溅射功率和氧分压对ITO薄膜光电性能的影响研究

ITO3,,,,,,,,,,,(,610064):(ITO),X(XRD)(SEM),ITO,:ITO,;,,,,85%110-4cmITO:;;;:TB43;TN305.92:A:100129731(2009)05207172031n,(ITO),n,(1020cm-3)(10-4cm),,(3.54.3eV),,,[1,2]ITO2,ITO,,ITOITO,ITO2JGP350,ITO(m(In2O3)m(Sn2O3)=9010),100mm,,,1.0Pa,13113W,(PO2)0.0070.121Pa400,5minXP22(AmbiosTechnology),SZT22(),TU21901,XRDDX22500X,CuK(=0.15406nm)Keithley,S24800(SEM)33.11ITO,,,ITO,210-4cm,,,,,,,,,1ITOFig1Dependenceofresistivity,sheetresistanceanddepositionrateonDCpower717:ITO3:(863)(2003AA513010):2008210220:2008212225::(1984-),,,,,1,,,,(),ITO,ITO,,;(33W)ITO3.2ITO233WITOXRD2ITOXRDFig2XRDpatternsofITOfilmsdepositedunderva2riousoxygenpartialpressures2,(222),(222),,,,(222),(400)(222),:=0.9FWHM(cos)FWHM,ITO,0.0070.0330.121PaITO27.720.818.3nm,1.02161.02821.0209nm,,ITO1.0117nm,In2O3Sn,ITO,In3+Sn4+Sn2+0.0790.0690.093nm,Sn2+In3+3SEM3,(0.033Pa),ITO,(0.121Pa)ITOITOSn4+In3+[3]3ITOSEM(100000)Fig3SEMimagesofITOfilmsdepositedundervariousoxygenpartialpressures(100000)Sn4+,Sn4+In3+,Sn4+Sn4+e,Sn4+,In2O3In3+2-xSn3+xO3,:In2O3+xSn4+In3+2-x(Sn4+e)xO3+xIn3+In2O3In3+,O2-,In2O3,O2-,,In3+In+(In3+2e),In2O3In3+2-xIn+xO2-3-x,,:In2O3In3+2-x(In3+2e)xO2-3-x+x2O24ITO4,(0.033Pa),0.033Pa,,55,,O2In,,,,0.121Pa,In2O3(InO),:In2O3()2InO+O,,[4],ITO81720095(40)0.0070.033Pa,,210-4cm5,,,,[5]3.3ITO6ITO6,,,ITO,,,InO,,(hv)2hv(7),ITO3.964.02eV,3.53eV[6],,,Moss2Burst2ein[7],,,,Moss2Burstein:Eg=2h22m33n23n,m3,h,IO(In2O3)[8],,4ITO,,,ITO,,,ITOITO,,,,,,,,Moss2Burstein,85%110-4cmITO:[1]ShinJH,ShinSH,ParkJI,etal.[J].JApplPhys,2001,89:519925203.[2].[J].,2007,38(8):1247.[3]TaharRB,BanT,OhyaY,etal.[J].JApplPhys,1998,83:263122645.[4]CarlK,SchmittH,FriedrichI.[J].ThinSolidFilms,1997,295:1512155.[5]ChoiCG,NoK,LeeWJ,etal.[J].ThinSolidFilms,1995,258:276.(723)917:ITO[9]LiuXuedong,LuDianqing,XuChao,etal.[J].JournalofRareEarth,2006,24(Suppl):25228.[10],,,.[J].,2006,27(5):76279.[11]BindraS,SinghC,BaiY,etal.[J].MareialsChemistryandPhysics,2008,111(223):2252231.[12]PanXF,MuGH,ShenHG,etal.[J].AppliedSur2faceScience,2007,253:411924112.[13]ChenN,MuGH,PanXF,etal.[J].MaterialsScienceandEngineeringB,2007,139:2562260.[14],,,.[J].,2002,15(2):1492152.[15]ZhangZM,WanMX.[J].SyntheticMetals,2003,132:2052212.[16]ShamsMH,SalehiSMA,GhasemiA.[J].MaterialsLetters,2008,62:173121733.[17]SinghP,BabbarVK,RazdanA,etal.[J].JApplPhys,2000,87(9):436224365.[18],,.[J].(),2004,32(7):9292932.[19]DengJ,etal.[J].Polymer,2002,43:217922184.[20],,.[J].,1998,29(5):4832485.[21]YusoffAN,AbdullahMH,AhmadSH,etal.[J].JApplPhys,2002,92(2):8762882.[22]GhasemiA,Hossienpour,MorisakoA.