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UCC27210UCC27211–NOVEMBER2011–REVISEDFEBRUARY2012120V启动电压、4A峰值电流的高频高端/低端驱动器查询样品:UCC27210,UCC272111特性应用范围2•可驱动两个高端/低端配置中的N通道MOSFET并•针对电信、数据通信和商业市场的电源具有独立输入•半桥式和全桥式转换器•最大启动电压:120VDC•推-拉转换器•4A吸收、4A供电输出电流•高电压同步降压型转换器•0.9-Ω上拉/下拉电阻•两开关正激式转换器•输入引脚电压范围-10V至20V并且独立于电源•有源箝位正激式转换器电压之外•D类音频放大器•TTL或者伪-CMOS兼容输入版本•8-V至17-VVDD运行范围,(最大值20VABS)说明•7.2ns上升和5.5ns下降时间(1000pF负载UCC27210和UCC27211驱动器是基于流行的时)UCC27200和UCC27201MOSFET驱动器设计而成•快速传播延迟(典型值18-ns)的,但相对于之前的产品,此两款器件的性能有很大提•2ns延迟匹配升。峰值输出上拉和下拉电流已经增加至4-A源电•用于高端和低端驱动器的对称欠压闭锁功能流/4-A吸收电流,而上拉/下拉电阻也已经减少到0.9•采用全工业标准(SOIC-8,PowerPAD™Ω,这样的话,在MOSFET的米勒效应平台转换期间,SOIC-8,4-mmx4-mmSON-8和4-mmx4-mm能够在保证最小切换损失的前提下驱动大功率SON-10)封装MOSFET。此输入结构现在能直接处理10VDC,这•额定温度范围-40至140°C增加了耐用性并且也在无需使用整流二极管的情况下实现到栅极驱动变压器的直接接口连接。此输入也与电源电压无关并且最大额定电压为20-V。1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.2PowerPADisatrademarkofTexasInstruments.PRODUCTIONDATAinformationiscurrentasofpublicationdate.版权©2011–2012,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.ProductionprocessingdoesnotEnglishDataSheet:SLUSAT7necessarilyincludetestingofallparameters.PWMCONTROLLER+12VISOLATIONANDFEEDBACK+100VSECONDARYSIDECIRCUITHICONTROLDRIVELODRIVEHIVDDUCC27210VSSLIHBHOHSLOPWMCONTROLLER+12V+100VSECONDARYSIDECIRCUITHICONTROLDRIVELODRIVEHIVDDUCC27211VSSLIHBHOHSLO+12VHICONTROLDRIVELODRIVEHIVDDUCC27211LIHBHOHSLO+100VUCC27210UCC27211ZHCS501B–NOVEMBER2011–REVISEDFEBRUARY2012说明(续)UCC27210/1的开关结点(HS引脚)能够处理最大-18V电压,这样就保护高端通道不受由寄生电感和杂散电容引起的固有负电压带来的损害。UCC27210(伪-CMOS输入)和UCC27211(TTL输入)已经增加了滞后时间,这样就实现了到具有增强抗噪性能的模拟或者数字PWM控制器的接口连接。低端和高端栅极驱动器是独立控制的,它们之间打开和关闭的匹配时间为2ns。片载额定120-V自举二极管省去了对外部分立式二极管的需要。为高端和低端驱动器提供了欠压闭锁功能,如果驱动电压低于规定的门限,则提供对称的打开/关闭性能并将输出强制设为低电平。这两款器件均采用8引脚SOIC(D)、PowerPad™SOIC-8(DDA)、4-mmx4-mmSON-8(DRM)和SON-10(DPR)封装。TypicalApplicationDiagramsORDERINGINFORMATION(1)PACKAGEDDEVICES(1)INPUTTEMPERATURERANGETA=TJPowerPAD™COMPATIBILITYSOIC-8(D)(2)SON-8(DRM)(3)SON-10(DPR)(4)SOIC-8(DDA)(2)PseudoCMOSUCC27210DUCC27210DDAUCC27210DRMUCC27210DPR-40°Cto140°CTTLUCC27211DUCC27211DDAUCC27211DRMUCC27211DPR(1)TheseproductsarepackagedinLead(Pb)-FreeandgreenleadfinishofPdNiAuwhichiscompatiblewithMSLlevel1at255°Cto260°CpeakreflowtemperaturetobecompatiblewitheitherleadfreeorSn/Pbsolderingoperations.