IRFP360L

IRFP360LCHEXFET®PowerMOSFETPD-9.1230Revision0VDSS=400VRDS(on)=0.20ΩID=23AUltraLowGateChargeReducedGateDriveRequirementEnhanced30VVgsRatingReducedCiss,Coss,CrssIsolatedCentralMountingHoleDynamicdv/dtRatedRepetitiveAvalancheRatedAbsoluteMaximumRatingsParameterMax.UnitsID@TC=25°CContinuousDrainCurrent,VGS@10V23ID@TC=100°CContinuousDrainCurrent,VGS@10V14AIDMPulsedDrainCurrent92PD@TC=25°CPowerDissipation280WLinearDeratingFactor2.2W/°CVGSGate-to-SourceVoltage±30VEASSinglePulseAvalancheEnergy1200mJIARAvalancheCurrent23AEARRepetitiveAvalancheEnergy28mJdv/dtPeakDiodeRecoverydv/dt4.0V/nsTJOperatingJunctionand-55to+150TSTGStorageTemperatureRange°CSolderingTemperature,for10seconds300(1.6mmfromcase)Mountingtorque,6-32orM3screw.10lbf•in(1.1N•m)ParameterMin.Typ.Max.UnitsRθJCJunction-to-Case––––––––0.45RθCSCase-to-Sink,Flat,GreasedSurface––––0.24––––°C/WRθJAJunction-to-Ambient––––––––40ThermalResistanceDescriptionThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.ThesedeviceimprovementscombinedwiththeprovenruggednessandreliabilityofHEXFETsofferthedesigneranewstandardinpowertransistorsforswitchingapplications.TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole.IRFP360LCNotes:ParameterMin.Typ.Max.UnitsConditionsISContinuousSourceCurrentMOSFETsymbol(BodyDiode)showingtheISMPulsedSourceCurrentintegralreverse(BodyDiode)p-njunctiondiode.VSDDiodeForwardVoltage––––––1.8VTJ=25°C,IS=23A,VGS=0VtrrReverseRecoveryTime–––400600nsTJ=25°C,IF=23AQrrReverseRecoveryCharge–––5.78.6µCdi/dt=100A/µstonForwardTurn-OnTimeRepetitiverating;pulsewidthlimitedbymax.junctiontemperature.(Seefig.11)VDD=25V,startingTJ=25°C,L=4.0mHRG=25Ω,IAS=23A.(SeeFigure12)ISD≤23A,di/dt≤170A/µs,VDD≤V(BR)DSS,TJ≤150°CPulsewidth≤300µs;dutycycle≤2%.Source-DrainRatingsandCharacteristicsElectricalCharacteristics@TJ=25°C(unlessotherwisespecified)ParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-SourceBreakdownVoltage400––––––VVGS=0V,ID=250µAΔV(BR)DSS/ΔTJBreakdownVoltageTemp.Coefficient–––0.49–––V/°CReferenceto25°C,ID=1mARDS(ON)StaticDrain-to-SourceOn-Resistance––––––0.20ΩVGS=10V,ID=14AVGS(th)GateThresholdVoltage2.0–––4.0VVDS=VGS,ID=250µAgfsForwardTransconductance13––––––SVDS=50V,ID=14A––––––25VDS=400V,VGS=0V––––––250VDS=320V,VGS=0V,TJ=125°CGate-to-SourceForwardLeakage––––––100VGS=20VGate-to-SourceReverseLeakage––––––-100VGS=-20VQgTotalGateCharge––––––110ID=23AQgsGate-to-SourceCharge––––––28nCVDS=320VQgdGate-to-Drain(Miller)Charge––––––45VGS=10V,SeeFig.6and13td(on)Turn-OnDelayTime–––16–––VDD=200VtrRiseTime–––75–––ID=23Atd(off)Turn-OffDelayTime–––42–––RG=4.3ΩtfFallTime–––50–––RD=7.9Ω,SeeFig.10Betweenlead,6mm(0.25in.)frompackageandcenterofdiecontactCissInputCapacitance–––3400–––VGS=0VCossOutputCapacitance–––540–––pFVDS=25VCrssReverseTransferCapacitance–––42–––ƒ=1.0MHz,SeeFig.5Intrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)––––––92––––––23AnHLDInternalDrainInductance–––5.0–––LSInternalSourceInductance–––13–––IDSSDrain-to-SourceLeakageCurrentIGSSnsµAnAFig3.TypicalTransferCharacteristicsFig4.NormalizedOn-ResistanceVs.TemperatureIRFP360LCFig1.TypicalOutputCharacteristics,TC=25oCFig2.TypicalOutputCharacteristics,TC=150oC0.111010010000.11101004.5VVGSTOP15V10V8.0V7.0V6.0V5.5V5.0VBOTTOM4.5VI,Drain-to-SourceCurrent(A)DV,Drain-to-SourceVoltage(V)DS20µsPULSEWIDTHT=25°CC0.111010010000.11101004.5VVGSTOP15V10V8.0V7.0V6.0V5.5V5.0VBOTTOM4.5VI,Drain-to-SourceCurrent(A)DV,Drain-to-SourceVoltage(V)DS20µsPULSEWIDTHT=150°CC0.1110100100045678910T=25°CT=150°CJJGSV,Gate-to-SourceVoltage(V)DI,Drain-to-SourceCurrent(A)V=50V20µsPULSEWIDTH DS0.00.51.01.52.02.53.0-60-40-20020406080100120140160V=10VGSJT,JunctionTemperature(°C)R,Drain-to-SourceOnResistanceDS(on)(Normalized) I=23ADIRFP360LCFig7.TypicalSource-DrainDiodeForwardVoltageFig8.MaximumSafeOperatingAreaFig5.TypicalCapacitanceVs.Drain-to-SourceVoltageFig6.TypicalGateChargeVs.Gate-to-SourceVoltage0100020003000400050006000110100C,Capacitance(pF)DSV,Drain-to-SourceVoltage(V)V=0V,f=1MHzC=C+C,CSHORTEDC=CC=C+CGSissgsgddsrssgdossdsgdC issC ossC rss0481216200306090120Q,TotalGateCharge(nC)GFORTESTCIRCUITSEEFIGURE13V,Gate-to-SourceVoltage(V)GS V=320V V=200VV=80VDSDSDSI=23AD11010000.40.81.21.62T=25°CT=150°CJJV=0V GSV,Source-to-DrainVoltage(V)I,ReverseDrainCurrent(A)SDSD11010010001101001000V,Drain-to-SourceVoltage(V)DSI,DrainCurrent(A)OPERATIONINTHISAREALIMITEDBYRDDS(on)10µs100µs1ms10ms T=25°C T=150°CSinglePulseCJIRFP360LCFig10a.SwitchingTimeTestCircuitVDS10VPulseWidth≤1µsDutyFactor≤0.1%Fig9.MaximumDrainCurrentVs.CaseTemperatureFig10b.SwitchingTimeWaveformsRDVGSVDDRGD.U.T.Fig11.MaximumEffectiveTransientThermalImpedance,Junction-to-Case0510152025255075100125150T,CaseTemperature(°C)CI,DrainCurrent(Amps)D0.0010.010.110.0