MOSFET开关损耗的计算

MOSFET损耗的计算颜色部分需要自己定义1.定义已知量驱动电压：Vcc12V:=工作频率：Fsw330KHz:=MOSFET开通时的电压：Vds_open48V:=MOSFET关断时的电压：Vds_close48V:=MOSFET开通时的电流：Ids_open17A:=MOSFET关断时的电流：Ids_close20A:=MOSFET驱动开通电阻：Ropen14.7Ω:=MOSFET驱动关断电阻：Rclose4.7Ω:=驱动输出电流的能力：Iic_open3A:=驱动吸收电流的能力：Iic_close3A:=流过mosfET的有效值电流：Ids_rms14.3A:=2.选择MOSFET，定义MOSFET的参数TK10A60D驱动内阻：Rg0.54Ω⋅:=MOSFET导通电阻：Ron0.033Ω:=MOSFET门极开启电压：Vth3V:=MOSFET跨导：gfs6S:=MOSFET的输入电容：Ciss1220pF⋅:=MOSFET的输出电容：Coss295pF:=MOSET的米勒电容：Crss100pF:=3.MOSFET损耗计算3.1计算开通和关断的米勒平台电压Vsp_openVthIds_opengfs+5.833V=:=Vsp_closeVthIds_closegfs+6.333V=:=3.2计算mosfET管开通到米勒平台的时间T1T1_openRopenRg+()Ciss⋅ln11Vsp_openVcc-ln11VthVcc--⋅7.029ns⋅=:=T1_closeRcloseRg+()Ciss⋅ln11Vsp_closeVcc-ln11VthVcc--⋅2.957ns⋅=:=3.3计算mosfET米勒平台的驱动电流IthIopenVccVsp_open-RopenRg+0.405A=:=IcloseVsp_closeRcloseRg+1.209A=:=3.4理论输出电流与驱动实际能力对比此时必须和芯片的驱动能力比较，取较小的值。()Isp_openIopen0.405A=:=Isp_closeIclose1.209A=:=3.5计算米勒平台维持时间T2T2_openVds_openIopenRon⋅1.3⋅-()Crss⋅Isp_open11.858ns⋅=:=T2_closeVds_closeIcloseRon⋅1.3⋅-()Crss⋅Isp_close3.967ns⋅=:=3.6计算开通损耗和关断损耗Psw_open12Vds_open⋅Ids_open⋅Fsw⋅T1_openT2_open+()⋅2.543W=:=Psw_close12Vds_close⋅Ids_close⋅Fsw⋅T1_closeT2_close+()⋅1.097W=:=3.7计算MOSFET的导通损耗PconIds_rms2Ron⋅1.3⋅8.773W=:=3.8计算mosfET的总损耗PtotalPsw_openPsw_close+Pcon+12.412W=:=