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上海交通大学硕士学位论文中压矿用变频器主电路损耗分析及散热设计姓名:李文顶申请学位级别:硕士专业:机械设计及理论指导教师:莫锦秋;曹家勇20090201II1140V/80KWIGBTICEPAKIIILOSSANALYSISANDTHERMALDESIGNOFMID-VOLTAGEMINE-USEDINVERTERMAINCIRCUITABSTRACTWiththerapiddevelopmentofthepowerelectronictechnology,theheatemissionproblemofpowerdevicesbecomemoreandmoreimportant.AsaresultoftheACAdjustingSpeedTechnology,theinverter,whichisoneofimportantmethodsthatareusedtosaveenergyandreduceconsumption,isusedmoreandmoreintheindustrialtechnologyfield.Theelectroniccomponentsusedinthehighpowerinverterhavethesimilarthermaldesignrequirements.Ascertainingthepowerlossesofinverter’smaincircuitandheatdissipationdesignnotonlycantobeusedtoguaranteetheinverter’snormaloperation,butalsothemainwaytoincreasetheinverter’sservicelife.Thepowerdissipationofthe1140V/80KWM/D-VOLTAGEMINE-USEDpowerinverter’smaincircuitisanalyzedinthisthesis.ThelinearityapproximativemethodontotheIGBTmodule’spowerlossesisintroduced.Heatpathbetweentheheatsourceofpowerdeviceandexternalenvironmentareanalyzed,andaccordingtotheheat-resistancemethod,awatercoolingradiatorisdesigned.FurtherresearchtothecoolingradiatorapplyingthespecialthermalanalysissoftwarenamedasIcepakisgiveninthisthesis,andtheeffectofdifferentparametersonIVheatsinkisanalyzed,thatarehelpfulforthecoolingplate’soptimizationdesign.Theresearchresultssuggestthatthepowerdissipationanalysisofthehighpowerinvertermaincircuitisauthentic,andalsosuggestthatthecoolingplatethatisdesignedinthisthesiscansatisfytheheatdissipationoftheinverter.Themaincircuit’sheatemissionprobleminthehighpowerinvertercanbedealteffectivelythroughdesign.Keywords:highpowerinverter,maininverter,powerlosses,heatdissipationdesign,heattransfermodel,computersimulation200922I20092220092211.1[1]--IGBT[2]101.21140V/80KW660V1140V1140V220V380V660V1140V660V6000V21140V1140V1.3[4]15.5KW/m246.5KW/m2101978J.C.HAN,L.R.GLICKSMANW.M.ROHSENOW[5]()1995[6]91995[9]TDMA1996[10]1997TanakaT./MatsushimaH./UekiA./Atarashi[7]1998[8]CADAPOLLO31.41140V/80KWIGBT1140V/80KWIcepak42.1500V110KVVSICSI2-11140V/80KWUDFig2-1Themaincircuitofinverter2.22.2.1IGBTIGBTGCEIGBTNIGBT2-2IGBTMOSFET5MOSFETPNPRdrIGBTuGEuGEuGE(h)MOSFETIGBTuGEMOSFETIGBTRdrRmPNPNPNEGCE(S)GC(D)b)a)Fig2.2EquivalentcircuitandsymboloftheIGBTa)EquivalentcircuitoftheIGBT;b)SymboloftheIGBTIGBT2-3Fig2-3CircuitstructureoftheIGBT62.1IGBTV1V6EUPECFF200R33KF2CIGBTIGBT2.2.2PNPNPNFU2.1D1D6EUPECDD175N2.2.31122PNPN−−−N1NPP1P2PNP2N2NPNAKG2.11140V/80kWVEUPECTZ240N2.31)[17]2.34(1140/3)1540VCV=∗=72)[17]/0.816145DCIIA==3)1/348DDIIA==2.42.4.1IGBTIGBTIGBTPWMIGBT[14]Fig2-4TypicaloutputcharacteristicsoftheIGBTIGBTIGBTIGBTIGBT2-42-58IGBTIGBTIGBT2-1IGBTV1D7IGBTFig2-5SwitchwaveformoftheIGBT1IGBT/01=2fwVCECPvidπδαπ∫2-1CEvIGBTδCi2.4IGBTIGBTV1CE0=VCECECvri+⋅2.2CE0VCiCEvIGBT9CErCENCE0CNVVICEr−=CENVCNIsinCCMiIα=CMI2.2CE0(t)=VsinCECECMvrIα+⋅2.3PWMtSPWM2-62-6PWMUsaUbUMsinαTc/4tO1Ot1toff1tontoff1tontTcFig2-6symmetricregular-samplingstrategy2[1sin()]2ConTktMNπ=+(2.4)10kCTNM0M1NonCt1=[1sin()]T2Mδαθ=++02απ2.5θCEvδsinCCMiIα=2.1/CE0011(Vsin)(sin)[1sin()]22fwVCECMCMPrIIMdπαααθαπ=+⋅⋅⋅++∫201cos1()(cos)8328CENCECMCEOCMCNVVMMIVIIθθππ−=+++×(2.6)/F01=(1)2fwDCPvidπδαπ−∫(2.7)FvIGBTD7F0F0()=V()=VsinFFFFCMvtritrIα+⋅+⋅(2.8)F0VCiFvFrFNF0CNVVIFr−=FNVCNI(2.8)(2.7)/F0011(Vsin)(sin)1[1sin()]22fwDFCMCMPrIIMdπαααθαπ=+⋅⋅−++∫112001cos1()(cos)8328CENFCMFCMCNVVMMIVIIθθππ−=−+−×(2.9)22.5IGBTCrrNCNittI=2.10rtCNIrNt0r=trtConciEVtdt⋅⋅∫2.11ccVsinCCMiIα=Cirt22sin111=222CCMonccCrccCrNccrNCNCNiiEVitVitVtIIα==(2.12)______01=2onEdonEπαπ∫218CMccrNCNIVtI=(2.13)sf______21==8CMonsccrNsCNIPFVtfonIE⋅⋅(2.14)(3)2.512a)1ft1fNt11CNCffNitti=(2.15)b)2ft1fNt1/3IGBT[17]21=(+)33CffNCNittI(2.16)fNt01=ftoffccCfEVitdtt⋅⋅∫(2.17)Cirt2111=(sinsin)236CMoffccCfccCMfNCNIEVitVItIαα=+(2.18)______0111=()2324CMoffccCMfNCNIEdVItoffIEπαππ=+∫(2.19)______11=()324CMoffsccCMfNsCNIPfVItfoffIEπ=⋅+(2.20)4IGBTCirrICii13rrCatiIit=+2.21rrt[17](0.80.2)CrrrrNCNittI≈+2.22rrIrrNI17[0.70.3]CrrrrNCNiIII=+2.23IGBT00()(0.350.15)aattCrraccccrrCccarrNrrNCaCNitEVidtVIidtVtIIitI==⋅+=++∫∫(2.24)IGBTIGBTCECVi()ccCECVVi−()CECccCECccCViVViVi+−=(0.350.15)CrrccrrrrNrrNCCNiEVtIIiI=++(0.80.2)(0.350.15)CCccrrNrrNrrNCCNCNiiVtIIiII=+++2.2502srrrrFPEdπαπ=∫2.262.252.2620.380.8{[0.280.015()](0.05)}2CMCMrrNrrNCMrrsccCMrrNCNCNCNIIItIPfVItIIIππ=++×++2.274IGBTFF200R33KF2CCENV=4.3VCNI=200AIGBTrNt=0.2sIGBTfNt0.2s14rrNI=300ArrNt=0.18sIGBT0CEV=1V0FV=0.7VCMI=DI=145AccV=1540VccVcosMθ=0.643510sF=×HZIGBT1)IGBT20/1cos1()(cos)8328CENCEfWVCMCEOCMCNVVMMPIVIIθθππ−=+++×210.644.3110.64()145()11458320028ππ−=+×++××=101W2)20/01cos1()(cos)8328CENFfWDCMFCMCNVVMMPIVIIθθππ−=−+−×210.644.3110.64()145()0.71458320028ππ−=−×+−××=31W3)21=8CMonccrNsCNIPVtfI⋅2-631145=15400.2105108200××××××=20W4)11[]324CMoffsCCCMfNCNIPfVItIπ=+3-6=51015401450.210[1/3/+145/24/200]π×××××=30W5)1520.380.8{[0.280.015()](0.05)}2CMCMrrNrrNCMrrsccCMrrNCNCNCNIIItIPfVItIIIππ=++×++35101540{{0.280.38145//200π=×××+×260.015[145/200]}3000.1810/2−+××××+6[0.8/0.05145/200]1450.1810}π−+××××137W=IGBTIGBTIGBT3*2*(101312030137)1914IGBTPW=++++=IGBT638W2.4.2dd175N1/348DDIIIA===100W1
本文标题:中压矿用变频器主电路损耗分析及散热设计
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