您好,欢迎访问三七文档
当前位置:首页 > 行业资料 > 酒店餐饮 > P2803NVG中文资料
1JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEMABSOLUTEMAXIMUMRATINGS(TC=25°CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLN-ChannelP-ChannelUNITSDrain-SourceVoltageVDS30-30VGate-SourceVoltageVGS±20±20VTC=25°C7-6ContinuousDrainCurrentTC=70°CID6-5PulsedDrainCurrent1IDM20-20ATC=25°C2PowerDissipationTC=70°CPD1.3WJunction&StorageTemperatureRangeTj,Tstg-55to150°CTHERMALRESISTANCERATINGSTHERMALRESISTANCESYMBOLTYPICALMAXIMUMUNITSJunction-to-AmbientRθJA62.5°C/W1Pulsewidthlimitedbymaximumjunctiontemperature.2Dutycycle≤1%ELECTRICALCHARACTERISTICS(TC=25°C,UnlessOtherwiseNoted)LIMITSUNITPARAMETERSYMBOLTESTCONDITIONSMINTYPMAXSTATICVGS=0V,ID=250µADrain-SourceBreakdownVoltageV(BR)DSSVGS=0V,ID=-250µAN-ChP-Ch30-30VDS=VGS,ID=250µAGateThresholdVoltageVGS(th)VDS=VGS,ID=-250µAN-ChP-Ch1-11.5-1.52.5-2.5VVDS=0V,VGS=±20VGate-BodyLeakageIGSSVDS=0V,VGS=±20VN-ChP-Ch±100±100nAG:GATED:DRAINS:SOURCEPRODUCTSUMMARYV(BR)DSSRDS(ON)IDN-Channel3027.5m7AP-Channel-3034m-6A2JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEMVDS=24V,VGS=0VVDS=-24V,VGS=0VN-ChP-Ch1-1VDS=20V,VGS=0V,TJ=55°CZeroGateVoltageDrainCurrentIDSSVDS=-20V,VGS=0V,TJ=55°CN-ChP-Ch10-10µAVDS=5V,VGS=10VOn-StateDrainCurrent1ID(ON)VDS=-5V,VGS=-10VN-ChP-Ch20-20AVGS=4.5V,ID=6AVGS=-4.5V,ID=-5AN-ChP-Ch3043.54056VGS=10V,ID=7ADrain-SourceOn-StateResistance1RDS(ON)VGS=-10V,ID=-6AN-ChP-Ch20.527.527.534mVDS=5V,ID=7AForwardTransconductance1gfsVDS=-5V,ID=-6AN-ChP-Ch1613SDYNAMICInputCapacitanceCissN-ChP-Ch680920OutputCapacitanceCossN-ChP-Ch105190ReverseTransferCapacitanceCrssN-ChannelVGS=0V,VDS=15V,f=1MHzP-ChannelVGS=0V,VDS=-15V,f=1MHzN-ChP-Ch75120pFTotalGateCharge2QgN-ChP-Ch1418.5Gate-SourceCharge2QgsN-ChP-Ch1.92.7Gate-DrainCharge2QgdN-ChannelVDS=0.5V(BR)DSS,VGS=10V,ID=7AP-ChannelVDS=0.5V(BR)DSS,VGS=-10V,ID=-6AN-ChP-Ch3.34.5nCTurn-OnDelayTime2td(on)N-ChP-Ch4.67.7711.5RiseTime2trN-ChP-Ch45.768.5Turn-OffDelayTime2td(off)N-ChP-Ch20203030FallTime2tfN-ChannelVDD=10VID≅1A,VGS=10V,RGEN=3P-ChannelVDD=-10VID≅-1A,VGS=-10V,RGEN=3N-ChP-Ch59.5814nS3JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEMSOURCE-DRAINDIODERATINGSANDCHARACTERISTICS(TC=25°C)ContinuousCurrentISN-ChP-Ch1.3-1.3PulsedCurrent3ISMN-ChP-Ch2.6-2.6AIF=1A,VGS=0VForwardVoltage1VSDIF=-1A,VGS=0VN-ChP-Ch1-1V1Pulsetest:PulseWidth≤300µsec,DutyCycle≤2%.2Independentofoperatingtemperature.3Pulsewidthlimitedbymaximumjunctiontemperature.REMARK:THEPRODUCTMARKEDWITH“P2803NVG”,DATECODEorLOT#OrdersforpartswithLead-FreeplatingcanbeplacedusingthePXXXXXXGpartsname.4JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEMN-CHANNELBodyDiodeForwardVoltageVariationwithSourceCurrentandTemperature25°CT=125°CV-BodyDiodeForwardVoltage(V)Is-ReverseDrainCurrent(A)0.00100.010.10.4SD0.20.6V=0V110100AGS1.00.81.2-55°C1.45JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEM6JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEM7JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEMP-CHANNELBodyDiodeForwardVoltageVariationwithSourceCurrentandTemperature25°C-V-BodyDiodeForwardVoltage(V)-Is-ReverseDrainCurrent(A)0.00100.010.10.4SD0.20.6V=0V110100GSAT=125°C1.00.81.2-55°C1.48JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEM9JUL-25-2005N-&P-ChannelEnhancementModeFieldEffectTransistorP2803NVGSOP-8Lead-FreeNIKO-SEMSOIC-8(D)MECHANICALDATAmmmmDimensionMin.Typ.Max.DimensionMin.Typ.Max.A4.84.95.0H0.50.7150.83B3.83.94.0I0.180.2540.25C5.86.06.2J0.22D0.380.4450.51K0°4°8°E1.27LF1.351.551.75MG0.10.1750.25NHCBADEFGIJK
本文标题:P2803NVG中文资料
链接地址:https://www.777doc.com/doc-4192559 .html