本征击穿电场与禁带宽度的关系

:2006203207;:2006205224(,214061):,,Eg:Eg,k:;;/;;:TN304:A:100423365(2006)0620702205RelationshipBetweenIntrinsicBreakdownFieldandBandgapofMaterialsWANGLi2mo(Dept.ofElectronics&InformationEngineering,JiangsuCollegeofInformationTechnology,Wuxi,Jiangsu214061,P.R.China)Abstract:Auniversalexpressionfortherelationshipbetweenintrinsicbreakdownfieldandbandgapofbothsemiconductorsandinsulatorsisproposed.AquantitativecriterionforclassifyingmaterialsbytheirbandgapEg,i.e.,abreakdownfieldcriterion,isproposedforthefirsttime.Simplifiedfiguresofmeritofsomeimportantsemi2conductorsexpresseddirectlybybandgapEgaregiven.Thevaluesoftheintrinsicbreakdownfieldofmanyimpor2tantbinarycompoundsemiconductorsandhigh2kgatedielectricsarecalculated.Keywords:Intrinsicbreakdownfield;Bandgap;Semiconductor/Insulator;Breakdownfieldcriterion;Simplifiedfigure2of2meritEEACC:2520;2810D1,:EB,EBM,EBI,EB(),,EBIEB,EBM,,EBMEBI(EBIEBM),EC(EBM)EgSiGeGaAsGaP,EC=1.02107(q/)1/2NB1/8Eg3/4[1],,,(LSM)13,EBM(I)=1.73105Eg()EBM(D)=2.38105Eg2.5()[2],EBMLSM,EBM366200612MicroelectronicsVol136,6Dec12006,,,()[3],,ZrO2EBM=20MV/cm[4],EBI20MV/cm,[3]3.35.7MV/cm,,,,,,21148([5]AlN[6,30],)1121EBMEg11EBMEg(T=300K)[]InSb[7]InAs[7]GaSb[7]Ge[7]Si[7]GaAs[11]InP[7]AlAs[9]GaP[7]SiC[7]3C6H4HCdSGaN[7]Eg/eV0.170.3540.7260.671.111.431.342.172.262.363.03.232.42[8]3.37EBM/MVcm-10.0010.040.050.10.30.60.50.61.01.0551.8[10]521EBMEg(T=300K)[]Ta2O5[12]HfO2ZrO2[6]AlNDiamondSi3N4SiO2Al2O3(sapphire)[15]Eg/eV4.24.35.56[13]576.23[16]5.466.4[7]5.0[8]9.0[8]1823EBM/MVcm-11013[14]2015[17]21.5[18]16[19]30[2]39(LSM),:EBM(,EBM=EBI),,;:EBM=1.36107Eg4.0(V/cm)(1),(),=3;,=1,1:EBIS=1.36107Eg4.03(V/cm)(2)EBII=1.36107Eg4.0(V/cm)(3),EBISEBII,(3)6:703,,(Eg=0eV),,,33.1,()Eg,,,,Muller10-2105cm[21],10-3108cm[22],Berger10-51011cm[23]Eg,MullerEg5.0eV[21],QuirkEg2.0eV[24]1,,Eg=4.0eV:Eg4.0eV;Eg4.0eVEg=0eV,:Eg,Eg=0eV,Eg04.0eV,Eg4.0eV,,Eg0.2eV,,4.0eV3.2,,1,3.3,,(2),Eg,3,Si,,,,3,Eg3EBIEgJohnson[25]JFOMEBIvs221.1310102v2sE6gv2sE6gBaliga[26]BFOME3BI9.66105E9gE9gBaliga[27]BHFFOME2BI4.541010E6gE6gHuang[28]HMFOMEBI2.13105E3gE3gHuang[28]HCAFOME2BI4.541010E6gE6gHuang[28]HTFOMthEBIth2.13105E3gthE3gGao2Morkoc[29]CollectorFOM5/4SEBI2.13105(5/4S)Eg35/4SEg3:th3.4,;,,Eg(,),,Eg,,EgSiO2MOSFETEg,,704:2006454(T=300K)EBIS=1.36107(Eg/4.0)3V/cmGeSiSiC3C4H6HAlSbBPGaNGaSbGaAsGaPInAsEg/eV[7,8]0.661.122.363.233.01.582.03.360.721.422.260.36EBIS/MVcm-10.0610.302.807.185.750.841.708.080.080.612.460.01InSbInPCdSCdSeCdTeZnOZnSPbSPbTeAlAsAlPZnSeZnTeEg/eV[7,8]0.171.352.421.701.563.353