IRF7341中文资料

HEXFET®PowerMOSFETPD-91703FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications.TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsandmultiple-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.Thepackageisdesignedforvaporphase,infrared,orwavesolderingtechniques.Powerdissipationofgreaterthan0.8WispossibleinatypicalPCBmountapplication.02/24/99DescriptionlGenerationVTechnologylUltraLowOn-ResistancelDualN-ChannelMosfetlSurfaceMountlAvailableinTape&ReellDynamicdv/dtRatinglFastSwitchingSO-8VDSS=55VRDS(on)=0.050ΩIRF7341@TC=25°CContinuousDrainCurrent,VGS@10V4.7ID@TC=70°CContinuousDrainCurrent,VGS@10V3.8AIDMPulsedDrainCurrent38PD@TC=25°CPowerDissipation2.0PD@TC=70°CPowerDissipation1.3LinearDeratingFactor0.016W/°CVGSGate-to-SourceVoltage±20VVGSMGate-to-SourceVoltageSinglePulsetp10μs30VEASSinglePulseAvalancheEnergy‚72dv/dtPeakDiodeRecoverydv/dtƒ5.0V/nsTJ,TSTGJunctionandStorageTemperatureRange-55to+150°CParameterTyp.Max.UnitsRθJAMaximumJunction-to-Ambient…–––62.5°C/WThermalResistanceAbsoluteMaximumRatingsWD1D1D2D2G1S2G2S1TopView81234567IRF73412(BR)DSSDrain-to-SourceBreakdownVoltage55––––––VVGS=0V,ID=250μAΔV(BR)DSS/ΔTJBreakdownVoltageTemp.Coefficient–––0.059–––V/°CReferenceto25°C,ID=1mA–––0.0430.050VGS=10V,ID=4.7A„–––0.0560.065VGS=4.5V,ID=3.8A„VGS(th)GateThresholdVoltage1.0––––––VVDS=VGS,ID=250μAgfsForwardTransconductance7.9––––––SVDS=10V,ID=4.5A––––––2.0VDS=55V,VGS=0V––––––25VDS=55V,VGS=0V,TJ=55°CGate-to-SourceForwardLeakage––––––-100VGS=-20VGate-to-SourceReverseLeakage––––––100VGS=20VQgTotalGateCharge–––2436ID=4.5AQgsGate-to-SourceCharge–––2.33.4nCVDS=44VQgdGate-to-Drain(Miller)Charge–––7.010VGS=10V,SeeFig.10„td(on)Turn-OnDelayTime–––8.312VDD=28VtrRiseTime–––3.24.8ID=1.0Atd(off)Turn-OffDelayTime–––3248RG=6.0ΩtfFallTime–––1320RD=16Ω,„CissInputCapacitance–––740–––VGS=0VCossOutputCapacitance–––190–––pFVDS=25VCrssReverseTransferCapacitance–––71–––ƒ=1.0MHz,SeeFig.9ElectricalCharacteristics@TJ=25°C(unlessotherwisespecified)IGSSμAΩRDS(on)StaticDrain-to-SourceOn-ResistanceIDSSDrain-to-SourceLeakageCurrentnAnsParameterMin.Typ.Max.UnitsConditionsISContinuousSourceCurrentMOSFETsymbol(BodyDiode)showingtheISMPulsedSourceCurrentintegralreverse(BodyDiode)p-njunctiondiode.VSDDiodeForwardVoltage––––––1.2VTJ=25°C,IS=2.0A,VGS=0VƒtrrReverseRecoveryTime–––6090nsTJ=25°C,IF=2.0AQrrReverseRecoveryCharge–––120170nCdi/dt=-100A/μsƒSource-DrainRatingsandCharacteristics––––––––––––382.0ARepetitiverating;pulsewidthlimitedbymax.junctiontemperature.(Seefig.11)ƒISD≤4.7A,di/dt≤220A/μs,VDD≤V(BR)DSS,TJ≤150°CNotes:‚StartingTJ=25°C,L=6.5mHRG=25Ω,IAS=4.7A.(SeeFigure8)„Pulsewidth≤300μs;dutycycle≤2%.…Whenmountedon1inchsquarecopperboard,t10secSDGIRF7341=25V20μsPULSEWIDTHDSV,Gate-to-SourceVoltage(V)I,Drain-to-SourceCurrent(A)GSDT=25CJ°T=150CJ°Fig3.TypicalTransferCharacteristicsFig2.TypicalOutputCharacteristicsFig1.TypicalOutputCharacteristicsFig4.TypicalSource-DrainDiodeForwardVoltage1101000.111010020μsPULSEWIDTHT=25CJ°TOPBOTTOMVGS15V12V10V8.0V6.0V4.0V3.5V3.0VV,Drain-to-SourceVoltage(V)I,Drain-to-SourceCurrent(A)DSD3.0V1101000.111010020μsPULSEWIDTHT=150CJ°TOPBOTTOMVGS15V12V10V8.0V6.0V4.0V3.5V3.0VV,Drain-to-SourceVoltage(V)I,Drain-to-SourceCurrent(A)DSD3.0V4.5V4.5V0.11101000.20.50.81.11.4V,Source-to-DrainVoltage(V)I,ReverseDrainCurrent(A)SDSDV=0VGST=150CJ°T=25CJ°IRF73414(A)DDS(on)VGS=10VVGS=4.5VFig5.NormalizedOn-ResistanceVs.TemperatureFig8.MaximumAvalancheEnergyVs.DrainCurrentFig6.TypicalOn-ResistanceVs.DrainCurrentFig7.TypicalOn-ResistanceVs.GateVoltage(Ω)RDS(on),Drain-to-SourceOnResistance(Ω)-60-40-200204060801001201401600.00.51.01.52.02.5T,JunctionTemperature(C)R,Drain-to-SourceOnResistance(Normalized)JDS(on)°V=I=GSD10V4.7A25507510012515004080120160200StartingT,JunctionTemperature(C)E,SinglePulseAvalancheEnergy(mJ)JAS°IDTOPBOTTOM2.1A3.8A4.7A0.040.060.080.100.120246810AGSV,Gate-to-SourceVoltage(V)I=4.7ADIRF7341(V)C,Capacitance(pF)DSVCCC====0V,CCCf=1MHz+C+CCSHORTEDGSissgsgd,dsrssgdossdsgdCissCossCrssFig11.MaximumEffectiveTransientThermalImpedance,Junction-to-AmbientFig10.TypicalGateChargeVs.Gate-to-SourceVoltageFig9.TypicalCapacitanceVs.Drain-to-SourceVoltage010203040048121620Q,TotalGateCharge(nC)V,Gate-to-SourceVoltage(V)GGSI=D4.5AV=12VDSV=30VDSV=48VDS0.11101000.00010.0010.010.1110100Notes:1.DutyfactorD=t/t2.PeakT=PxZ+T12JDMthJAAPttDM12t,RectangularPulseDuration(sec)ThermalR