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©1994-2009ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:;;;HCNR201:TN151:B:1006-6977(2003)02-0024-021,,,,,,HPHCNR201HCNR201,2HCNR201HCNR201,:5%0.05%;DC1MHz;1013,0.4pF;5000V,1414V;015V/HCNR2011,LED,PD1PD2,LED,LEDLED,LEDPD1PD2,,3412,34,12LED,33.12HCNR201IPD1IPD2LEDIFIFLED,,N1IF,PD1PD2IPD1,IPD2IF:1HCNR201©1994-2009ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.=K1IF,IPD2=K2IFK1K2IPD1IPD2IF,HCNR201,,10.951.052,Vin=IPD1R1,Vout=IPD2R2,Vout/Vin=KR2/R1,,R2R14,,,,,,,,,,,,,,,,,,3,N1V1V2,,V2,V1,N2,N5,N4;,HCNR20134,,56RP1C2C3,,,,,N6,,RP25HCNR201/,(4-20mA/)1...2.HEWLETTPACKARD:2002-07-15:0302112HCNR2013
本文标题:高线性模拟光耦HCNR201原理及其在检测电路中的应用
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