认识Mask以及其制作流程

TMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.认识Mask以及简要的制作流程TMTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.TheRoleofMaskinICIndustryDESIGNMASKWAFERTESTINGASSEMBLYTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.HowDoesMaskWorkinWaferFAB-------StepperTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.HowDoesMaskWorkinWaferFAB-------ScannerTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.RawMaterialofMaskBlank•BIM(binarymask)•PSM(phaseshiftmask)A.KRF-PSMB.ARF-PSMTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.SizeofBlank5inch90mil(5009)5inch180mil(5018)6inch120mil(6012)6inch250mil(6025)7inch250mil(7015)WhatkindofmaskSMICFABsuse?TMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.BlankComponentBinaryBlankPSMBlankPhotoResist(3K,4K,4650A)CrO&Chrome(~1050A,700A)QuartzPhotoResist(2K,3K,4KA)CrO&Chrome(1000,~550A)QuartzMoSiFilm•PhotoResist•OpaqueMetalFilm•Substrate•PhotoResist•OpaqueMetalFilm•PhaseShiftLayer•SubstrateTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.BlankQzCharacteristicRigidityHeatExpansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSodalimeSilicon-BorideQuartzCoefficient9.43.70.5TMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.BlankQzCharacteristicOpticsCharacterTransmission(%)200300400020406080100QuartzSilicon-BorideSodaLimeWaveLength(nm)That’swhywechooseQuartzasthesubstrateofblankTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.HowtoTransferDesigntoMask?WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1stInspectThr-InspectSTARlightShippingDevelopStripEtchTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.Front-endProcessBlankconfigurationPhoto-resistCrfilmQuartzExposurePhoto-resistdevelopWetetchPhoto-resiststripAEIASIRe-Etch?AEI:AfterEtchCDmeasureASI:AfterStripCDmeasureStep1Step2Step3Step4Step6Step5Step7TMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.Front-endProcessDryprocessResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure(EB1,EB2,EB3DUV,LB5,LB6)PEB(PostExposureBake)SFB2500,APB5500PAGAcidgenerationAciddiffusionDeprotectionreactionDevelopment(SFD2500,ASP5500)S(CF2)3CF3O3SS(CF2)3CF3O3SH+OHORDryEtch(Gen3,Gen4)AEI,Re-etchStrip,ASITMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.PellicleComponent•PellicleMembraneMaterialWaveLengthN.C.365nm(I-line)C.E.365,248nm(I-line,DUV)F.C.193nm(ArF)•Frame(AluminumAlloy)•AdhesiveTapePellicleMembrane(2~5um)PellicleFrameDoubleSideAdhesiveTapeCrGlassTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.WhatPellicleDo?TopContaminantObjectPlanePellicleFilmBottomContaminantContaminantonPatternPlaneLenSystemUnfocusedTopContaminantImageUnfocusedBottomContaminantImageImagePlaneFocusedContaminantImageonWaferMaskPatternWaferSurfaceLightTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.ParticleImmunityControl•Particlesize(D)V.S.MinimumStand-off(T)T=(4M/N.A.)DM----MagnificationN.A.----NumericalApertureoftheLensForglasssideparticle,T=2.3mmD1T1T2D2TMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceonly,andSMICshallnotbeliableorresponsibleforanyreliance.MaskQualityControl•C.D.•Defect•RegistrationTMThisdocumentisstrictlyconfidentialandproprietaryofSMIC.Itmustnotbecopiedorusedforanypurposeotherthanforreferenceo