半导体封装制程与设备材料知识介绍

半导体封装制程与设备材料知识介绍半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）－封装后段（MARK-PLANT）－测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半导体制程Oxidization(氧化处理)Lithography(微影)Etching(蚀刻)DiffusionIonImplantation(扩散离子植入)Deposition(沉积)WaferInspection(晶圆检查)Grind&Dicing(晶圓研磨及切割)DieAttach(上片)WireBonding(焊线)Molding(塑封)Package(包装)WaferCutting(晶圆切断)WaferReduce(晶圆减薄)LaserCut&packagesaw(切割成型)Testing(测试)Lasermark(激光印字)IC制造开始前段結束后段封装开始製造完成封装型式概述IC封装型式可以分为两大类，一为引脚插入型，另一为表面黏着型构装型态构装名称常见应用产品SingleIn-LinePackage(SIP）PowerTransistorDualIn-LinePackage(DIP）SRAM,ROM,EPROM,EEPROM,FLASH,MicrocontrollerZigzagIn-LinePackage(ZIP）DRAM,SRAMSmallOutlinePackage(SOP）Linear,Logic,DRAM,SRAMPlasticLeadedChipCarrier(PLCC）256KDRAM,ROM,SRAM,EPROM,EEPROM,FLASH,MicrocontrollerSmallOutlinePackage(SOJ）DRAM,SRAM,EPROM,EEPROM,FLASHQuadFlatPackage(QFP）MicroprocessorBALLGridArray(BGA）Microprocessor封裝型式(PACKAGE)ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)8~64DIPDualIn-linePackagePlastic2.54mm(100miles)1directionlead3~25SIPSingleIn-linePackage封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic2.54mm(100miles)1directionlead16~24ZIPZigzagIn-linePackagePlastic1.778mm(70miles)20~64S-DIPShrinkDualIn-linePackage封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)half-sizepitchinthewidthdirection24~32SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54mm(100miles)PBGAPinGridArray封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic1.27mm(50miles)2directionlead8~40SOPSmallOutlinePackagePlastic1.0,0.8,0.65mm4directionlead88~200QFPQuad-FlatPack封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27,0.762mm(50,30miles)2,4directionlead20~80FPGFlatPackageofGlassCeramic1.27,1.016,0.762mm(50,40,30miles)20~40LCCLeadlessChipCarrier封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27mm(50miles)j-shapebend4directionlead18~124PLCCPlasticLeadedChipCarrierCeramic0.5mm32~200VSQFVerySmallQuadFlatpackSanDiskAssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBondSMT(Optional)半导体设备供应商介绍-前道部分PROCESSVENDORMODELSMT-PRINTERDEKHOR-2ISMT–CHIPMOUNTSIMENSHS-60TAPINGNITTODR3000-IIIINLINEGRINDER&POLISHACCRETECHPG300RMSTANDALONEGRINDERDISCO8560DETAPINGNITTOMA3000WAFERMOUNTERNITTOMA3000DICINGSAWDISCODFD6361TSKA-WD-300TPROCESSVENDORMODELDIEBONDHITACHIDB700ESECESEC2007/2008ASMASM889898CUREOVENC-SUNQDM-4SWIREBONDERK&SK&SMAXUMULTRASKWUTC-2000ASMEagle60PLASMACLEANMARCHAP1000TEPLATEPLA400MoldTOWAYPS-SERIESASAOMEGA3.8半导体设备供应商介绍-前道部分半导体设备供应商介绍PROCESSVENDORMODELINKMARKE&RE&RTECA-PRINTPR-601LASERMARKGPMSE+SE39+SE36+SE45鈦昇BLAZON-2600BALLATTACHVANGUARDVAI6300AMSAMS1500iD/DYAMADACU-1028-1GPMSE00+SH01+SH02+SE07FORMINGYAMADACU-1029-1GPMSEH01+SH02+SH25半导体设备供应商介绍PROCESSVENDORMODELSINGULATIONGPMSN39+SH52YAMADACUPLATINGMECOEDF+EPL2400AEMSBP2400-EDLEADSCANRVSILS-7700ICOS9450EVER-TECHTS-60半导体设备供应商介绍TesterDigitalCredenceSC312DigitalTeradyneJ750Mix-SignalCredenceQuartetoneandone+Mix-SignalHPHP93000P600Mix-SignalHPHP93000C400Mix-SignalTeradyneCatalystRFHPHP94000Flash&SRAMCredenceKalosMix-SignalYokogawaHandlerBGA/QFPSeikoEpsonNS-6000ProberWaferTSKTSK200/UF300LeadScannerBGA/QFPRVSILS/GS5700Tape&ReelBGAReelTechMTTR3000SocketBGA/MLFJohnstechBurn-InBGA/MLFSSEB1120M常用术语介绍1.SOP-StandardOperationProcedure2.FMEA-FailureModeEffectAnalysis3.SPC-StatisticalProcessControl4.DOE-DesignOfExperiment5.IQC/OQC-Incoming/OutingQualityControl6.MTBA/MTBF-betweenassit/Failure7.UPH-UnitsPerHour8.CPK-品质参数晶圆研磨(GRINDING)1.GRINDING工艺l研磨1.研磨分為粗磨與細磨,晶圓粗糙度需小於0.08um..2.細磨厚度在10~20um之間,而二次研磨參數中,細磨厚度為15um(二次研磨變更作業膠膜為230um).3.研磨標準厚度:a.HSBGA:11~13MIL標準研磨厚度為12MILb.PBGA:11~16MIL標準研磨厚度為12MIL.c.LBGA:9.5~10.5MIL標準研磨厚度為10MIL.5.研磨時機器會先量側晶片厚度以此為初始值,粗磨厚度及最終厚度(即細磨要求的厚度).Spindle1粗磨spindle2細磨清洗區離心除水離心除水背面朝上Wafer研磨時晶圓與SPINDLE轉向2.Grinding相关材料ATAPE麦拉BGinding砂轮CWAFERCASSETTLE工艺对TAPE麦拉的要求：1。MOUNTNodelaminationSTRONG2。SAWADHESIONNodieflyingoffNodiecrack工艺对麦拉的要求：3。EXPANDINGTAPEDiedistanceELONGATIONUniformity4。PICKINGUPWEAKADHESIONNocontaminationTAPE種類:a.ADWILLD-575UV膠膜(黏晶片膠膜白色)厚度150UMb.ADWILLＧ-295黏晶片膠膜黑色厚度120UMc.ADWILLS-200熱封式膠帶(去膠膜膠帶)白色厚度７５ＵＭd.FURUKAWAUC-353EP-110AP(PRE-CUT)UV膠膜白色厚度110ume.FURUKAWAUC-353EP-110AUV膠膜白色厚110umf.FURUKAWAUC-353EP-110BPUVTAPE白色厚110um.g.ADWILLG16P370黑色厚80UM.h.NITTO224SP75UM3.Grinding辅助设备AWaferThicknessMeasurement厚度测量仪一般有接触式和非接触式光学测量仪两种；BWaferroughnessMeasurement粗糙度测量仪主要为光学反射式粗糙度测量方式；4.Grinding配套设备ATaping贴膜机BDetaping揭膜机CWaferMounter贴膜机Taping需確認wafer是否有破片或污染或者有氣泡等等現象.特别是VOID；上膠膜後容易發生的defect为龟裂或破片；切割正面上膠上膠電腦偵測方向取出背面朝下DetapinglWafermountWaferframe晶圓切割(Dicing)1.Dicing设备介绍ADISCO641/651系列BACCERTECH东京精密200T/300TMainSectionsIntroductionCuttingArea:Spindles(Blade,Flange,CarbonBrush),CuttingTable,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoaderUnits:Spinner,Elevator,Cassette,RotationArmBladeClose-ViewBladeCuttingWaterNozzleCoolingWater