HENEECKE技术规格以及安装要求

1Systemconfigurationandspec系统配置和技术指标1.Systemconfiguration2.TechnicalSpecificationWaferMeasuring-andSortingSystemHe-WI-04技术指标：硅片测量和分选系统He-WI-04Objectives目的Thesystemisdesignedforthefinalinspectionandsortingofsolarwafers.Itcanmeasurerectangularwafers(monoandmulti)between125mmand156mminlength.Thethicknessofthewafersshallbe0.12mm–0.4mm.Afterareconstructionthesystemcanalsomeasurewaferswiththedimension210mmx210mm.Thefollowingaccuracyisspecifiedforwaferswiththedimensionof156mmx156mm.该系统的功能是对硅片进行最终的测试和分选。其可以测量方形的单晶和多晶硅片,尺寸125毫米和156毫米之间，硅片的厚度在0.12毫米和0.4毫米之间。在重新配置系统后,其也可以测试210毫米x210毫米的硅片。以下的指标是针对156毫米x156毫米的硅片。GeneralEquipmentCriteria:设备总体要求：Applicationforwafersize125x125or156x156ofMulti/Monoproduct;Orthemachinealsoavailableforthesizeof210X210afterre-configuration;可以用125x125至156x156多种尺寸的单晶或多晶硅片，或者在重新配置系统后测试210X210的硅片。Throughput:产量为≥3,000pcs/hBreakagerate碎片率：≤0.2%Uptime设备开机率：≥95%Cassettetype片架类型：25pcsor100pcsMeasuringSystem测量系统Themeasuringsystemconsistsofthefollowingmodules:该测量系统有以下模块组成:2Thicknessmeasuringsystem厚度测量模块Edgedefectdetectionmeasuringsystem边缘缺陷测试模块ExternalDimensionsandPerpendicularmeasurementsystem外形尺寸测量模块SoriMeasurementSystem(neartoWarp,Bow)翘曲度测量模块Sawmarkmeasurementsystem线痕测量模块Centralprocessingunit中央处理单元Option:NonVisualCrackdetection–MicroCrackandSICinclusion可选:微裂痕和碳化硅杂质测试模块Option:Staindetection可选:污点测试模块Option:Resistivity可选:电阻率测试模块2.1Thicknessmeasuringsystem2.1厚度测量模块Thethicknessismeasuredwithcapacitivesensorsforthreedifferentsizesofwafer.Onpassingthroughthesystem,thewaferthicknessandTTVismeasuredatdifferentpointsalongthreemeasuringtracks.Thedatawillbetransferredtothecentralcomputer.硅片的厚度是通过电容传感器测试硅片上三处不同路径获得的。硅片通过系统时,沿着硅片中间,左侧,右侧的三处不同路径，厚度和厚度变化被持续地取点进行测试。数据会传到电脑的中央处理器。Thethicknessmeasurementtracksarearrangedasfollows:厚度测量路径是如以下安排的:Thesystemconsistsof3measuringsensorspairs,1middlelineandtwolinesforthedifferentsizes.Thetwoouterlinesaremountedonanautomatedaxis,sothatthesystemcanadjusttheouterlinesforeachdimensionbetween125mm-210mmautomatically.该系统配有三副测试传感器,硅片的中间，左侧，和右侧。左右两侧的传感器安装在自动的轴上。这样传感器器可以根据硅片的不同尺寸125毫米到210毫米,调整左右传感器的位置。Thesensorsareconnectedtoacontrolcabinetwitha19''plug-inmeasuringmodule.Thismodulecontainsthesignalprocessorsneededtotransfertheanalogmeasurementdatatothemeasuringcomputer.A16-BitA/Dtransformercardtransmitsthedatatothecomputerwithafrequencyof1KHz,whichthendetermineswaferthicknessandTTV.该传感器联接到一个带有测试模块的控制盒上。该模块包含有信号处理器,该处理器可以将模拟测量数据传送到测量电脑上去。一个16-Bit的模拟数字交换器将数据传给电脑,频率为1KHZ,其计算硅片的厚度和TTV.3Duringthethroughputofthewafereachmeasuringtracktakesupto500measuredpoints.BasedonthesevaluesameanandtheTTVwillbegenerated.