.680.400.312.162.452.72.25EBIS/MVcm-10.001050.523.021.050.818.0110.60.0140.00642.153.134.192.435k(T=300K)EBII=1.36107(Eg/4.0)V/cmkSiO2Si3N4HfO2ZrO2Y2O3Ta2O5La2O3Pr2O3Gd2O3Lu2O3Eg/eV[31,32]9.05.36.05.86.04.46.04.65.35.4EBII/MVcm-130.618.020.419.720.415.020.415.618.018.44:1);2)Eg//:;3),;4);5),,,,:[1]SzeSM,GibbonsG.Avalanchebreakdownvoltagesofabruptandlinearlygradedp2njunctionsinGe,Si,GaAsandGaP[J].ApplPhysLett,1966,8(5):1112113.[2]HudginsJL,SiminGS,SantiE,etal.Anassess2mentofwidebandgapsemiconductorsforpowerde2vices[J].IEEETransPowerElec,2003,18(3):9072914.[3]McPhersonJW,KimJ,ShanwareA,etal.Trendsintheultimatebreakdownstrengthofhighdielectric2con2stantmaterials[J].IEEETransElecDev,2003,50(8):177121778.[4]ChangJP,LinY2S,ChuK.Rapidthermalchemicalvapordepositionofzirconiumoxideformetal2oxide2semiconductorfieldeffecttransistorapplication[J].JVacSciTechnol.2001,B19(5):178221787.8[5]KohnE,AdamschikM,SchmidP,etal.Prospectsofdiamonddevices[J].JPhysD:ApplPhys,2001,34(16):R772R85.[6]KawabeK,TredgoldR,InuishiY.ElectricalandOp2ticalpropertiesofAlNathermostablesemiconduc2tor[J].ElecEngineerJapan,1967.87(1):62270.[7]NationalCompoundSemiconductorRoadmap[EB/OL].[8]SzeSM.PhysicsofSemiconductorDevices[M].NewYork:Wiley,1981.[9]GoldbergYuA,Handbookonsemiconductorparame2ters:Vol2[M].Singapore:WorldScientificPublish2ingCo.Pte.Ltd.,1996.Chapter1:124.[10]WilliamsR.Highelectricfieldsincadmiumsulfide:field2effectconstrictionofcurrentflowanddielectricbreakdown[J].PhysRev,1961,123(5):164521651.[11]YoderMN.Widebandgapsemiconductormaterialsanddevices[J].IEEETransElecDev,1996,43(10):163321636.[12]CaughmanJ,BeachD,JellisonJ.Opticalpropertiesoftantalumoxidefilmsproducedbyhighdensityplasmaenhancedchemicalvapordeposition[A].47thAVSNationalSymp[C].OakRidgeNationalLaboratory.2000.2612280.[13]BalogM,SchieberM,MichmanM,etal.ChemicalvapordepositionandcharacterizationofHfO2filmsfromorgano2hafniumcompounds[J].ThinSolidFilms,1977,41(2):2472259.[14]LeeJC.High2kGateDielectrics:ZrO2andHfO2,[A].4thAnnualTopicalConfReliability[C].Stan2fordUniversity.2000.27231.[15]GardnerJW,VaradanVK,AwadelkarimOO.Mi2crosensors,MEMS,andSmartDevice(AppendixH)[M].NewYork:JohnWiley&Sons,2001.[16]VargaftmanI,MeyerJR,Ram2MohanLR.Bandpa2rametersfor2compoundsemiconductorsandtheiralloys[J].JApplPhys,2001,89(11):581525875.[17]ChuTL,KelmJrRW.Thepreparationandproper2tiesofaluminumnitridefilms[J].JElectrochemSoc,1975,122(10):99521000.6:705[18]LiuP,YenR,BloembergenN.Dielectricbreakdownthreshold,two2photonabsorption,andotheroptic