IGBT和MOSFET功率模块-全本B

Pon(1kW/Div)vDS(40V/Div)iD(40A/Div)dvdt-0,1μs/DiviD(10A/Div),s02μ/DivPoff(2kW/Div)vDS(50V/Div)0,2μs/DivvCE(200V/Div)Pon(20kW/Div)iC(20A/Div)0,2μs/DivvCE(200V/Div)iC(20A/Div)Poff(20kW/Div)a)b)1.2.31.11td(on)td(off)3.5.13.5.43.63.8MOSFETIGBT1.2.+di/dtdv/dtdi/dtdv/dt:MOSFET250kHz100kHzIGBT600V30kHz1200V20kHz1700V10kHz3300V3kHz:MOSFET500kHz250kHzIGBT150kHz3.2IGBTMOSFETIGBTTj=150°C3.3IGBTIGBTPfw/T1.vCEsat=f(iC,vGE)2.3.Pon/TPoff/T1.2.3.4.IGBTPtot/T=Pfw/T+Pon/T+Poff/TPfw/D1.vF=f(iF)2.3.IGBT1.2.3.4.Ptot/D=Pfw/D+Poff/DnIGBTmPtot/M=(n*Ptot/T)+(m*Ptot/D)3.4TvdvCEvoutDvFiFiLvdiLHiONOFFLLiLttttiLavgiCiFEoff/TEon/TEoff/DEfw/DEfw/TiCvoutt1TIGBTPon/T=fs*Eon/T(vdiLLTj/T)Poff/T=fs*Eoff/T(vdiLHTj/T)Pfw/T=iC(t)•VCE(t)dtPfw/T=iLavg*vCEsat(iLavgTj/T)*(t1/T)=iLavg*vCEsat(iLavgTj/T)*DTDTiLavgPoff/D=fs*Eoff/D(vdiLLTj/D)Pfw/T=vF(t)•iF(t)dtPfw/D=iLavg*vF(iLavgTj/D)*(1-DT)=iLavg*vF(iLavgTj/D)*(DD)DDIGBTIGBT3.51TTt11t1T0```Vd/2Vd/2V1iC1iC2iF2i1iF11/fouttfw/T1vref;vhvref(t)vh(t)1/fSi1(t)tfw/D2IGBTT2IGBTT1DiodeD2DiodeD1ttttiC1iF2ϕ2fouti1;v1v1(t)v1(1)(t)vrefvhfoutfsvrefvhm0m1ˆˆIGBTIGBTT1D2IGBT3.2.1.25060HzIGBT1.[194]y=f(x)=A+Bx+Cx2ABC3.1-3.41.2.50Hz3.4.y=A+BxIGBTIGBTT1Pfw/T1=•+m•cos•(3.1)DiodeD2Pfw/D2=•–m•cos•(3.2)ˆˆAfw/T•i1+Bfw/T•i12π41-tdead2TsˆˆAfw/T•i1+Bfw/T•i1283πˆˆAfw/D•i1+Bfw/D•i12π41+tdead2TsˆˆAfw/D•i1+Bfw/D•i1283πˆˆˆBon+off/T+Bon+off/T•i1π4ˆBoff/D+Coff/D•i1π4tdeadtdead3.61200V/50AIGBTtdead051015202530IGBTDiodePfwreal|Pfwreal-Pfwideal|[%]00,020,040,060,08tdead/TSy=Bx+Cx2IGBTIGBTT1Pon+off/T1=fs•i1(3.3)DiodeD2Poff/D1=fs•i1(3.4)1200V/50AIGBT3.7051015202530354005101520253035IGBTDiodePfw[W]IRMS[A]m*cosφ=0.640.1-0.640102030405005101520253035Psw[W]IRMS[A]IGBTDiodeVd=700V500V°°mcosIGBT1.31.4m*cos=0.64m*cos=0.1m*cos=-0.64IGBTa)b)ˆ2.1.2.50Hz3.4.5.fsfoutIGBTT1y=A+BxvCEsatvCEsat(t)=VCE0+rCE•iC(t)=VCE0+rCE•i1sintVCE0iC=0rCEIGBTIGBTT1Pfw/T1=+m•cos•(3.5)D2y=A+BxvFvF(t)=VF0+rF•iF(t)=VF0+rF•i1sintVF0iF=0rFD2Pfw/D2=–m•cos•(3.6)ˆˆ12ˆˆVCE0•i1+rCE•i12π4ˆˆVCE0•i1+rCE•i1283πˆˆVF0•i1+rF•i12π4ˆˆVF0•i1+rF•i1283π12IGBTT1IGBTPon+off/T1=•fs•Eon/T+Eon/T(3.7)3.7IGBTIGBTD2Poff/D2=•fs•Eoff/D(3.8)3.83.83.5T1D2T2D1ˆi11πˆi1ˆi11πTcoup/D1Zthjc/T1Tj/T1Tj/D2Tcoup/T2Ptot/D2Ptot/T1TCThTaZthchZthhaTaRthx1Rthx4τthx1Rthx1τthx4Rthx4thjc/D2Z4=ν()[]νν=thxthxthxt/T-exp1-R(t)ZνPtotTjZthjcTcZthchThZthha3.3TaTcoup/D1Tcoup/T2T1D2D1T2[194]Zthch1.4.2.2RC3.8SEMIKRONRCZthjc3.3.63.8Tj/T1(t)=TC+Tcoup/D1+PT1(t)•Rth/T11-exp-t/th/T1(3.9)