[J].JMagnMagnMater,2006,302(2):4292435.[23]SugimotoS,HagaK,InomataTKK.[J].JMagnMagnMater,2005,2902291:118821191.[24].[M].:,2001.3222338.PreparationandmicrowaveabsorptionpropertiesofSr0.7La0.15Ce0.15Fe11.7Zn0.3O19/PAncompositepowdersZHOUKe2sheng,JIANGCai2hua,DENGLian2wen,LIUXiu2li,LIUHui(SchoolofPhysicsandScienceTechnology,CentralSouthUniversity,Changsha410083,China)Abstract:Thenano2crystallinepowdersampleofSr0.7La0.15Ce0.15Fe11.7Zn0.3O19asastrontiumferritedopedwithLa,CeandZnwaspreparedbysol2geltechnique.Thedopedstrontiumferrite/polyaniline(PAn)nanocompositesamplewassynthesizedbyinsitupolymerization.ThesamplewascharacterizedbyXRD,SEM,FTIRspectrum.Thereflectance(R)ofthesesampleswasmeasuredbymicrowavenetworkanalyzerinthefrequencyrangefrom2to12.4GHz.TheresultsshowedthatthedopedstrontiumferritepowdersweresuccessfullycoatedwithPAnandSr0.7La0.15Ce0.15Fe11.7Zn0.3O19/PAnnanocompositeexhibitedexcellentmicrowaveabsorptionpropertiesbe2causeofacooperativemechanismofelectricandmagneticloss.Themicrowaveabsorptionpeakofthecompositewas-28dBat10GHzandtheabsorptionbandwidthgreaterthan10dBwas4.7GHzwhenitsthicknesswas3mm.FromthetrendofRchangingwithfrequency,thebestmatchthicknesswas2.6mmsothatmicrowaveab2sorbingpeakwasnear-40dBatafrequencyhigherthan12.4GHzandtheabsorptionbandwidthgreaterthan10dBwasexpectedtoreach5.5GHz.Keywords:dopedstronium;polyaniline;microwaveabsorption;composites(719)[6]RayS,BanerjeeR,BasuN,etal.[J].JApplPhys,1983,54:3497.[7]RothA.[J].SolidStateCommun,1981,39(12):126921271.[8]VossenJL.[J].PhysRCARev,1971,32:289.Influenceofdcpowerandoxygenpartialpressureontheelectricalandopticalpropertiesofindium2tin2oxidefilmsWANGSheng2hao,ZHANGJing2quan,WANGBo,FENGLiang2huan,CAIYa2ping,LEIZhi,LIBing,WULi2li,LIWei,ZENGGuang2gen,ZHENGJia2gui,CAIWei(CollegeofMaterialsScience&Engineering,SichuanUniversity,Chengdu610064,China)Abstract:Indium2tin2oxide(ITO)filmsweredepositedonglasssubstratebyDCmagnetronsputtering.TheeffectsofDCpowerandoxygenpartialpressureonthemicrostructure,electricalandopticalpropertiesoftheITOthinfilmswerestudiedbyfour2pointprobe,X2raydiffraction(XRD),UV2visspectrometer,hallmeasure2mentandscanningelectricalmicroscope(SEM).Theresultsshowedthatthefilmshadapreferredorientationinthe(222)plane.DCpowerhadlittleinfluenceontheoptoelectricalpropertiesoftheITOfilmsandthedepo2sitionrateincreasedwiththeincreaseofDCpower.Asoxygenpartialpressureincreased,theHallmobilityofthefilmsincreasedinitiallyandthendecreasedwhilethechargecarrierconcentrationdecreasedandtheresisti