(2)D(SOIC-8)andDDA(PowerPad™SOIC-8)packagesareavailabletapedandreeled.AddRsuffixtodevicetype(e.g.UCC27210ADR/UCC27211ADR)toorderquantitiesof2,500devicesperreel.(3)DRM(SON-8)packagecomeseitherinasmallreelof250piecesaspartnumberUCC27210ADRMT/UCC27211ADRMT,orlargerreelsof3000piecesaspartnumberUCC27210ADRMR/UCC27211ADRMR.(4)DPR(SON-10)packagecomeseitherinasmallreelof250piecesaspartnumberUCC27210ADPRT/UCC27211ADPRT,orlargereelsof3000piecesaspartnumberUCC27210ADPRR/UCC27211ADPRR.2Copyright©2011–2012,TexasInstrumentsIncorporatedUCC27210UCC27211–NOVEMBER2011–REVISEDFEBRUARY2012ABSOLUTEMAXIMUMRATINGSoveroperatingfree-airtemperaturerange(unlessotherwisenoted)MINMAXUNITSupplyvoltagerange,VDD(1),VHB-VHS-0.320InputvoltagesonLIandHI,VLI,VHI-1020DC-0.3VDD+0.3OutputvoltageonLO,VLORepetitivepulse100ns(2)-2VDD+0.3DCVHS–0.3VHB+0.3VOutputvoltageonHO,VHORepetitivepulse100ns(2)VHS-2VHB+0.3DC-1115VoltageonHS,VHSRepetitivepulse100ns(2)-18115VoltageonHB,VHB-0.3120HumanBodyModel(HBM)2ESDkVFieldInducedChargedDeviceModel1(FICDM)Operatingvirtualjunctiontemperaturerange,TJ-40150Storagetemperature,TSTG-65150°CLeadtemperature(soldering,10sec.)300(1)AllvoltagesarewithrespecttoVSSunlessotherwisenoted.Currentsarepositiveinto,negativeoutofthespecifiedterminal.(2)Verifiedatbenchcharacterization.RECOMMENDEDOPERATINGCONDITIONSallvoltagesarewithrespecttoVSS;currentsarepositiveintoandnegativeoutofthespecifiedterminal.–40°CTJ=TA140°C(unlessotherwisenoted)PARAMETERMINTYPMAXUNITSupplyvoltagerange,VDD,VHB-VHS81217VoltageonHS,VHS-1105VVoltageonHS,VHS(repetitivepulse100ns)-15110VHS+8,VHS+17,VoltageonHB,VHBVDD–1115VoltageslewrateonHS50V/nsOperatingjunctiontemperaturerange-40140°CCopyright©2011–2012,TexasInstrumentsIncorporated3UCC27210UCC27211ZHCS501B–NOVEMBER2011–REVISEDFEBRUARY2012(1)THERMALMETRICDDDAUNITS8PINS8PINSθJAJunction-to-ambientthermalresistance(2)111.837.7θJCtopJunction-to-case(top)thermalresistance(3)56.947.2θJBJunction-to-boardthermalresistance(4)53.09.6°C/WψJTJunction-to-topcharacterizationparameter(5)7.82.8ψJBJunction-to-boardcharacterizationparameter(6)52.39.4θJCbotJunction-to-case(bottom)thermalresistance(7)n/a3.6(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.(2)Thejunction-to-ambientthermalresistanceundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high
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