STE180N10中文资料

STE180N10中文资料STE180N10N-CHANNEL100V-5.5m?-180A-ISOTOPPOWERMOSFETsTYPICALRDS(on)=5.5m?s100%AVALANCHETESTEDsLOWINTRINSICCAPACITANCEsGATECHARGEMINIMIZEDsREDUCEDVOLTAGESPREADINDUSTRIALAPPLICATIONS:sSMPS&UPSsMOTORCONTROLsWELDINGEQUIPMENTsOUTPUTSTAGEFORPWM,ULTRASONICCIRCUITS?INTERNALSCHEMATICDIAGRAMFebruary1999TYPEVDSSRDS(on)IDSTE180N10100V180AISOTOPABSOLUTEMAXIMUMRATINGSSymbolParameterValueUnitVDSDrain-sourceVoltage(VGS=0)100VVDGRDrain-gateVoltage(RGS=20k?)100VVGSGate-sourceVoltage±20VIDDrainCurrent(continuous)atTc=25oC180AIDDrainCurrent(continuous)atTc=100oC119AIDM(?)DrainCurrent(pulsed)540APtotTotalDissipationatTc=25oC450WDeratingFactor3.6W/oCVISOInsulationWithstandVoltage(AC-RMS)2500VTstgStorageTemperature-55to150oCTjMax.OperatingJunctionTemperature150oC(?)Pulsewidthlimitedbysafeoperatingarea(1)ISD≤180Α,di/dτ≤200A/μs,VDD≤V(BR)DSS,Tj≤TJMAX1/8THERMALDATARthj-caseRthc-hThermalResistanceJunction-caseMaxThermalResistanceCase-heatsinkWithconductiveGreaseAppliedMax0.270.05oC/WoC/WAVALANCHECHARACTERISTICSSymbolParameterMaxValueUnitIARAvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax)60AEASSinglePulseAvalancheEnergy(startingTj=25oC,ID=IAR,VDD=25V)720mJELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)OFFSymbolParameterTestConditionsMin.Typ.Max.UnitV(BR)DSSDrain-sourceBreakdownVoltageID=1mAVGS=0100VIDSSZeroGateVoltageDrainCurrent(VGS=0)VDS=MaxRatingVDS=MaxRatingTc=125oC50500μAμAIGSSGate-bodyLeakageCurrent(VDS=0)VGS=±20V±400nAON(?)SymbolParameterTestConditionsMin.Typ.Max.UnitVGS(th)GateThresholdVoltageVDS=VGSID=250μA234VRDS(on)StaticDrain-sourceOnResistanceVGS=10VID=90A5.57m?ID(on)OnStateDrainCurrentVDSID(on)xRDS(on)maxVGS=10V180ADYNAMICSymbolParameterTestConditionsMin.Typ.Max.Unitgfs(?)ForwardTransconductanceVDSID(on)xRDS(on)maxID=90A70SCissCossCrssInputCapacitanceOutputCapacitanceReverseTransferCapacitanceVDS=25Vf=1MHzVGS=01840.5nFnFnFSTE180N102/8ELECTRICALCHARACTERISTICS(continued)SWITCHINGONSymbolParameterTestConditionsMin.Typ.Max.Unittd(on)trTurn-onDelayTimeRiseTimeVDD=50VID=90ARG=4.7?VGS=10V(ResistiveLoad,seefig.3)65230nsnsQgQgsQgdTotalGateChargeGate-SourceChargeGate-DrainChargeVDD=80VID=180AVGS=10V48590210680nCnCnCSWITCHINGOFFSymbolParameterTestConditionsMin.Typ.Max.Unittd(on)trTurn-offDelayTimeFallTimeVDD=50VID=90ARG=4.7?VGS=10V(ResistiveLoad,seefig.3)280100nsnstr(Voff)tftcOff-voltageRiseTimeFallTimeCross-overTimeVDD=80VID=180ARG=4.7?VGS=10V(InductiveLoad,seefig.5)100170260nsnsnsSOURCEDRAINDIODESymbolParameterTestConditionsMin.Typ.Max.UnitISDISDM(?)Source-drainCurrentSource-drainCurrent(pulsed)180540AAVSD(?)ForwardOnVoltageISD=180AVGS=01.5VtrrQrrIRRMReverseRecoveryTimeReverseRecoveryChargeReverseRecoveryCurrentISD=180Adi/dt=100A/μsVDD=50VTj=150oC(seetestcircuit,fig.5)250187515nsμCA(?)Pulsed:Pulseduration=300μs,dutycycle1.5%(?)PulsewidthlimitedbysafeoperatingareaSafeOperatingAreaThermalImpedanceSTE180N103/8OutputCharacteristicsTransconductanceGateChargevsGate-sourceVoltageTransferCharacteristicsStaticDrain-sourceOnResistanceCapacitanceVariationsSTE180N104/8NormalizedGateThresholdVoltagevsTemperatureSource-drainDiodeForwardCharacteristicsNormalizedOnResistancevsTemperatureSTE180N105/8Fig.1:UnclampedInductiveLoadTestCircuitFig.3:SwitchingTimesTestCircuitsForResistiveLoadFig.2:UnclampedInductiveWaveformFig.4:GateChargetestCircuitFig.5:TestCircuitForInductiveLoadSwitchingAndDiodeRecoveryTimesSTE180N106/8DIM.mminchMIN.TYP.MAX.MIN.TYP.MAX.A11.812.20.4660.480B8.99.10.3500.358C1.952.050.0760.080D0.750.850.0290.033E12.612.80.4960.503F25.1525.50.9901.003G31.531.71.2401.248H40.157J4.14.30.1610.169K14.915.10.5860.594L30.130.31.1851.193M37.838.21.4881.503N40.157O7.88.20.3070.322BEHONJKLMFACGDISOTOPMECHANICALDATASTE180N107/8Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics.TheSTlogoisatrademarkofSTMicroelectronics?1999STMicroelectronics–PrintedinItaly–AllRightsReservedSTMicroelectronicsGROUPOFCOMPANIESAustralia-Brazil-Canada-China-France-Germany-Italy-Japan-Korea-Malaysia-Malta-Mexico-Morocco-TheNetherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-UnitedKingdom-U.S.A.