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1VibrationandNoiseDesignofAdvancedTechnologyFacilitiesAhmadBayat,P.E.J.ByronDavisVibro-AcousticConsultants29June20042VibrationandNoiseDesignofAdvancedTechnologyFacilitiesI.BriefbackgroundonVACCII.VibrationDesignofFacilitiesProblemDefinitionTwoDesignFundamentalsIII.NoiseDesignofFacilitiesIV.ToolHook-UpV.StructuralEvaluation3BackgroundonVACCOurbackground4WesternU.S.:IntelFabsLCE,C6,11,12,22,23;SandiaNat’lLabs;HPFortCollins;MotorolaCOM1,MOS12,andFlatPanel;MicronLehi,Boise,andMaskShop;Atmel;Vitesse;PhilipsFab25;Microchip(Phoenix);NCRProjects–UnitedStatesTexas:Atmel;MotorolaULSI/MOS13;TIDMOS5,DMOS6,KilbyCenter;AMDFab25;Samsung;MethodistHeartCenter(Lubbock)EastCoast:IBM(Burlington,EastFishkill);DominionSemiconductor;Lucent(Orlando);Seagate(Pitts.);Nat’lSecurityAgency(Ft.Meade)5California:IntelFabsD2,SC1,SC2,andIMO;StanfordUniversity;AMATBldg.s2,3,92,ArquesCenter,ScottCampus;IBMSanJose;IDT;LAMResearch;Vishay/Siliconix;NationalSemiconductor;LinearTechnology;AT&T;UCCampusesatBerkeley,Davis,andSanFrancisco;LawrenceBerkeleyNationalLabs;LawrenceLivermoreNat’lLabs/NationalIgnitionFacility;Projects–USWestCoastPacificNorthwest:IntelFabsD1B,D1C,RB1,15,andPathfinder;Hyundai;WaferTechCamus;FujitsuGresham;LSILogic;IDTMASCA;Maxim;SeattleFerryTerminal;UniversityofWashingtonCalPolySanLuisObispo;InternationalRectifier;UCIrvine;STMicroelectronics6Projects–SoutheastAsiaTaiwan,R.O.C.:TSMCFabs3,6,and7;WaferTech;QuantaTFT;Arima;Formosa;NanYaFabs1and3;Winbond;Formosa;Macronix;OPTOFab;AMATTaiwan;EagleTFTFab;UMC;PowerchipFab2;Acer;ChunghwaPictureTube;NanYa/InoteraChina:MotorolaTianjinMOS17,MOS17-XKorea:CTISKorea;AMATKoreaThailand:SMTMalaysia:WTM/SilterraSingapore:STMicroelectronicsAMK87Projects–EuropeScotland:MotorolaEastKillbrideIreland:IntelFabs10,24Italy:STMicroelectronicsCataniaM6France:STMicroelectronicsRousset8ProblemDefinition:Processes•BasicResearch•Universities,NationalLabs•CorporateR&D•Semiconductors,Devices•FlatPanelDisplayTechnologies•Pharmaceuticals,Biotechnology•NanotechnologyMatureProcessesDevelopingProcesses•Manufacturing•Microelectronics,FlatPanelDisplays•Pharmaceuticals,BiotechnologyTools•Nanotechnology(comingsoon)VibrationDesignofAdvancedTechnologyFacilities9ProblemDefinition:WhyVibration?Submicronmanufacturing/R&D……usuallyinasuper-cleanenvironmentSensitivityvs.power:100/100ruleMarriageof“Beauty”and“Beast”VibrationDesignofAdvancedTechnologyFacilities10ProblemDefinition:SourcesRotatingmachinery(tones/BB)–unknownPiping/ductworkturbulence(BB)–unknownMovementofpeople/materials(BB)–knownEnvironmentalsources–usuallyknownVibrationDesignofAdvancedTechnologyFacilities11Local&EnvironmentalSources12TypicalFloorVibrationDataNarrowband(Bandwidth=0.46875)0.11.010.0100.01000.0110100Frequency[Hz]RMSVelocity[micro-in/s]NarrowbandTonesvs.Broadband“Tones”“BroadbandRandomExcitation”VibrationDesignofAdvancedTechnologyFacilities13TypicalFloorVibrationDataNarrowband(Bandwidth=0.46875)0.11.010.0100.01000.0110100Frequency[Hz]RMSVelocity[micro-in/s]NarrowbandTonesvs.BroadbandttDeterministicSineWave(tone)FrequencyatShaftSpeedAmplitudeUnbalancedForceVibrationDesignofAdvancedTechnologyFacilities14TypicalFloorVibrationDataSummed1/3OctaveBandVC-DVC-E1.010.0100.01000.0110100Frequency[Hz]RMSVelocity[micro-in/s]1/3OctaveBandVC-D(250micro-in/s)VC-E(125micro-in/s)1/3OctaveBandDataDominatedby30Hz‘tone’Dominatedby60Hz‘tone’VibrationDesignofAdvancedTechnologyFacilities151/3OctaveBandvs.NarrowbandDataTypicalFloorVibrationDataNarrowband,Resulting1/3OctaveBandDataOverlay0.11.010.0100.01000.0110100Frequency[Hz]RMSVelocity[micro-in/s]Narrowband1/3OctaveBandVibrationDesignofAdvancedTechnologyFacilities16ImportanceofTonesTypicalFloorVibrationDataNarrowband(Bandwidth=0.46875)0.11.010.0100.01000.0110100Frequency[Hz]RMSVelocity[micro-in/s]TypicalFloorVibrationDataNarrowband(Bandwidth=0.46875)0.11.010.0100.01000.0110100Frequency[Hz]RMSVelocity[micro-in/s]VibrationDesignofAdvancedTechnologyFacilities17ImportanceofTonesTypicalFloorVibrationDataSummed1/3OctaveBandVC-DVC-E1.010.0100.01000.0110100Frequency[Hz]RMSVelocity[micro-in/s]TypicalFloorVibrationDataSummed1/3OctaveBandVC-DVC-E1.010.0100.01000.0110100Frequency[Hz]RMSVelocity[micro-in/s]VibrationDesignofAdvancedTechnologyFacilities18ProblemDefinition:StructuresMegafabs(usually10,000+m2CR)Sub-fabs(one-&two-level),stackedfabsMostlyconcrete,mostlycast-in-placeStructuralisolationbreaks(SIBs)Accessfloorsfrom~150mmto1.7msecondarystructuresforsensitivetoolsSoilDynamicsVibrationDesignofAdvancedTechnologyFacilities19ProblemDefinition:Structures–FPDFPDPanelSizeDrivingVibrationDesignVibrationDesignofAdvancedTechnologyFacilitiesNewerGenerationsLargerSubstratesLarger(Heavier)ToolsLarger(Longer)FabsFabFabFabFootprint20ProblemDefinition:Structures–FPDFPDPanelSizeDrivingVibrationDesignVibrationDesignofAdvancedTechnologyFacilitiesNewerGenerationsLargerSubstratesLarger(Heavier)AMHSsPotentialProcessTool,AMHSGeneratedVibrationTraditionalVibrationRequirements(VCCurves)21ProblemDefinition:Structures–FPDFPDProc