在一个硅片的厚度和TTV的测量过程中,沿着每一测试路径,测试取点多达500个点。依据这些数值,就可以获得平均值和TTV数据。Thesensorpairinthemiddlestartsthedetectionprocessofthethickness/TTVwithadistanceof2.5mmbetweenwaferedge–wafermiddleofthewafertopandbottomedge.Theoutersensorsstartthedetectionwithadistanceof6mm.中间的传感器在距离硅片边缘2.5毫米地方开始进行测试。左右的传感器在距离硅片边缘6毫米地方开始进行测试。Specifications:技术指标:Pathsensors:路径传感器:Activediameteroutersensors:5.5mmActivediameterinnersensors:1.5mmx8.9mmMeasurementrange:1.0mmMeasurementfrequency:1KHzMeasurementresolution:1µm左右传感器的测量直径为:5.5毫米中间传感器的测量直径为:1.5毫米x8.9毫米测量区间:1.0毫米测量频率:1KHz分辨率:1微米Wehighlightthatthewaferspositionedinthecarrier,mustnotbeelectrostaticchargedasthismaycausemismeasurements.请注意在传送带上的硅片不可以带静电，否则测量的数据会不准确。.2.2EdgedefectdetectionandExternaldimension/perpendicularitymeasuringsystem2.2边缘缺陷测试和外形尺寸测试系统Chipping,v-breakoutandcracksaredetectedwithahigh-resolutionlinescanningcamera.Thecamerahasaresolutionof7,500pixels,whichcorrespondstoaresolutionof0.023mminavisualfieldof170mm,andisabletorecord4,000imagespersecond.Thisguaranteesaresolutionof0.5mminthedirectionofmotionataspeedof200mm/s.Henneckeusesaspecialilluminationtogetgoodcontrasts.Pleasenotethatonlycracksatthegluedsideandbackside(oppositetothegluedsite)canbedetected.崩边,破裂,裂痕是由高分辨率线扫描相机测试出来的。该相机的分辨率为7500pixels,其等于在170毫米的视场范围内0.023毫米的分辨率。其可以每一秒记录4000图像，其确保以每秒200毫米的速度沿着运动的方向0.5毫米的分辨率。4Hennecke采用特别的照明以得到一个好的对比。请注意只有在粘胶面和背面上的裂痕才可以被测出。Theresults–theposition,widthandbreadthofthedefect–aretransferredtothecentralcomputer.测量结果–损坏的位置,宽度和幅度–被传送到中央电脑上去。ThegeometricalfeaturesofthewaferaremeasuredwithahighresolutionCCD-matrixcamera(2000x2000pixel).Withthisprocedureedgedefectsaredetectedadditionallytothelinecamera.Withavisualfieldof200mmx200mmaresolutionof0.1mmisachieved.硅片的几何尺寸是用高分辨率的CCD-矩阵相机(2000x2000pixel)测量的。这样也会额外测量出边缘损坏。在200mmx200mm的视场范围内可以达到0.1mm的分辨率。SpecificationsGlueSide,backside(Foreedge/rearedge):技术指标-沾胶面，背面(前边缘/后边缘):V-breakout:破裂:AV-breakoutisdamageofthewaferedge.Thedamagecanbeseenintheprojectionofthewafer.AV-breakoutisdetecteddownto0.1mmindepthand0.1mminwidth.Theresultofthemeasurement–themaximumdepthandthewidthatwhichthev-breakoutwas0.1mmdeep–aretransferredtothecomputer.破裂是硅片边缘上的破损。破裂可以在硅片的投影中看见。可以测量到的最小的破裂可以是深度为0.1毫米，宽度为0.1毫米。测量的数据–大于0.1毫米的最大深度，最大宽度–被传送给中央电脑。.Chipping:崩边:Chippingisdamageonthesurfaceofthewafer,whichexposesashinysurface.崩边是硅片表面的损伤，其暴露出一个闪光的面。Thepictureofthecamerawillshowthisasablackpoint,becausethesurfaceisilluminatedunderanangleof45°.Thedistancebetweenlig