晶体硅太阳电池制备工艺进展

--ENERGYENGINEERING2005:205-03-04:(50376067):(1980-),,,1,1,2,1(1.,510640;2.,510275):晶体硅太阳电池是目前应用最广技术最为成熟的太阳电池,以晶体硅太阳电池生产流程为基础,主要从降低生产成本和提高电池转换效率方面出发,介绍了太阳电池制备工艺的最新进展,并对各种制备工艺作出了评价和展望:硅太阳电池;降低成本;提高效率;制备工艺:TM914.4:A:1004-3950(2005)03-0020-05ProgressesinthepreparationofcrystallinesiliconsolarcellsGUOZhiqiu1,HUYunfei1,SHENHui2,LIUZhengyi1(1.CollegeofMechanicalEngineering,SouthChinaUniversityofTechnology,Guangzhou510640,China;2.CollegeofPhysicScience&TechnologyEngineering,SunYatSunUniversity,Guangzhou510275,China)Abstract:Amongallsolarcells,cSisolarcellisthemostwidelyusedandtechnicallymatured.Basedontheproductionprocess,thisarticleintroducesthelatestmanufacturetechniquesofcSisolarcells,andfocusesonthetechniquesreducethecostandraisingofefficiency,Italsoappraisedallthetechniques.Keywords:c-Sisolarcel;lreducingthecost;raisingofefficiency;preparingtechniques0,1839Becqueral,1954Chapin4.5%,35%,,,,,,,,,,,11,1:pn,,2005--:,22.1单晶硅和多晶硅,PERL[1],,,,,,,1/20[2],,20.3%,13%~16%,,2.2硅带1/W,,,2/W,,[3]EFG[4],10cm4m,30mm/min,,8.25%,0.8/W[5]EFG,,,,2.3层剥离技术,[6]:,,,,12m12.5%[7],33.1表面腐蚀10~20m,,80~90!20%~30%NaOHKOH,,,,,,3.2表面织构,,()[8]VV,35∀V,,,,,,[9][10],,,,0.4%,,-!-ENERGYENGINEERING20054,POCl3,,,n+/n,,,n+,,,,pn[11]~[13]:,n+,,,,,22pn,,[14],,MIS,pn+,[15]535%,,,,,SiO2ZnSSiNxSiO2,SiO2SiO2,Si-SiO2,,(SiNx)[16],,Na[17][18],SiO2,,,Al577!Al-Si,,Al-Si,,,,,,p+,(20m),,,[19],,1%~4%,,PERL[1]6,,[2],,6.1激光刻槽埋栅,,2005-∀-[20][21],,,(20~25m),,,NiCu,6.2丝网印刷,,,,(150~200m)[22]6.3透明电极,,,10%,50%[23],,,[24]ZnOx,,,6.4整体背电极[25],pn,pn,[26][27],pn,7,,,,24.7%,1/W,,,:[1]JZhao,AWang,andMAGreen,24.5%efficiencysiliconPERTcellsonMCZsubstratesand24.7%efficiencysiliconPERLcellsonFZsubstrates[J].ProgressinPhotovoltaics1999,(7):471.[2]MAGreen.Siliconsolarcells:advancedprinciples&practice[A].CenterforPhotovoltaicDevicesandSystems[C].Sydney,1995.[3]QBan,HShen,XWang,etal.Studyofsspribbonaspolycrystallinesiliconthinfilmsolarcells'substratematerialpreparationandperformance[A].Proceedingsofthethirdworldconferenceonphotovoltaicenergyconversion[C].2003.12821284.[4]ROBel,lJPKaleis.Growthofsiliconsheetsforphotovoltaicapplications[J].JMaterRes,1998,13:27322739.[5]LiangZongcun,etal.CharacterisationofDirectEpitaxialSiliconThinFilmSolarCellsonaLowCostSubstrate[J].SolarEnergyMaterials&SolarCells,2003,80:181193[6]CSSolank,iRRBilyalov,JPoortmans,etal.Poroussiliconlayertransferprocessesforsolarcells[J].SolarEnergyMaterials&SolarCells,2004,83:101113.[7]RBrende,letal.JApplPhys,2001,40:4431.