多孔电极平板结构杂化有机半导体毒气传感器的研究

145200610OpticsandPrecisionEngineeringVol.14No.5Oct.2006:2006201216;:2006207221.:(No.GC03A121),(No.60272002)10042924X(2006)0520840207PdPc/H2PtCl6,,,,,(,150080):42,N,N,N2,,243(243.34),DBUPdPc,,,PdPcH2PtCl6,305048h,,,,103,,SEM,,0.12m,,,SEM,2m,0.15m,,,NO2N,0.010%7.45;NOP,0.010%0.25;90s:;;;;;:TP212.1:AStudyonPdPc/H2PtCl6hybridizedorganicsemiconductorpoisongassensorofporouselectrodeflatstructureSHIYun2bo,ZHANGHong2quan,XIANGJin2juan,FENGQiao2hua,HUZhu2ping,GUOJian2ying(CollegeofObservation,ControlTechnologyandCommunicationEngineering,HarbinUniversityofScienceandTechnology,Harbin150080,China)Abstract:Phthalocyaninemolecularfragmentsweresynthesizedintemplate2basedmethodusingmethyphenol,42nitrophthalonitrileasrawmaterialsandN,Ndimethylformamideassolventunderthecatalysisofpotassiuminnitrogenatmosphere.Itsmolecularweightwasconfirmedtobe243(the2oreticalvalueis243.34)throughmassspectrography.Thenthroughthealtogether2dissolve,undertheactionofpentanolandDBU,molecularfragmentsandpalladiumbichlorideweresynthesizedtoformtheatrovirens42methoxybenzoicPdPc.Themeasuredvalueofabsorptionpeakbyinfraredab2sorptionspectroscopywasfundamentallyuniformtothetheoreticalvalue,sothatthesyntheticreac2tionendproductwasdetermined.Further,PdPcandH2PtCl6wasdissolvedincarbinolinagivenpro2portiontosynthesizefor48htoformorganicsemiconductorsensitivematerial.AccordingtoOhmslawandusinglasermicro2machiningandsemiconductortechniques,aporouselectrodeflatstructurewasfabricatedintheelectrodesareaincreasedwhilethespacereduced,itsresistancereducesmorethan103timesthaninterdigitalelectrodeincommonuse,inapproachtoabio2semiconductorsconduc2tivity.Experimentalresultsshowitisgoodforsubsequentcircuitsignal’scollection.Throughelectronscan,itsmirco2appearancewasobservedtobecontinuousandporous.Theairholewas0.12m,thisnotonlyensureitsconductionbutalsohasventilatecharacteristic.Throughvacuumdeposition,thesensitivematerialwasmadetobeasensitivefilm.Underelectronscan,thefilm’sfundamentalthicknesswas2mandhas0.15mmicro2ballcrystalembed,uniformdistributed,appearedcontinualmutualfusegrowth.Usingastaticstatemethodtomeasureitssensitivecharacteristic,themeasurementindicatesthatthesensorappearsNtypesemiconductortoNO2,thesensitivityis7.45timeswhenthegasdensityis0.010%;thesensorappearsPtypesemiconductortoNO,thesensitivi2tyis0.25timeswhenthegasdensityis0.010%;theresponsetimeis90s.Thechangeruletodiffer2entgasesindicatesitsgassensitiveprincipleisrelatedtothegascapability.Keywords:porouselectrode;flatstructure;organicsemiconductor;hybridization;poisongassensor;semiconductorsensor1,,,,2070,MacDjarmidHeeger,,,[122],,,,,,,[3],,,(met2alphthalocyanines,MPc)[4],,,2[5],[6],[729]Langmuir2Blodgett[10212]PdPc,H2PtCl6,,22.1PdPc,,,,,:57g35g4250mLDMF(N,N),N224h,1485,:PdPc/H2PtCl61h,1.4g,,;24h,100mL1h,,;,,12h,Hewlett2PackardAglilent6890/59732,,1,243(243.34),1Fig.1Massspectroscopyofphthalocyaninemo2lecularfragments2.1g40mL,N2,0.51.5g10min,2.5mLDBU,;150,5h,;250mL1mol/L,;60,,,24h,48h,,,,,PerkinElmerInstrumentsSpectrumOneFT2IRSpectrometer,2,29.10102cm-128.51102cm-1CH2CH3,17.50102cm-114.10102cm-12Fig.2Infraredabsorptionspectroscopyofphthalocyaninepalladium,12.50102cm-1,2.2,,,,,25%35%H2PtCl6,,3050,48h,,3PdPc/H2PtCl63PdPc/H2PtCl6Fig.3MolecularstructureofhybridPdPc/H2PtCl6gassensitivematerial33.1,,24814,,,,,;,,,,,106109,10344Fig.4Sketchmapofsensorstructure3.2Al2O3,200nm,JH2043mm3mm:,KGP560CPt,H52210,SB2401B,:PdPc/H2PtCl6DM2450C,210-5Pa,520A;1h,Au,,,,,S244700,5100120A515sSEM,1,,0.12m.,,5SEMFig.5MicroSEMappearanceofsensorsporouse2lectrode610SEMFig.6MicroSEMappearanceofsensitivefilmsfrac2turein100thousandtimes710SEMFig.7MicroSEMappearanceofsensitivefilmssurfacein100thousandtimes68SEMSEM2m,,,,,0.15m,3485,:PdPc/H2PtCl680.1SEMFig.8MicroSEMappearanceofsensitivefilm’ssur2facein1thousandtimes,,,4ZC36,COCl2SO2NOH2SNO2:NONO2,,1NONO2RA/0.01%RG,RA,RG1VHRA/0.01%RGTab.1InfluenceofVHonsensorsRA/0.01%RGVH(V)RA/0.01%RG()NONO200.402.100.50.303.301.00.285.801.50.267.202.00.285.552.50.255.453.0,VH:VH12V(5080),VH2.5V,,,,VHVH1.5V,70,180s90.010%0.005%0.003%NO100.010%0.005%0.003%NO211NO2,12NO:,90s,,NOP,,(),0.250.330.45NO2N,,(),7.456.285.45,NO2,9NOFig.9ResponsesensitivityofsensorinNO,,,4481410NO2Fig.10ResponsesensitivityofsensorinNO211NO2Fig.11Changingcurveofsensorsresistancewithin2creasingNO2desity12NOFig.12ChangingcurveofsensorsresistancewithincreasingNOdesity5,,,,,,,,,,,,:Gas+PcG+PcECTG+Pc+EDG-+Pc+holeG,G-,ECT,ED,,,(O2),,O2,()(NO2),,;(H2SNONH3),()(H2OO2),,,,,():=0exp(-Ea/kT),(1)0,kBoltzmann,T,Ea,,,2eVNO2,5485,:PdPc/H2PtCl6,Nernst:[hole][G]1/2exp{-(ECT+ED)/2kT},(2)ie[hole],ie[G]1/2exp{-(ECT+ED)/2kT},(3)i,,,,,(ECT+ED)/2Ea,,(),,,6,,,,H2PtCl6,,SEMNONO2,,,,:[1]vanOIRSCHOTJGT,VANLEEUWEND,MEDEMAJ.Theeffectofgasesonconductiveproprtiseoforganicsemiconductors[J].JElectroanalChem.,1972,37:3732385.[2]MUKHOPADHYAYS,HOGARTHCA.GassensoringpropertiesofphthalocyanineLangumir2Blodgettfilms[J].Adv.Mater.,1994,6(2):1622164.[3]WRIGHTJD.Gasadsorptiononphthalocyaninesanditseffectsonelectricalproperties[J].ProgressinSurfaceScience.,1989,31:1