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SUPEROHMINDEXFORSPECIFICATION1....INSTRUCTION--------------------------------------12....RATING----------------------------------------------------13....DIMENTIONFORCHIP------------------------24....STRUCTURE-------------------------------------25....MARKING--------------------------------------------3----46....CHARACTERISTICS--------------------------5----67....PACKING------------------------------------7----8-1-SUPEROHMCHIPRESISTORSFILENO.:1.INSTRUCTION:THISSHEETISTHESTATEMENTOFTHETHICKFILMCHIPRESISTORSSPECIFICATIONTHATROYALOHM’SPRODUCTIONSCANMEET.2.RATING:TYPE0402060308051206121020102512POWERRATING1/16W1/10W1/8W1/4W1/3W3/4W1WMAX.WORKINGVOLTAGE50V50V150V200V200V200V200VMAX.OVERLOADVOLTAGE100V100V300V400V400V400V400VDIELECTRICWITHSTANDINGVOLTAGE0402:100V;0603:300V;其余:500V±1%0402:100Ω--1MΩ;其余0.1Ω--10MΩRESISTANCERANGE±5%0402:100Ω--1MΩ;其余0.1Ω--10MΩTOLERANCE±1%,±5%RATEDAMBIENTTEMP.70℃TEMP.RANGE-55℃---+155℃2.1POWERRATING:RESISTORSSHALLHAVEAPOWERRATINGBASEDONCONTINUOUSLOADOPERATIONATANAMBIENTTEMPERATUREOF700C.FORTEMPERATUREINEXCESSOF700C,THELOADSHALLBEDERATEASSHOWNINFIGURE1.FIGURE12.2VOLTAGERATING:RESISTORSSHALLHAVEARATEDDIRECT-CURRENT(DC)CONTINUOUSWORKINGVOLTAGEORANAPPROXIMATESINE-WAVEROOT-MEAN-SQUARE(RMS)ALTERNATING-CURRENT(AC)CONTINUOUSWORKINGVOLTAGEATCOMMERCIAL-LINEFREQUENCYANDWAVEFORMCORRESPONDINGTOTHEPOWERRATING,ASDETERMINEDFROMTHEFOLLOWINGFORMULA:RCWV=√P×RWHERE:RCWV=RATEDDCORRMSACCONTINUOUSWORKINGVOLTAGEATCOMMERCIAL-LINEFREQUENCYANDWAVEFORM(VOLT.)P=POWERRATING(WATT.)R=NOMINALRESISTANCE(OHM)INNOCASESHALLTHERATEDDCORRMSACCONTINUOUSWORKINGVOLTAGEBEGREATERTHANTHEAPPLICABLEMAXIMUMVALUE.-2-THICKFILMCHIPRESISTORS3.DIMENSIONFORCHIP:DIMENSION:mmTYPELWHl1l204021.00±0.10+0.050.50-0.050.35±0.050.20±0.100.25±0.1006031.60±0.10+0.150.80-0.100.45±0.100.30±0.200.30±0.2008052.00±0.15+0.151.25-0.100.55±0.100.40±0.200.40±0.2012063.10±0.15+0.151.55-0.100.55±0.100.45±0.200.45±0.2012103.10±0.15+0.152.60-0.100.55±0.100.50±0.250.50±0.2020105.00±0.15+0.152.50-0.100.55±0.100.60±0.250.50±0.2025126.35±0.15+0.153.20-0.100.55±0.100.60±0.200.50±0.204.STRUCTURE:1:HIGHPURITYALUMINASUBSTRATE(96%AL2O3、0.3±0.1%CaO、1.0±0.3%MgO、2..1±0.05%SiO2)2,3:PROTECTIVECOVERING4:RESISTIVECOVERING5:TERMINATION(INNER)Ag/Pd6:TERMINATION(BETWEEN)NiPLATING7:TERMINATION(OUTER)SnPLATING-3-THICKFILMCHIPRESISTORS5.MARKING:(1)FOR0402SIZE.DUETOTHEVERYSMALLSIZEOFTHERESISTOR’SBODY,THEREISNOMARKINGONTHEBODY.