高能分辨率深能级瞬态谱仪器(DLTS)

DLTSPresentationDeepLeveltransientSpectroscopyPioneersinMeasurementsofDepth*picturetakenfromSerway,RaymondA.,Beichner,RobertJ.andJewett,JohnW.PhysicsforScientistsandEngineers5thEdition,SaundersCollegePublishing:Orlandon,FL,2000Motivation:MeasuringtheDepthofDefect–RelatedTrapsinSemiconductorsCarrierTrappingConductanceBandValenceBandDefectLevelTrapdepthEnergy-CarrierEscapekTLowTemperaturekTslowfastHighTemperature--HistoryofDLTS•TheDLTSTechniquewasdevelopedin1974byDVLangasanextensiontotraditionalThermallyStimulatedTransientCapacitance(TSCAP).•Itisnowwellestablishedasamethodtoquantifyelectricallyactivedeeplevels.•ItiscomplementarytootheranalyticaltechniquessuchasSIMSHowaretheselevelscharacterized?•Thelevelsarecharacterizedbya“Fingerprint”whichincludes:–Energy–Concentration(amountofdefectspresent)–CaptureCrossSection(effectivenessofthelevel)a)SchottkybarrierunderreversebiasVRb)Schottkybarrierwithfillpulseapplied.DeeplevelsforcedundertheFermilevelfillwithcarriersc)ThermalemissionofcarriersfromfilleddeeplevelsnowabovetheFermilevelasthefullpulseendsd)Capacitancechangesobservedasthebiasonthetestsampleischanged=fulldeeplevel=emptydeeplevel(a)(b)(c)VpVRAutomaticArrheniusPlotDigitalDLTSIsothermalApplications–FullyautomatedandVERYFAST•trapprofilingwithdepth:varyingpulsebias,reversebiasorboth•capturecrosssectionwithpulsewidthsto8nspossible•ICTS-likeanalysis(variationofTwandtemperature)–forathoroughandaccurateinvestigationofasingleisolatedDLTSpeak–forextendingcryostatrange–formeasuringtemperaturesensitivedevicesDigitalDLTSMOS/MISApplication–MOS/MISmeasurementandevaluationusingbypulsedC-VandDLTSinadditiontoZerbstAnalysis(C-tcharacterisation)•evaluationofgenerationprocesses•measurementofinterfacestatedensity•oxidequalityBasicHardwareOptions–NitrogenCryostat•Micromanipulatorprobes–HeliumCryostat•Smalllightweightprobes–Capacitancebridge15mVor100mV–±100Vpowersupplyoption(±20Visstandard)VariableTransientPeriodWidthMeasurementBibliographyforDLTSsomeexamplesofDLTSonawidevarietyofmaterialsCdTeLeigh,W.B.andKremerR.B.DeepLevelDefectsinCdTeMat.Res.Symp.Proc.Vol102411987MRS.CdTeCollins,R.T.,Kuech,T.F.andMcgill,T.C.DLTSStudyofdeeplevelsinn-typeCdTeJ.Vac.Sci.Technol.21(1)1911982ExtendedPeaker,A.R.,Kaniewsak,MKaniewsakJ.,Evans,J.H.,Hamilton,B.andLorimerGDefectsCharacterizationoftheElectronicPropertiesofExtendedDefectsinSiliconElectrochem.Soc.Proc.Vol91-991251991CrandVSadoh,T.,WatanabeM.,Nakashima,H.andTsurushima,T.,(Si)DeepLevelsofVanadiumandChromium-HydrogencomplexesinSilicon17thInternationalConferenceonDefectsinSemiconductors,GmundenJuly18-231993DXCentresDobaczewskiL,KaczorP.,andPeaker,A.R.FinestructureobservedinthermalemissionprocessfortheEL2DefectinGaAs17thInternationalConferenceonDefectsinSemiconductors,GmundenJuly18-231993SiGeErzgräber,H.B.,Kissinger,G.,Krüger,D.,Morgenstern,T.,Schmalz,K.,Shilz,J.,Kurten,K.andOsinsky,A.PointdefectsinSiGeexpitaxiallayersandBulkCrystals17thInternationalConferenceonDefectsinSemiconductors,GmundenJuly18-231993InPWalters,R.J.andSummers,G.P.DeepLevelTransientSpectroscopyStudiesofProtoninrradiatedp-typeInPJ.Appl.Phy.69(9),6488,1991ZninSiWeiss,S.,Beckmann,R.andKassing,R.TheElectricalPropertiesofZincinSiliconAppl.Phys.A50151-1561990FT-DLTSWeiss,S.,andKassingR.DeepLevelTransientFourierSpectroscopy(DLTFS)-AtechniquefortheAnalysisofDeepLevelPropertiesSolidSt.Electronics31(12),1733-17421998ZnSe(Au)Besomi,P.,andWessels,B.W.DeepLevelDefectsinAu/ZnSeSchottkydiodesElectronicsLetters16(21),7941980CdSBesomi,P.,andWessels,B.W.DeepLevelDefectsinPolycrystallinecadmiumsulfideJ.Appl.Phys.51(8)43051980BibliographyforDLTSsomeexamplesofDLTSonawidevarietyofmaterialsPhystechFT1030Pos.1:HERA-DLTSElectronicincludingBoonton7200capacitancemeterPos.2:HE-1020CompleteSoftwareSoftwarepackagePos.3:ConstantCapacitanceoptionPos.4:100Voption(usefulforGaN,SiC)Pos.5:FastPulseInterfacePos.6:Agilent33519pulsegeneratorPos.7:Opticalexcitationoptionincl.one1mW670nmlaserdiodeexcitationPos.12:Lowtemperaturecryostat，LH2PhystechFT1030