国立成功大学航空太空工程研究所硕士论文

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iAbstractSubject:FlowandHeatTransferinaCylindricalChamberwithaHotPlateStudent:M.C.HuangAdvisor:C.Y.WangInordertocarryoutnextprocess,sometimeswemustcooltheproductstoaspecifictemperatureafterheatingprocessinsemiconductormanufacture.Thispaperistoaimedatgascooling.Thechamberisacylindricalone,andthetemper-atureofchamberwallis373K.Thenputahotplatewhichtemperature,diameterandthicknessare1300K,300mmand0.7mminthebottomofchamber.Inthewallofchamberhasainletandaoutlet.Incoolingprocess,themaincoolinggasisnitrogen,andthetemperatureis300K.Firstweconsiderthesituationwithnocoolinggasenteringintothechamber,thenconsiderthesituationofdifferentinletvelocity,differentrotatingspeedofhotplate,differentheightofinletandangle,separately.Thendiscusstheircoolingrateandtemperatureuniformityofhotplate.Fromtheresultofthispaper,wecanobtainthat,whenincreasingtheinletvelocitycanincreasethecoolingrateofhotplate.Whenthevelocityis10m/s,thecoolingratecanreach9.12K/s.Andwealsofindthat,whenincreasingtherotatingspeedofhotplatecanincreasethecoolingrate,andimprovethetemperatureuni-formity.Thenwemovetheinlettotheplacenearthehotplate,thiscanincreasethecoolingrate.Ifwechangetheangleofinlet,canalsoimprovethetemperatureuniformity.ii_áû˝Fs'0ÿ¬ 7,Ê¥sqFQ§ƒ-=ØÖ7
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