[8]CGerhards,CMarckmann,RTolle,etal.MechanicallyVtexturedlowcostmulticrystallinesiliconsolarcellswithanovelprintingmetallization[J].IEEETransactiononElectronDevices,1997:4346.[9]PManshanden,ARBurgers,WANositschka,etal.SiliconsolarcellstexturedbylowdamageRIEwithnaturallithography[J].IEEETransactiononElectronDevices,2002:324327.[10]DouglasSRuby,SaleemH.RIEtexturingofindustrialmulticrystallinesiliconsolarcells[J].IEEETransactiononElectronDevices,2002:146149.[11]AMoralesAcevado.Optimizationofsurfaceimpurity-#-ENERGYENGINEERING2005concentrationofpassivatedemittersolarcells[J].JApplPhys,1968,60:815819.[12]MWol.fTheinfluenceofheavydopingeffectsonsiliconsolarcellsperformance[J].SolarCells,1986,17:5363.[13]AMoralesAcevado.Theoreticalstudyofthinandthickemittersiliconsolarcells[J].JApplPhys,1991,70:33453347.[14]SPeters,JYLee,CBalli,fetal.Rapidthermalprocessing:acomprehensiveclassificationofsiliconmaterials[J].IEEETransactiononElectronDevices,2002:214217.[15]RHeze.lAreviewofrecentadvancesinMISsolarcells[A].Proc6thWorkshopRoleofImpuritiesandDefectsSiliconDevProc[C].1996.139153.[16]GuillermoSantana1,ArturoMoralesAcevedo.OptimizationofPECVDSiN:Hlmsforsiliconsolarcells[J].SolarEnergyMaterials&SolarCells,2000,60:135142[17]KShirasawa,HTakahasash,iYInomata,etal.Largeareahighefficiencymulticrystallinesiliconsolarcells[A].Proc12thEuroPVSolarEnergyConf[C].1994.757760.[18]JSzlufcik,KDeClercq,PDeSchepper,etal.ImprovementinmulticrystallinesiliconsolarcellsafterthermaltreatmentofPECVDsiliconnitrideARcoating[A].Proc12thEuroPVSolarEnergyConf[C].1994.10181021.[19]TBrammer,JHupkes,MKrause,etal.LocallyContactedThinfilmsolarcells[A].Proceedingsofthethirdworldconferenceonphotovoltaicenergyconversion[C].2003.176179.[20]RPreu,ESchneidstrlkhner,AGrohe,etal.Laserfiredcontactstransferofasimplehighefficienceprocessschemetoindustrialproduction[J].IEEETransactiononElectronDevices,2002:130133.[21]SWenham.Buriedcontactsiliconsolarcells[J].ProgressinPV,1993,(1):310.[22]MohamedM.Hilal,iAjeetRohatg,iSallyAsher.DevelopmentofScreenPrintedSiliconSolarCellsWithHighFillFactorson100/sqEmitters[J].IEEETransactiononElectronDevices,2004,(6)51:948955.[23]HenkKaan,TjerkReijenga.PhotovoltaicsinanArchitecturalContext[J].ProgPhotovolt:ResAppl,2004,12:395408.[24]JCLee,KHKang,SKKim,etal.DirectdepositionoftexturedZnO:AlTCOfilmsbyRFsputteringmethodforthinfilmsolarcells[J].IEEETransactiononElectronDevices,2002:12861289.[25]Jiunhuaguo,JeffreyECotter.Interdigitatedbacksideburiedsolarcells[A].Proceedingofthethirdworldconferenceonphotovoltaicenergyconversion[C].2003.14631466.[