线性电子电路教案

/1.1Semiconductor10-310-9Ω•1.1.1cmSiGeGaAsValenceElectron(IntrinsicSemiconductor)(CovalentBond)1-1-1(a)(b)1-1-10KFreeElectron11-1-21-1-2IntrinsicConcentrationnikT2Ego23ieATn−=1.1.2NPDopedSemiconductorNNMajorityCarries,(MinorityCarriers),(Donor)2PP(Acceptor)PP1.1.31.21.2.1VE-+XPNPNNPPN(PNjunction).PNPNP3NNNPPPNPNPNVB2idaTBnNNlnVV≈qkTVT=ThermalVoltage,T=300KVT≈26mVNP+VVB0-xpxnPN21dadaBpnNNNNVq2xxlo+=+=εPN1.2.2Volt-AmpereCharacteristicsPNPNPNPNPNPN4PNPNPNPNPNPNPNPNPNPNPNPNPN)1e(IITVVs−=ISVVT=kT/qkqTT=300KVT=26mVVIVVVTTVVseII=IsIlgV3.2IsIVVTT==V|V|VTTVVeI≈-Is,Turnon,Cut-inVoltage,VD(on)VVD(on)IVVD(on)IPNPNVD(on)=0.7VPNVD(on)=0.3VPNPNIs510°CIsPN1.2.3PNVVBRBreakdownVoltageVBRPNPN|VBR|7VVBR4V4V7V6IzminIzmax:PN1.2.4PNCBCDCBPNPNCDPNPNNPPPNPNNPN71.31.3.1PN)1e(IsITrsnVVV−=−)IsI1ln(nVITrs++=VnIIn≈1,In≈2.rs8uDiDuDiDID∆iDQ∆uDUDID∆iDQ∆uDUDqrjrjTQTQVVTQVIVIsI])1VVe(Is[VVIrj1Q≈+=−∂∂=∂∂==∆VPNCj1.3.2LoadLine1.9R//1RR,,,2R1RVVTDDD+22R==TTIRVV−=IQ,VQRRDRDVVV−RVRRI)on(DDDD)on(DDDQ−≈+=)on(DDQ)on(DQVRIVV≈+=8IQ=0.9mA2.P.2R=l0kΩ,∆VDD=sin2π×100t(V)∆Vo.VDD=0ΩΩ30)93.0/26(I/VrjQT≈==rs=5Ω,∆I=∆VDD/R=0.1sin2π×100t(mA)∆V=∆I(rs+rj)≈3.5sin2π×100t(mV)VDD2D1R2100kD2R2200kVDD1100V25V++--ViVDD2D1R2100kD2R2200kVDD1100V25V++--ViVoVoRRrsrj+-VDD∆VIV/Vo137.5DDDD+∆V+-V-2510025/V101.41.4.1uotuotu2u2u1u2+-RLuo-u1u2+-RLuo-++)VRRRinD+π(1Vo=LimRLRDIIzILitingCircuit1.4.211VoVIVIHVIHVILVILRD1D2VoVI12