BSIM4 manual

BSIM4.3.0MOSFETModel-User’sManualXuemei(Jane)Xi,MohanDunga,JinHe,WeidongLiu,KanyuM.Cao,XiaodongJin,JeffJ.Ou,MansunChan,AliM.Niknejad,ChenmingHuProjectDirector:ProfessorChenmingHuProfessorAliNiknejadDepartmentofElectricalEngineeringandComputerSciencesUniversityofCalifornia,Berkeley,CA94720Copyright©2003TheRegentsoftheUniversityofCaliforniaAllRightsReservedDevelopers:BSIM4.3.0Developers:•ProfessorChenmingHu(projectdirector),UCBerkeley•ProfessorAliM.Niknejad(projectdirector),UCBerkeley•Dr.Xuemei(Jane)Xi,UCBerkeley•Dr.JinHe,UCBerkeley•Mr.MohanDunga,UCBerkeleyDevelopersofBSIM4PreviousVersions:•Dr.WeidongLiu,Synopsys•Dr.XiaodongJin,Marvell•Dr.Kanyu(Mark)Cao,UCBerkeley•Dr.JeffJ.Ou,Intel•Dr.Xuemei(Jane)Xi,UCBerkeley•ProfessorChenmingHu,UCBerkeleyWebSites:BSIM4websitewithBSIMsourcecodeanddocuments:~bsim4.htmlCompactModelCouncil:~CMCTechnicalSupport:Dr.Xuemei(Jane)Xi:[e-mail]:ThedevelopmentofBSIM4.3.0benefitedfromtheinputofmanyBSIMusers,especiallytheCompactModelCouncil(CMC)membercompanies.ThedeveloperswouldliketothankKeithGreen,TomVrotsos,BrittBrooksandDougWeiseratTI,JoeWattsandRichardQWilliamsatIBM,Yu-TaiChia,Ke-WeiSu,Chung-KaiChung,Y-MSheuandJaw-KangHeratTSMC,RainerThoma,IvanTo,Young-BogParkandColinMcAndrewatMotorola,PingChen,JushanXie,andZhihongLiuatCelestry,PaulHumphries,GeoffreyJ.CoramandAndreMartinezatAnalogDevices,AndreJugeandGillesGougetatSTmicroelectronics,MishelMatloubianatMindspeed,JudyAnatAMD,BerndLemaitre,LaurensWeissandPeterKleinatInfinion,Ping-ChinYehandDickDowellatHP,Shiuh-WuuLee,Wei-KaiShih,PaulPackan,SivakumarPMudanaiandRafaelRioatIntel,XiaodongJinatMarvell,WeidongLiuatSynopsys,MarekMierzwinskiatTiburon-DA,Jean-PaulMALZACatSilvaco,PeiYaoandJohnAhearnatCadence,MohamedSelimandAhmedRamadanatMentorGraphics,PeterLeeatHitachi,ToshiyukiSaitoandShigetakaKumashiroatNEC,RichardTayloratNSC,fortheirvaluableassistanceinidentifyingthedesirablemodificationsandtestingofthenewmodel.SpecialacknowledgmentgoestoDr.KeithGreen,ChairmanoftheTechnicalIssuesSubcommitteeofCMC;BrittBrooks,chairofCMC,Dr.JoeWatts,SecretaryofCMC,andDr.Ke-WeiSufortheirguidanceandtechnicalsupport.TheBSIMprojectispartiallysupportedbySRC,andCMC.BSIM4.2.1ManualCopyright©2001UCBerkeley1TableofContentsChapter1:EffectiveOxideThickness,ChannelLengthandChannelWidth1-11.1GateDielectricModel1-11.2Poly-SiliconGateDepletion1-21.3EffectiveChannelLengthandWidth1-5Chapter2:ThresholdVoltageModel2-12.1Long-ChannelModelWithUniformDoping2-12.2Non-UniformVerticalDoping2-22.3Non-UniformLateralDoping:Pocket(Halo)Implant2-52.4Short-ChannelandDIBLEffects2-62.5Narrow-WidthEffect2-9Chapter3:ChannelChargeandSubthresholdSwingModels3-13.1ChannelChargeModel3-13.2SubthresholdSwingn3-5Chapter4:GateDirectTunnelingCurrentModel4-14.1Modelselectors4-24.2VoltageAcrossOxideVox4-24.3EquationsforTunnelingCurrents4-3Chapter5:DrainCurrentModel5-15.1BulkChargeEffect5-15.2UnifiedMobilityModel5-25.3AsymmetricandBias-DependentSource/DrainResistanceModel5-45.4DrainCurrentforTriodeRegion5-55.5VelocitySaturation5-75.6SaturationVoltageVdsat5-85.7Saturation-RegionOutputConductanceModel5-105.8Single-EquationChannelCurrentModel5-16BSIM4.2.1ManualCopyright©2001UCBerkeley25.9NewCurrentSaturationMechanisms:VelocityOvershootandSourceEndVelocityLimitModel5-17Chapter6:BodyCurrentModels6-16.1IiiModel6-16.2IGIDLModel6-2Chapter7:CapacitanceModel7-17.1GeneralDescription7-17.2MethodologyforIntrinsicCapacitanceModeling7-37.3Charge-ThicknessCapacitanceModel(CTM)7-97.4IntrinsicCapacitanceModelEquations7-137.5Fringing/OverlapCapacitanceModels7-19Chapter8:High-Speed/RFModelsm8-18.1Charge-DeficitNon-Quasi-Static(NQS)Model8-18.2GateElectrodeElectrodeandIntrinsic-InputResistance(IIR)Model8-68.3SubstrateResistanceNetwork8-8Chapter9:NoiseModeling9-19.1FlickerNoiseModels9-19.2ChannelThermalNoise9-49.3OtherNoiseSourcesModeled9-7Chapter10:AsymmetricMOSJunctionDiodeModels10-110.1JunctionDiodeIVModel10-110.2JunctionDiodeCVModel10-6Chapter11:Layout-DependentParasiticsModel11-111.1GeometryDefinition11-111.2ModelFormulationandOptions11-3Chapter12:TemperatureDependenceModel12-112.1TemperatureDependenceofThresholdVoltage12-1BSIM4.2.1ManualCopyright©2001UCBerkeley312.2TemperatureDependenceofMobility12-112.3TemperatureDependenceofSaturationVelocity12-212.4TemperatureDependenceofLDDResistance12-212.5TemperatureDependenceofJunctionDiodeIV12-312.6TemperatureDependenceofJunctionDiodeCV12-512.7TemperatureDependencesofEgandni12-8Chapter13:StressEffectModel13-113.1Stresseffectmodeldevelopment13-113.2EffectiveSAandSBforirregularLOD13-2Chapter14:ParameterExtractionMethodology14-114.1Optimizationstrategy14-114.2ExtractionStrategy14-214.3ExtractionProcedure14-3AppendixA:CompleteParameterListA-1A.1BSIM4.0.0ModelSelectors/ControllersA-1A.2ProcessParametersA-3A.3BasicModelParametersA-5A.4ParametersforAsymmetricandBias-DependentRdsModelA-10A.5ImpactIonizationCurrentModelParametersA-11A.6Gate-InducedDrainLeakageModelParametersA-11A.7GateDielectricTunnel