利用FIB制备TEM样品简明教程

RecipeofmakingTEMsample9/15/2014①DepositionE-beamdepositon(10minutes)Voltage(kV)Current(nA)Size(μm)X*Y*ZStagedegree(°)SiO251.610*2*50Pt51.610*2*10•Ion-beamdeposion(15minutes)Voltage(kV)CurrentSize(μm)X*Y*ZStagedegree(°)Pt2081pA10*2*0.752Pt300.1nA10*2*0.752•②U-cut(25minutes)Voltage(kV)Current(nA)Size(μm)X*Y*ZStagedegree(°)Regularcross-section30515*4*253(frontside)Regularcross-section30515*8*451(backside)Cleancross-section30115*y*253(frontside)Cleancross-section30115*y*251(backside)U-cut3010•③Lift-out(20minutes)Voltage(kV)CurrentSize(μm)X*Y*ZStagedegree(°)Bondprobewithsample3050pA0Cuttoreleasesample301nA0Bondsamplewithgrid3050pA0Cuttheprobebond301nA0•Thindownto600nmVoltage(kV)Current(nA)Size(μm)X*Y*ZStagedegree(°)Cleancross-section300.58*y*253(frontside)Cleancross-section300.58*y*251(backside)Forreducingtheredeposion,thefrontandbacksidesneedtobethinnedrepeatedly.Everythinningtimeshalllessthanoneminute,thenmovetotheothersidetowork.④Thindown(10minutes)Voltage(kV)Current(pA)Size(μm)X*Y*ZStagedegree(°)Cleancross-section20378*y*253(frontside)Cleancross-section20378*y*251(backside)Thindownto200nm(15minutes)Voltage(kV)Current(pA)Size(μm)X*Y*ZStagedegree(°)Cleancross-section20378*y*353(frontside)Cleancross-section20378*y*351(backside)Thindowntolessthan100nm(15minutes)Voltage(kV)Current(pA)Size(μm)X*Y*ZStagedegree(°)Cleancross-section10238*y*353(frontside)Cleancross-section10238*y*351(backside)Cleancross-section5298*y*353(frontside)Cleancross-section5298*y*351(backside)FinalThindown(10minutes)