镍薄膜制备与性能研究

苏州科技学院本科生毕业论文I苏州科技学院本科生毕业论文课题名称：镍薄膜制备与性能研究院系名称：数理学院班级：应物1122班学号：1120112226学生姓名：齐栋宇指导教师：程新利2015年5月苏州科技学院本科生毕业论文II镍薄膜制备与性能研究摘要本文使用磁控溅射设备在n型硅基片上制备镍薄膜，研究不同工作气压（1Pa、1,5Pa、2Pa）对辉光放电、薄膜生长速率以及薄膜表面形貌与粗糙度的影响。结果表明，工作气压的变化对镍薄膜生长速率影响较大，1Pa工作气压条件下，镍薄膜生长速率较快，2Pa次之。使用低压化学气相沉积设备对镍薄膜样品进行退火处理，分析样品经退火处理后各项特性的改变。实验结果分析表明，样品经退火后表面形貌改变较大，变得更加粗糙。样品经退火后各项特性的改变不仅与退火温度有关与薄膜厚度也有关系。关键词磁控溅射；镍薄膜；表面形貌；粗糙度；退火苏州科技学院本科生毕业论文IIThepreparationandcharacterizationofnickelthinfilmAbstractInthispaper,nickelthinfilmwasproducedonton-typeSisubstratesbymegnetronsputteringdevice,andtheinfluenceonglowdischarge,growthrate,surfacetopographyandroughnesscausedbydifferentworkingairpressure(1Pa,1,5Pa,2Pa)hasbeeninvestigated.Theresultturnsoutthatthechangeofworkingairpressurehasagreatinfluenceonthegrowthrateofnickelfilm.Undertheworkingpressureof1Pa,thegrowthrateofNifilmisfaster,then2Pa.SampleswereannealedbyusingLPCVDdevice,andchangesonfunctionalcharacteristicsofsamplesafterannealinghavebeenanalyzed.Theexperimentalresultshowsthatthesurfacetopographyofsampleshavebeenchangedsignificantlyandtheroughnesshasbecomelargerafterannealing.Thecharacteristicsofthesampleafterannealingarenotonlyrelatedtotheannealingtemperaturebutalsotothethicknessofthefilm.Keywordsmagnetronsputtering;nickelthinfilm;surfacetopography;roughness;anneal苏州科技学院本科生毕业论文III目录第1章绪论...........................................................................................................11.1引言..........................................................................................................11.2Si的基本性质.........................................................................................21.3Ni的基本性质.........................................................................................2第2章实验仪器介绍及原理说明........................................................................32.1磁控溅射设备..........................................................................................32.1.1溅射镀膜设计原理......................................................................32.1.2磁控溅射.......................................................................................42.2LPCVD设备............................................................................................42.3探针式表面轮廓仪..................................................................................52.4原子力显微镜..........................................................................................62.6半导体分析系统......................................................................................72.7金相显微镜..............................................................................................7第3章金属与半导体接触....................................................................................83.1金半接触..................................................................................................83.2金属硅化物..............................................................................................8第4章实验............................................................................................................94.1实验目的..................................................................................................94.2实验设备以及材料..................................................................................94.3实验内容..................................................................................................94.3.1基片前处理...................................................................................94.3.2薄膜的制备.................................................................................104.3.3退火处理.....................................................................................11第5章实验结果及分析......................................................................................125.1不同工作气压下辉光的区别................................................................125.2不同工作气压对薄膜生长速率的影响................................................135.3薄膜表面形貌与粗糙度分析................................................................165.3.1不同工作气压下薄膜的表面形貌与粗糙度.............................175.3.1退火处理对薄膜表面的影响.....................................................22苏州科技学院本科生毕业论文IV5.4退火处理对样品U-I特性的影响........................................................24结论.....................................................................................................................26致谢.....................................................................................................................27参考文献.........................................................................................................28附录A译文.........................................................................................................29附录B外文原文.................................................................................................35苏州科技学院本科生毕业论文1第1章绪论1.1引言目前，随着半导体和微电子行业的蓬勃发展，薄膜科技与技术愈来愈受到人们的关注。薄膜技术是半导体技术中十分重要的一部分，可以说薄膜技术及工艺的发展对半导体器件和微电子行业的发展起到了极其重要的推动作用。膜最大的特点就是其厚度一维线性尺度远远小于其他二维尺度。通常，薄膜（thinfilm）的厚度小于1μm，而厚度大于1μm的则为厚膜；因为薄膜在厚度这一特定尺寸上十分微小，只可以通过微观测量，并且在厚度方向上由于存在界面，从而使得界面处的物质处于非连续性状态，使得薄膜材料拥有块状材料所不具有的特殊性能[1]。薄膜的制备方法很