西安交通大学学报任庆利1

38220042JOURNALOFXIANJIAOTONGUNIVERSITYVol.382Feb.2004Si4+1,1,2(1.,710049,;2.,710049,):Si4+[Mg6Al2(OH)16CO3]4H2O,NaAlO2,Si4+.:Na2SiO301012mol/L,Si4+,Si4+,,.DSC2TG,Si4+,17,515%,.:;;Si4+:TM212:A:0253-987X(2004)02-0181-05EffectofSi4+2DopingontheStructureandDecompositionBehaviorofNanocrystallineMg,Al2HydrotalciteRenQingli1,ChenShoutian1,WuHongcai2(1.SchoolofElectricalEngineering,XianJiaotongUniversity,Xian710049,China;2.SchoolofElectronicsandInformationEngineering,XianJiaotongUniversity,Xian710049,China)Abstract:BytakingNaAlO2asthealuminumresource,theMg,Al2hydrotalciteflame2retardantagentsampleswith/withoutSi4+2dopingweresuccessfullypreparedbytheone2stepliquidreactionmethodatatmosphericpres2sure.TheeffectofSi4+concentrationonthestructureandnucleationofnanocrystallineSi4+2dopedMg,Al2hy2drotalciteisdiscussedaccordingtotheresultsofXRD.BasedontheresultsofIR,itisrecognizedthatSi4+canenterthehydroxyl(OH-)octahedralstructurespaceofthepositivechargedbasiclayer[Mg6Al2(OH)16]2+ofMg,Al2hydrotalcite.Moreover,thecolorofthenanocrystallineMg,Al2hydrotalcitewaschangedfromwhitetoblueafterdopingSi4+.Besides,afterSi4+doping,thecrystalgrowthofMg,Al2hydrotalciteisrestrained,whichisdecreasedfrom350nmforthesamplewithoutSi4+2dopingto100nmforthesamplewithSi4+2doping;itsthermaldecompositiontemperaturerangeiswidenedfrom1701944214to1701146815;andtheresidualamountisincreasedfrom5611%to6116%%.Accordingly,thermalstabilitypropertyofMg,Al2hy2drotalcitebeoptimizedbydopingSi4+.Keywords:Mg,Al2hydrotalcite;nanocrystalline;Si4+2doping,,[1],[2,3].,,,.[Mg6Al2(OH)16CO3]4H2O[4],Mg3(SiO10)(OH)2Al4(SiO10)(OH)8:2003-05-29.:(1968),,;(),,,.:.©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved..,,.[SiO4][SiO6],[SiO4],[SiO6]13.,2030[SiO6][5,6].,Si4+,Si4+[Mg6Al2(OH)16]2+,[SiO6],,.1MgCl2NaAlO2NaOHNa2SiO3Na2CO3,Mg6(Al2-xSix)(OH)16CO34H2O(x01016)Si4+.1L,,85,2h.,,23,,100,.EDTA,.Rigaku-2400/MAX12kWXXRD.JEM-200CX.DSCTGSDT2960-,01001,011g,DSC215/min,TG10/min.XRD,m=xmni=1xi(1):xmximi(1in,1mn).22.1Si4+1Na2SiO3Na2SiO3XRD.Na2SiO301012mol/L,98%,Na2SiO301012mol/L,.(a)Na2SiO3(2h)(b)Na2SiO31XRD2,ct.,,,.3TEM.3Na2SiO3Na2SiO3TEMTEM.,10nm,.,,,.Si4+01041nm,Mg2+(01078nm)Al3+(01057nm),Mg2+[Mg6Al2(OH)16]2+.,,28138©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,Si4+.Si4+,Si4+,Si4+.Si4+,.4d(003)Na2SiO3.,Na2SiO3,(003).(003),.,,.2Mg2+Al3+(a)Na2SiO3(b)Na2SiO33TEMTEM2.2Si4+(IR)5.,:36003500cm-1,;18001000cm-1,;1000200cm-1,MO(MMgAl).,:3700cm-1SiO,Si4+;13671466cm-1.Serna[7]CO32-,1400cm-1,CO32-.Si4+(OH-),Si4+4,Mg2+2,,CO32-,CO32-D3h,.2.3Si4+6Si4+Si4+TEMTEM.,4Na2SiO3Na2SiO35IR3812,:Si4+©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.(a)Si4+(b)Si4+6TEMTEM(2h)Na2SiO3,2h,7080nm,,.IR,Si4+OH-,Mg6AlxSi2-x(OH)16CO34H2O.4Si4+3Al3+,Mg2+,.,Si4+Mg2+,.,[3].Si4+,Si4+,Si4+.2.4Si4+,.,,-,[8].,Si4+(Mg6(AlxSi2-x)(OH)16CO34H2O):Si4+,[Mg6(AlxSi2-x)(OH)16]2+,MgO6AlO6SiO63,MgO6,AlO6SiO612;,SiO6;,Si4+,,3;,,.2.5Si4+12Na2SiO30101mol/L,DSCTG.,,2,,.,,,,CO32-,.:,2,.,,,CO2,,.,HCl,.,,,.,,,,,[9],.48138©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1DSC1/DSC/Jg-12/DSC/Jg-1170.9223.1284.3296.2442.41865.7170.1227.521810305.5468.51848.82TG1/%12.1012.92/%26.3131.03(1),,98%.,,[SiO6].(2),.2,,.:[1].[J].,1999,28(3):2931.[2]RenQingli,LuoQiang,WuHongcai,etal.Theprepa2rationandthermalpropertyoftheacicularMg,Al2hydro2talcite[J].KeyEngineeringMaterials,2002,224-226:237241.[3]RenQingli,LuoQiang,LiuDaizhi,etal.MechanismofformingthenanocrystallineMg,Al2hydrotalciteanditscrystalprocessingunderhydrothermalconditions[J].Ma2terialsScienceForum,2003,423-425:151156.[4]AngeloV.Preparationandcatalyticpropertiesofcationicandanionicclays[J].CatalysisToday,1998,41:5371.[5]F.:[M].,.:,1989.[6],.[M].:,1990.[7]Hernandez2MorenoMJ,UlibarriMA,RendonJL,etal.IRcharacteristicsofhydrotalcite2likecompounds[J].PhysChemMinerals,1985,12:3438.[8],.[M].:,1999.[9],.Al2O3.3H2OMg(OH)2HDPE[J].,1990,6(2):6166.()(169)[3]SteimerPK,GruningHE,WerningerJ,etal.IGCT-anewemergingtechnologyforhighpower,lowcostinverters[J].IEEEIndustryApplicationsMagazine,1999,5(4):1218.[4]ChristopherMS.Introductiontosemiconductordevicemodeling[M].Singapore:WorldScientificPublishingCompany,1986.7679.[5]EicherS,BauerF,ZelleHR,etal.Designconsidera2tionsfora7kV/3kAGTOwithtransparentanodeandbufferlayer[A].The27thAnnualIEEEonPowerElec2tronicsSpecialistsConference,Baveno,Italy,1996.[6]BauerF,DettmerH,FichtnerW,etal.Designconsid2erationsandcharacteristicsofruggedpunch2through(PT)IGBTswith4.5kVblockingcapability[A].The8thInternationalSymposiumonPowerSemiconductorDevicesandICs,Maui,USA,1996.[7]BauerF,FichtnerW,DettmerH,etal.AcomparisonofemitterconceptsforhighvoltageIGBTs[A].The7thInternationalSymposiumonPowerSemiconductorDe2vicesandICs,Yokohama,Japan,1995.()5812,:Si4+©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.