IGBT超音频串联移相调功感应加热电源的研究

河南科技大学硕士学位论文IGBT超音频串联移相调功感应加热电源的研究姓名：李国伟申请学位级别：硕士专业：材料加工工程指导教师：朱锦洪@IIGBT20IGBTPID(DSP)(CPLD)0°180°DSP(DPLL)TMS320LF2407ADSPDPLLDSPCPLDIISubject:TheStudyofIGBTSuperAudio-frequencyPhase-shiftInductionHeadingPowerSupplySpecialty:MaterialsProcessEngineeringName:LiGuoweiSupervisor:Prof.ZhuJinhongABSTRACTTheinductionheatingtechnologywasusedinindustrialareafromthebeginningof20thCentury.Theworkpiecewasheatedbyelectromagneticinductioneffectandeddycurrent.Inductionheatingmethodplaysaveryimportantroleinmanufacturingandmaterialprocessing.WiththedevelopingofmicrocomputerandIGBTdevice,newsuperaudio-frequencyhasbecameanemphasisininductionheatingpower.Thispaperregardsinductionheatingpowersupplyofsuperaudio-frequencyseriesresonanceastheresearchingobject.Bytheintroductionofphase-lockloopandPIDtechnology,theinductionheatingpowersupplyrealizedfrequencytracingandphase-shiftingfor0°180°tomodifypoweroftheinductionheatingpowersupply,whichusingdigitaltechnologycontrolcombinationwithDSPandCPLD,andthisprovidehighquality,credibilitytechnologyfoundationfornumeralization,information,flexibilityandintelligentizedcontrollingoftheinductionheatingpowersupplysystem.Atthebeginning,thebasictheoryofinductionheatingandthedevelopmentofinductionheatingtechniqueareintroduced.Byanalyzingthemaincircuitoftheinductionheatingpowerandcomparingtheadvantagesanddisadvantagesbetweenseriesresonancecircuitandparallelresonancecircuit,theseriesresonanceinverterisselectedbecauseitismoresuitedtosuperaudio-frequencypowersupply.Themaincircuitisdetailedanalyzedafterconfirmationofdesignscheme.Thecalculationandselectionofparametersaredetailedexplanationforeverysystemcomponent.TherealizedmethodofimplementingPLLbasedDigitalSignalProcessor(DSP)isintroducedthroughanalyzingtheprincipleofPhased-LockedLoop(PLL).Bymeansofthecomparisonofseveralpoweradjustmode,phase-shiftingadjustinginordertoensureconstantcurrentisselected.Throughcomparatorofthetwohardwarescheme,themoresuitableoneisconfirmed,whichattainedthecreatingnumericalcontrolsignalbetweenorientarmandshiftarm.IIIThehardwarecontrolsystembasedTMS320LF2407Aisdesigned,whichincludessamplingcircuit,protectivecircuit,phase-compensatedcircuit,displaycircuitandsoon.Systemprogramiscompiledandamodelmachineismadeanddebugged.Therealwaveformofpowersupplyisofferedattheendofthispaper.Theexperimentalresultindicatedthatthecircuitiscredibleandtheprogramrunswell,andtheDPLLbasedDSPiscompetentforsuperaudio-frequency-tracking.KEYWORDSInductionheating,serialresonant,phase-shiftpowermodulation,DPLL,DSP,CPLDDissertationType:ApplicationResearch1111.120[1]200Hz0.210kHz10100kHz100kHz[2]GTRIGBTSITSITHMCTIGBT(1)(2)IGBT(3)(4)[3][3]IGBT1.21.2.121.2.1.11-11-1Fig.1-1TheschematicdiagramofinductionheatingpowersupplyiϕϕeMAXWELLdtdNeϕ−=(1-1)Nϕtmωφϕsin=(1-2)tNemωωφcos−=(1-3)13mmNffNEφφπ44.422==(1-4)()IRtIQ224.0=(1-5)(l-4)(l-5)[4][1]1.2.1.21-2IB1-3(1-2-34-5-6)LN(a-b-c-ad-e-f-d)a-be-fO-Ab-cd-eO-Aδ-2δ2δ41-21-3Fig.1-2AsingleconductoratlowfrequencyFig.1-3Thekelvineffectcausedbyhighfrequency1-4i∆−=xeJJ0(1-6)Jx0J∆1-4Fig.1-4Thekelvineffectcausedbyhighfrequency15x∆J/0J=0.37x2∆J/0J=0.142∆∆-2∆∆−=xePP201-7px0px=∆p/0p0.14∆2∆0.018∆fµρ∆frµπµρ0=∆1-8ρ0µrµf∆frµρ503=∆1-961.2.1.31i2i1-51-6[1]1i2i1-51-6Fig.1-5TheapproacheffectFig.1-6Theannuluseffect1.2.2ρµ1-7ρµ17ρµµρµ(µ=1)[5-6]1-7Fig.1-7Theresistivityandmagneticinductivitychangecurvebytemperetureofworkpiece1.2.380[1](1)(2)60%(3)(4)0.01+0.01(5)(6)81.3[3]1.3.1(200Hz10kHz)200Hz8000Hz100kW3000kW5t()(10kHz100kHz)(GTO,GTR,MCT,IGBT,MOSFET,BSITSITH)IGBTIGBTGTRMOSFET1994IGBT1200kW/50kHz199330-600kW50-100kHz199650kW/50kHzIGBT[7]19IPS30kHz50kHz250kW100kW/20kHzIGBT[8]200150kW/20kHzIGBT(100kHz)IGBT[9-11]MOSFETMOSFET600kW/400kHz[12]1989MOSFET480kW/50200kHzInductoElphiMOSFET1000kW/15600kHz[13](SIT)801000kW/200kHz400kW/400kHzSITMOSFET9020kW/300kHzMOSFET199675kW/200kHzSITSIT(SITH)MOSFETIGBTSIT1.3.2(1)[14]IGBTSITMOSFET10(MCT,IGCTSIC)(2)AC/DCDC/DC(3)(4)(5)111(6)[15]()1.4DSPCPLDl050kHz30kWDSPCPLD/(1)(2)(3)DSP(4)DSPPWMCPLD(5)DSPCPLD(6)DSP(7)DSPCPLD2IGBT122IGBT2.1IGBTIGBTIGBTIGBT[16-18]IGBTMOSFETMOSIGBT(1)(2)(3)MOSGTR100kHz(4)[19]2.1.1IGBTIGBT2-1IGBTMOSEFTPMOSEFTPNPNMOSMOSFETN+N-J1P+N-13(a)IGBT(b)(c)2-lIGBTFig.2-1Thebasicframe,theequivalentcircuitandcircuitsymbolofIGBT(a)TheinnerstructureofIGBT,(b)Theequivalentcircuit,(c)CircuitsymbolP+NIGBT2-1(b)MOSFETMOSFETPNPR()IGBTMOSFETIGBTUGEUGEUGE(th)(UCE0)MOSFETIGBTRNIGBTIGBTMOSFETIGBTPNPNMOSFETIGBTNIGBTN-IGBT2-1(c)PIGBTP-IGBT2-1(c)NIGBT2.1.2IGBT2.1.2.12-2(a)IGBTIcUGEMOSFETUGE(th)IGBTUGE(th)2IGBT1415mV+25UGE(th)26V(a)(b)2-2IGBTFig.2-2ThetransfercharacteristicandoutputcharacteristicofIGBT(a)Thetransfercharacteristic,(b)Theoutputcharacteristic2-2(b)IGBTUGEIcUCEGTRIGBTUGEGTRIBIGBTGTRUGEUGE(th)IGBTUGEUGE(th)IGBTIGBTUGE0IGBTIGBT2.1.2.22-3IGBTIGBTIGBTMOSFETIGBTMOSFETIGBTUGE=-UGE2ic=0UCE=UCEMIGBT-UGE2UGE1td(on)UGEUGE(th)td(on)Ic15tirICICMtirtirUCEtvfUCE(on)IGBTton=td(on)+tir+tvfIGBTUGE1-UGE2tsUGEUGE(th)tstsUCEtvrtvrtvrtifICIGBTIGBTtoff=ts+tvr+tifIGBTjτRGCiE(RGCiEIGBT)RGjτUGE(th)iCjτRGtirEon2-3IGBTFig.2-3IGBTwaveforma