Tj/D2(t)=TC+Tcoup/T2+PD2(t)•Rth/D21-exp-t/th/D2(3.10)Tj=150°C3.2.2.13.93.10n=1n=1Ptt0t10t1TjTjmaxΔTj0t1Tjmax=Tj(t1)=P•Rth1-exp-t1/th(3.11)T(tt1)=P•Rth1-exp-t1/th-P•Rth1-exp–t-t1/th(3.12)Pt0P1T0t1t2t3P2P3jTj0Tj1ΔTj2ΔTj3Δtt1Tj1=P1•Rth1-exp-t1/th(3.13)n=1n=1n=1n=1a)b)t2Tj2=P1•Rth1-exp-t2/th+P2-P1•Rth1-exp–t2-t1/th(3.14)tmTj(tm)=P-P–1•Rth1-exp–tm-t–1/th(3.15)Zthjc3.11SKM100GB123DIGBTn=1m=1T,ijD=tTsTjmaxTjavgTjmintitTsc)n=1n=1a)b)c)TjavgRthjcPtotavgTsPtotavg=fs*(Eon+Eoff+Efw)Tjavg=Tc+Ptotavg*RthjcTjmaxZthjcPtotmaxTstPtotmax=(Eon+Eoff+Efw)/tTjmax=Tc+Ptotmax*ZthjcIGBTSKM100GB123Dfs=10kHz;Ts=100s;DT=0.2;t=20sTc=80°C;Eon+Eoff+Efw=25mJRthjc=0.2°C/W,Zthjc=0.04°C/W(3.11a)Ptotavg=250W;Ptotmax=1250WTjavg=80°C+250W*0.2°C/W=130°CTjmax=80°C+1250W*0.04°C/W=130°Cfs=2kHz;Ts=500s;DT=0.2;t=100sTc=80°C;Eon+Eoff+Efw=25mJRthjc=0.2°C/W,Zthjc=0.042°C/W(3.11a)Ptotavg=50W;Ptotmax=250WTjavg=80°C+50W*0.2°C/W=90°CTjmax=80°C+250W*0.042°C/W=90.5°Cfs=2kHz;Ts=500s;DT=0.2;t=100sTc=80°C;Eon+Eoff+Efw=125mJRthjc=0.2°C/W,Zthjc=0.042°C/W(3.11a)Ptotavg=250W;Ptotmax=1250WTjavg=80°C+250W*0.2°C/W=130°CTjmax=80°C+1250W*0.042°C/W=132.5°Cfs=50Hz;Ts=20ms;DT=0.5;t=10msTc=80°C;Eon+Eoff+Efw=5JRthjc=0.2°C/W,Zthjc=0.12°C/W(3.11a)Ptotavg=250W;Ptotmax=500WTjavg=80°C+250W*0.2°C/W=130°CTjmax=80°C+500W*0.12°C/W=140°CIGBT10kHzIGBT2kHz3kHzIGBT3.12[194]P(t)T(t)j3.8RC3.13[194]IGBT5060708090100110Tj/T[¡C]2π4πϑ[rad]fourt-0Hz5Hz50HzTjavgPtotavg020406080100120140160Ptot/T[W]ϑ[rad]2π4π°50Hz45SEMIKRONSKiiPPACK3.133.2.2.33.143kHzIGBT3.2.21.4.2.4TjmaxTj=Tjmax-TjminnTj2.7[231]TjTmLESIT[303]3.15LESITSEMIKRON199500,511,52t[s]152025303540I1RMS[A]01020304050fout[Hz]00,20,40,60,81m00,511,52t[s]505560657075808590Tj[C]00,511,5t[s]IGBTDiodeT=100°CTj,min=40°C20000SEMIKRON1,0E+041,0E+051,0E+061,0E+071,0E+0830405060708090100110Δ=mBafTkETANexpα...T[C]ΔTj,max=const.=120CTj,medium=const.=80CTj,min=const.=40CLESIT =247W/K*m =398W/K*m 150W/K*m220W/K*mAlMgSi1.2.Rthha=T/Ptot=1/(*A)Q=*A*T=PtotQATPtotRthha3.161.4.2.2RCRthhaZthhat=0P=0P=PmZthhat3.16Zthja(t)T(t)=Pm•Rth1-exp-t/thZthha(t)=T(t)/PmZthha(t)=Rth1-exp-t/thRth[266]SEMIKRON=450W125°C45°C90°C100°C)50K15%[266]1/51/153.16Zthha(t)SEMIKRONP16Rthhaa)b)35°C80°C90°CRthhaVair/tvairAVair/t=vair*ApL3.17p=f(Vair/t)FANS.XLS-2012340200400600800m3/hmbarpSKF16ASKF16BSKF16A-230-01SKF16B-230-01p=f(Vair/tL)p=f(vairL)3.18P16/...FwithFanA=7368mm2;c=0,0377xVair[m/s]0501001502002503003504004500100200300400500600Vair[m3/h]p[Pa]FanP1