材料物理课件 (5)半导体器件原理

SemiconductiveDevices1,Semiconductivediode1),StructuresSpotcontactPNFacecontactPNSymbol：2),I-VcharacteristicsUIStartupVoltage:Si:0.6V,Ge:0.2V。OperatingVoltage:Si:0.6~0.7V,Ge:0.2~0.3V。ReversesaturatedVoltage:UBR3)SomeparametersA)maximaloperatingcurrent:IOMB)ReversesaturatedVoltage:UBRC)ReverseCurrent:IRD)DifferentialresistancerDiDuDIDUDQiDuDDDDiureueTTUuTUuIsduIsddudididu1*))1((11D)CapacitanceindiodeIncluding：BarrierCapacitanceCBandDiffusionCapacitanceCD。CB：Producedbythechangeofspacechargeunderthevariationalvoltage。CD：Producedbythechangeoftheminoritycarrierunderthevariationalvoltage。P+-NrdRLuiuouiuottApplicationexample1：Half-waverectifierApplicationexample2：tttuiuRuoRRLuiuRuo4)SomespecialdiodesA)ZenerdiodeB)PhotoelectricaldiodeIULightIntensityIncreasedC)Light-emittingdiode2,Semiconductivedynatron(BipolarJunctionTransistor)1)StructureBE(Emitter)C(Collector)NNP(Base)NPNPNPBCEPNPCurrentamplificatorymultipleNote:BEjunctionunderforwardbiasandCBjunctionunderreversebias.BCCBOBCBOCBECEIIIIIIIIB(Base)E(emitter)C(collector)IBIEICNPNBECIBIEICPNP2)I-VCurveICmAAVVUCEUBERBIBECEBInputcharacteristicsUCE1VIB(A)UBE(V)204060800.40.8OperatingVoltage：Si:UBE0.6~0.7V,Ge:UBE0.2~0.3V。UCE=0VUCE=0.5VdeadzonevoltageSi0.5V，Ge0.2V。OutputcharacteristicsIC(mA)1234UCE(V)36912IB=020A40A60A80A100AIC=IBIC(mA)1234UCE(V)36912IB=020A40A60A80A100AUCEUBE,，IBIC，UCE0.3VIC(mA)1234UCE(V)36912IB=020A40A60A80A100AIB=0,IC=ICEO,UBEUd。Outputcharacteristicsummary:(1)AmplifiedZone：UBE0,UCE0;IC=IB,且IC=IB(2)SaturatedZone：UBE0,UCE0;UCEUBE，IBIC，UCE0.3V(3)BlockedZone：UBEUd，IB=0，IC=ICEO03,Fieldeffecttransistor(FET)Conductivityduetomajoritycarriers，Highinputresistance，excellenttemperaturestability。JunctionFET(JFET)Melt-oxidesemicondctorFET(MOSFET)TwokindsofFETs:NPPG(Gate)S(Source)D(Drain)A、Structure1)JunctionFET:NPPG(栅极)S源极D漏极NChannelDGSDGSPNNGSDPChannelDGSDGSB、Operatingmechanism（PChannel）PGSDUDSUGSNNNNPGSDUDSUGSNNNNPGSDUDSUGSNNPGSDUDSUGSNNIDPGSDUDSUGSNNIDGSDUDSUGSNNIDC、I-VCharacteristicsUGS0IDIDSSVPSaturateddraincurrentBlockVoltageTransterI-VCurveID-UGSCurveUndersomeUDSIDUDS2VUGS=0V1V3V4V5VVariableresistanceZoneBlockedZoneSteadyCurrentZoneOutputCharacteristics0TransferCharacteristicsUGS0IDIDSSVPNChanneloutputcharacteristicsIDUDS0UGS=0V-1V-3V-4V-5V2)MOS-FET:A、StructurePNNGSDSiO2insulationlayerChannelMetal(AlorSi)GSDNChannel(Increased)NExhaustedPNNGSDChanneladdedGSDNPPGSDGSDPincreasedPExhaustedNPPGSDGSDChanneladded0IDUGSVTB、NchannelIncreasedoutputcharacteristicsIDUDS0UGS00IDUGSVTNchannelexhaustedoutputcharacteristicsIDUDS0UGS=0UGS0UGS03,Thinfilmtransistor(TFT)1)StructureGInsulationlayerSemiconductivelayerSDOFET的重要参数的工作曲线（I－V曲线）开关比迁移率