(2)±5%TOLERANCE:THEFIRSTTWODIGITSARESIGNIFICANTFIGUTRESOFRESISTANCEANDTHETHIRDDENOTESNUMBEROFZEROSFOLLOWINGEXAMPLE:33000→33KΩ(3)±5%TOLERANCE:BELOW10ΩSHOWASFOLLOWINGEXAMPLE:2.2Ω(4)±1%TOLERANCE:4DIGITS,FIRSTTHREEDIGITSARESIGNIFICANT,FORTHDIGITISNUMBEROFZEROS.LETTERRISDECIMALPOINT.EXAMPLE:2700→2.7KΩ10.5Ω(5)STANDARDE-96SERIESVALUES(±1%TOLERANCE)OF0603SIZE.DUETHTHESMALLSIZEOFTHERESISTOR’SBODY,3DIGITSMARKINGWILLBEUSEDTOINDICATETHEACCUATERESISTANCEVAUEBYUSINGTHEFOLLOWINGMULTIPLIER&RESISTANCECODE.MULTIPLIERCODE:CODEABCDEFGHXYZMULTIPLIER10010110210310410510610710-110-210-3CODINGFORMULAFIRSTTWODIGITS------------RESISTANCECODETHIRDDIGIT-------------------MULTIPLIERCODEEXAMPLE:1.96KΩ=196×101Ω=29B12.4Ω=124×10-1Ω=10X-4-THICKFILMCHIPRESISTORSSTANDARDE-96VALUESAND0603RESISTANCECODEΩVALUECODEΩVALUECODEΩVALUECODEΩVALUECODE100011782531649562731020218226324505767410503187273325159075107041912834052604761100519629348536197711306200303575463478115072053136555649791180821032374566658012109215333835768181124102213439258698821271122635402597158313012232364126073284133132373742261750851371424338432627688614015249394426378787143162554045364806881471726141464658258915018267424756684590154192744348767866911582028044499688879216221287455116990993165222944652370931941692330147536719539517424309485497297696-5-THICKFILMCHIPRESISTORS6.CHARACTERISTICS:CHARACTERISTICLIMITSTESTMETHOD(JIS-C-5201/5202)±1%10Ω---100Ω≤±200PPM/°C101Ω---1MΩ≤±100PPM/°CTEMPERATURECOEFFICIENT±5%1Ω---10Ω≤±400PPM/°C11Ω---10MΩ≤±200PPM/°C5.2NATURALRESISTANCECHANGEPERTEMP.DEGREECENTIGRADER2-R1×106(PPM/℃)R1(T2-T1)R1:RESISTANCEVALUEATROOMTEMP.(T1)R2:RESISTANCEVALUEATROOMTEMP.+100℃(T2)TESTPATTERN:ROOMTEMP.,ROOMTEMP.+100℃±1%±(1%+0.1Ω)MAX.SHORT-TIMEOVERLOAD±5%±(2%+0.1Ω)MAX5.5PERMANENTRESISTANCECHANGEAFTERTHEAPPLICATIONOF2.5TIMESRCWVFOR5SECONDS.INSULATIONRESISTANCE1,000MΩORMORE5.6APPLY500VDCBETWEENPROTECTIVECOATINGANDTERMINATIONFOR1MINUTE,THENMEASURE.DIELECTRICWITHSTANDINGVOLTAGENOEVIDENCEOFFLASHOVERMECHANICALDAMAGE,ARCINGORINSULATIONBREAKDOWN.5.7APPLY500VDCBETWEENPROTECTIVECOATINGANDTERMINATIONFOR1MINUTETERMINALBENDING±(1%+0.05Ω)MAX6.1.4TWISTOFTESTBOARD:Y/X=3/90mmFOR10SECONDSSOLDERINGHEATRESISTANCECHANGERATEIS:±(1%+0.05Ω)MAX6.4DIPTHERESISTORINTOASOLDERBATHHAVINGATEMPERATUEROF260°C±5°CANDHOLDITFOR10±1SECONDS.-6-THICKFILMCHIPRESISTORSCHARACTERISTICLIMITSTESTMETHOD(JIS-C-5201/5202)7.4RESISTANCECHANGEAFTERCONTINUOUSFIVECYCLESFORDUTYCYCLESPECIFIEDBELOW:STEPTEMPERATURETIME±1%±(0.5%+0.05Ω)MAX1-55℃±3℃30MINS2ROOMTEMP.10---15MINS3+155℃±3℃30MINSTEMPERATURECYCLING±5%±(1.0%+0.05Ω)MAX.4ROOMTEMP.10---15MINSSOLDERABILITY95%COVERAGEMIN.6.5TESTTEMPERATUREOF
本文标题:贴片物料规格书-superohm
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