霍尔器件108

InSbHallElement•AbsoluteMaximumRatings•ElectricalCharacteristics(Ta=25˚C)•DimensionalDrawing(mm)•ClassificationofOutputHallVoltage(VH)InputVoltage(V)InputCurrent(mA)19Note:Whenordering,specify3-rankorwiderrange(e·g·,BCD).•InputCurrentDeratingCurve•InputVoltageDeratingCurveNote:Forconstant-voltagedrive,staywithinthisinputvoltagederatingcurveenvelope.Note:RinofHallelementdecreasesrapidlyasambienttemperatureincreases.Ensurecompliancewithinputcurrentderatingcurveenvelope,throughouttheoperatingtemperaturerange.20100–60–40–20020406080100120InputResistanceRin:250to4502.01.00–60–40–20020406080100120HW-108A•High-sensitivityInSbHallelement.•Supermini-moldSMTpackage(fitsSOT343landpattern).•Shippedinpacket-tapereel(4000pcsperreel).ItemSymbolTopr.Tstg.IcConst.CurrentDriveLimit20–40to+125–40to+110UnitmA˚C˚CPinningConditionsVH[mV]RankB=50mT,Vc=IVConstantVoltageDriveMax.InputCurrentOperatingTemp.RangeStorageTemp.RangeDielectricStrengthOutputHallVoltageInputResistanceOutputResistanceOffsetVoltageTemp.CoefficientofVHTemp.CoefficientofRinItem100VD.CConst.VoltageDriveB=50mT,Vc=IVB=0mT,Ic=0.1mAB=0mT,Ic=0.1mAB=0mT,Vc=IVB=50mT,Ic=5mAB=0mT,Ic=0.1mAConditions1.0122250250–7Min.mVmV%/˚C%/˚CUnit–1.8–1.8Typ.450320450+7Max.1(±)3(±)Input2(±)4(±)OutputA122to150B144to174C168to204D196to236F266to320E228to2745˚5˚5˚5˚43212.1±0.11.30.40.40.10to0.10.32.1±0.21.25±0.10.250.80+0.1NInputResistanceRin:250to450MVHRinRoutVosVHRinSymbolNotes:1.VH=VHM–Vos(VHM:meterindication)2.VH=XX1003.Rin=XX100Rin(T1)1(T3–T2)VH(T3)–VH(T2)(T3–T2)Rin(T3)–Rin(T2)VH(T1)1T1=20˚C,T2=0˚C,T3=40˚CAmbientTemperature.(˚C)AmbientTemperature.(˚C)Note:ItisrequestedtoreadandacceptIMPORTANTNOTICE.PleasebeawarethatAKEproductsarenotintendedforuseinlifesupportequipment,devices,orsystems.UseofAKEproductsinsuchapplicationsrequirestheadvancewrittenapprovaloftheappropriateAKEofficer.Certainapplicationsusingsemiconductordevicesmayinvolvepotentialrisksofpersonalinjury,propertydamage,orlossoflife.Inordertominimizetheserisks,adequatedesignandoperatingsafeguardsshouldbeprovidedbythecustomertominimizeinherentorproceduralhazards.InclusionofAKEproductsinsuchapplicationsisunderstoodtobefullyattheriskofthecustomerusingAKEdevicesorsystems.20–50050100150200017501500125010007505002500IcVin–50050100150403020100IcVin600.0500.0400.0300.0200.0100.00.001020304050IcVin1200100080060040020000.00.51.01.52.05101520IcVin201816141210864200.00.51.01.52.05101520IcVinacgi2000180016001400120010008006004002000-50050100150VH-BVH-Vc,VH-IcVH-TVOS-Vc,VOS-IcVOS-T*MagneticFluxDensity1(mT)=10(G)Rin-TAmbientTemperature(˚C)MagneticFluxDensityB(mT)AmbientTemperature(˚C)AmbientTemperature(˚C)Ic(mA)InputCurrentVc(V)InputVoltageIc(mA)InputCurrentVc(V)InputVoltageIc:(mA)Vc:(V)Ic:(mA)Vc:(V)IcconstVcconstIc=5(mA)Vc=1(V)Ta=25(˚C)IcconstVcconstB=50(mT)Ta=25(˚C)IcconstVcconstB=0(mT)Ta=25(˚C)IcconstVcconstIc=5(mA)Vc=1(V)B=0(mT)IcconstVcconstIc=5(mA)Vc=1(V)B=50(mT)•CharacteristicCurvesOutputVoltage:VH(mV)OffsetVoltage:Vos(mV)OutputVoltage:VH(mV)OutputVoltage:VH(mV)OffsetVoltage:Vos(mV)HW-108AInputResistance:Rin()InThisExample:Rin=350(),Vos=4.7(mV),Vc=1(V)