ESD5431N

ESD5431NWillSemiconductorLtd.1Revision1.5,2017/03/14ESD5431N1-Line,Bi-directional,TransientVoltageSuppressorsDescriptionsTheESD5431Nisabi-directionalTVS(TransientVoltageSuppressor).Itisspecificallydesignedtoprotectsensitiveelectroniccomponentswhichareconnectedtopowerlines,lowspeeddatalinesandcontrollinesfromover-stresscausedbyESD(ElectrostaticDischarge),EFT(ElectricalFastTransients)andLightning.TheESD5431NmaybeusedtoprovideESDprotectionupto±30kV(contactdischarge)accordingtoIEC61000-4-2,andwithstandpeakpulsecurrentupto10A(8/20μs)accordingtoIEC61000-4-5.TheESD5431NisavailableinDFN1006-2Lpackage.StandardproductsarePb-freeandHalogen-free.FeaturesStand-offvoltage:±3.3VMax.TransientprotectionforeachlineaccordingtoIEC61000-4-2(ESD):±30kV(contactdischarge)IEC61000-4-4(EFT):40A(5/50ns)IEC61000-4-5(surge):10A(8/20μs)Capacitance:CJ=17.5pFtyp.Lowleakagecurrent:IR=1nAtyp.Lowclampingvoltage:VCL=8Vtyp.@IPP=16A(TLP)Solid-statesilicontechnologyApplicationsCellularhandsetsComputersandperipheralsMicroprocessorsPowerlinesPortableElectronicsNotebookshttp//:(BottomView)Circuitdiagram1=Devicecode*=Monthcode(A~Z)Marking(TopView)OrderinformationDevicePackageShippingESD5431N-2/TRDFN1006-2L10000/Tape&ReelPin1Pin2Pin1Pin21*ESD5431NWillSemiconductorLtd.2Revision1.5,2017/03/14AbsolutemaximumratingsElectricalcharacteristics(TA=25oC,unlessotherwisenoted)DefinitionsofelectricalcharacteristicsParameterSymbolRatingUnitPeakpulsepower(tp=8/20μs)Ppk100WPeakpulsecurrent(tp=8/20μs)IPP10AESDaccordingtoIEC61000-4-2airdischargeVESD±30kVESDaccordingtoIEC61000-4-2contactdischarge±30JunctiontemperatureTJ125oCOperatingtemperatureTOP-40~85oCLeadtemperatureTL260oCStoragetemperatureTSTG-55~150oCIVVRWMVTRIGVHOLDIPPIRITRIGIHOLDVCLIPPVRWMVTRIGVHOLDVCLIRITRIGIHOLDVRWMReversestand-offvoltageIRReverseleakagecurrentVCLClampingvoltageIPPPeakpulsecurrentVTRIGReversetriggervoltageITRIGReversetriggercurrentVBRReversebreakdownvoltageIBRReversebreakdowncurrentVHOLDReverseholdingvoltageIHOLDReverseholdingcurrentIBRVBRIBRVBRESD5431NWillSemiconductorLtd.3Revision1.5,2017/03/14Electricalcharacteristics(TA=25oC,unlessotherwisenoted)Notes:1)TLPparameter:Z0=50Ω,tp=100ns,tr=2ns,averagingwindowfrom60nsto80ns.RDYNiscalculatedfrom4Ato16A.2)Contactdischargemode,accordingtoIEC61000-4-2.3)Non-repetitivecurrentpulse,accordingtoIEC61000-4-5.ParameterSymbolConditionMin.Typ.Max.UnitReversestand-offvoltageVRWM±3.3VReverseleakagecurrentIRVRWM=3.3V1100nAReversebreakdownvoltageVBRIBR=1mA3.4VReverseholdingvoltageVHOLDIHOLD=50mA3.4VClampingvoltage1)VCLIPP=16A,tp=100ns8VClampingvoltage2)VCLVESD=8kV8VClampingvoltage3)VCLIPP=1A,tp=8/20μs6VIPP=5A,tp=8/20μs8VIPP=10A,tp=8/20μs10VDynamicresistance1)RDYN0.20ΩJunctioncapacitanceCJVR=0V,f=1MHz17.522pFVR=3.3V,f=1MHz12.516pFESD5431NWillSemiconductorLtd.4Revision1.5,2017/03/14Typicalcharacteristics(TA=25oC,unlessotherwisenoted)8/20μswaveformperIEC61000-4-5Clampingvoltagevs.PeakpulsecurrentNon-repetitivepeakpulsepowervs.PulsetimeContactdischargecurrentwaveformperIEC61000-4-2Capacitancevs.ReversevoltagePowerderatingvs.Ambienttemperature-4-3-2-101234101214161820f=1MHzVAC=50mVCJ-Junctioncapacitance(pF)VR-Reversevoltage(V)11010010001101001000Peakpulsepower(W)Pulsetime(s)0255075100125150020406080100%ofRatedpowerTA-Ambienttemperature(oC)t60ns30nstr=0.7~1ns1090100Current(%)Time(ns)02468101245678910Pin2toPin1Pin1toPin2Pulsewaveform:tp=8/20sVC-Clampingvoltage(V)IPP-Peakpulsecurrent(A)0010020905010T2T1Fronttime:T1=1.25T=8sTimetohalf-value:T2=20sPeakpulsecurrent(%)Time(s)TESD5431NWillSemiconductorLtd.5Revision1.5,2017/03/14Typicalcharacteristics(TA=25oC,unlessotherwisenoted)ESDclamping(+8kVcontactdischargeperIEC61000-4-2)TLPMeasurementESDclamping(-8kVcontactdischargeperIEC61000-4-2)-10-8-6-4-20246810-20-16-12-8-4048121620Z0=50tr=2nstp=100nsTLPcurrent(A)TLPvoltage(V)WillSemiconductorLtd.6Revision1.5,2017/03/14PACKAGEOUTLINEDIMENSIONSDFN1006-2L TopViewBottomViewSideViewRecommendedPCBLayout(Unit:mm)SymbolDimensionsinMillimetersMin.Typ.Max.A0.3400.4500.530A10.0000.0200.050A30.125Ref.D0.9501.0001.075E0.5500.6000.675b0.2000.2500.300L0.4500.5000.550e0.650BSCCATHODEMARKINGDEA3A1A(Ⅰ)(Ⅱ)(Ⅲ)(Ⅰ)(Ⅱ)ebLNotes:Thisrecommendedlandpatternisforreferencepurposesonly.PleaseconsultyourmanufacturinggrouptoensureyourPCBdesignguidelinesaremet.0.550.600.851.400.30WillSemiconductorLtd.7Revision1.5,2017/03/14TAPEANDREELINFORMATIONReelDimensionsTapeDimensionsWP1QuadrantAssignmentsForPIN1OrientationInTapeQ1Q2Q4Q3Q1Q2Q4Q3RDReelDimensionWOverallwidthofthecarriertapeP1PitchbetweensuccessivecavitycentersPin1Pin1QuadrantUserDirectionofFeedRD7inch13inch8mm12mm2mm4mm8mmQ1Q2Q3Q4