3AbsoluteMaximumRatings[1]TA=25°CSymbolParameterValueIfForwardCurrent(1msPulse)1AmpPtTotalDeviceDissipation250mW[2]PIVPeakInverseVoltageSameasVBRTjJunctionTemperature150°CTstgStorageTemperature-65to150°CNotes:1.Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothisdevice.2.CWPowerDissipationatTLEAD=25°C.Deratetozeroatmaximumratedtemperature.QuadCapacitanceCapacitanceofSchottkydiodequadsismeasuredusinganHP4271LCRmeter.Thisinstrumenteffectivelyisolatesindividualdiodebranchesfromtheothers,allowingaccuratecapacitancemeasurementofeachbranchoreachdiode.Theconditionsare:20mVR.M.S.voltageat1MHz.HPdefinesthismeasurementas“CM”,anditisequivalenttothecapacitanceofthediodebyitself.Theequivalentdiagonalandadjacentcapacitancescanthenbecalculatedbytheformulasgivenbelow.Inaquad,thediagonalcapaci-tanceisthecapacitancebetweenpointsAandBasshowninthefigurebelow.ThediagonalcapacitanceiscalculatedusingthefollowingformulaC1xC2C3xC4CDIAGONAL=_______+_______C1+C2C3+C4C1C2C4C3ABCTheequivalentadjacentcapacitanceisthecapacitancebetweenpointsAandCinthefigurebelow.Thiscapacitanceiscalculatedusingthefollowingformula1CADJACENT=C1+____________111––+––+––C2C3C4Thisinformationdoesnotapplytocross-overquaddiodes.SPICEParametersParameterUnitsHSMS-280XHSMS-281XHSMS-282XHSMS-286XBVV7525157.0CJ0pF1.61.10.70.18EGeV0.690.690.690.69IBVA10E-510E-510E-410E-5ISA3x10E-84.8x10E-92.2x10E-85.0x10E-8N1.081.081.081.08RSΩ30106.05.0PBV0.650.650.650.65PT2222M0.50.50.50.54TypicalParametersatTA=25°C(unlessotherwisenoted),SingleDiodeVF-FORWARDVOLTAGE(V)Figure1.TypicalForwardCurrentvs.ForwardVoltageatTemperatures—HSMS-2800Series301010.10.01IF-FORWARDCURRENT(mA)0.10.20.30.40.50.60.70.80.955°C85°C–35°C25°C–5°CVF-FORWARDVOLTAGE(V)Figure2.TypicalVfMatch,HSMS-2800SeriesPairsandQuads.301010.3301010.3IF-FORWARDCURRENT(mA)ΔVF-FORWARDVOLTAGEDIFFERENCE(mV)0.20.40.60.81.01.21.4IF(LeftScale)ΔVF(RightScale)VF-FORWARDVOLTAGE(V)Figure3.TypicalForwardCurrentvs.ForwardVoltageatTemperatures—HSMS-2810Series.301010.10.01IF-FORWARDCURRENT(mA)0.10.20.30.40.50.60.70.8VF-FORWARDVOLTAGE(V)Figure4.TypicalVfMatch,HSMS-2810SeriesPairsandQuads.301010.3301010.3IF-FORWARDCURRENT(mA)ΔVF-FORWARDVOLTAGEDIFFERENCE(mV)0.30.40.50.50.60.7IF(LeftScale)ΔVF(RightScale)VF-FORWARDVOLTAGE(V)Figure5.TypicalForwardCurrentvs.ForwardVoltageAtTemperatures—HSMS-2820Series.301010.10.01IF-FORWARDCURRENT(mA)0.10.20.30.40.50.60.7VF-FORWARDVOLTAGE(V)Figure6.TypicalVf