74HC138封装英文版

©SemiconductorComponentsIndustries,LLC,2007March,2007−Rev.11PublicationOrderNumber:74HC138/D74HC1381−of−8Decoder/DemultiplexerHigh−PerformanceSilicon−GateCMOSThe74HC138isidenticalinpinouttotheLS138.ThedeviceinputsarecompatiblewithstandardCMOSoutputs;withpullupresistors,theyarecompatiblewithLSTTLoutputs.TheHC138decodesathree−bitAddresstoone−of−eightactive−lowoutputs.ThisdevicefeaturesthreeChipSelectinputs,twoactive−lowandoneactive−hightofacilitatethedemultiplexing,cascading,andchip−selectingfunctions.ThedemultiplexingfunctionisaccomplishedbyusingtheAddressinputstoselectthedesireddeviceoutput;oneoftheChipSelectsisusedasadatainputwhiletheotherChipSelectsareheldintheiractivestates.Features•OutputDriveCapability:10LSTTLLoads•OutputsDirectlyInterfacetoCMOS,NMOSandTTL•OperatingVoltageRange:2.0to6.0V•LowInputCurrent:1.0A•HighNoiseImmunityCharacteristicofCMOSDevices•InCompliancewiththeRequirementsDefinedbyJEDECStandardNo.7A•ESDPerformance:HBM2000V;MachineModel200V•ChipComplexity:100FETsor29EquivalentGates•ThesearePb−FreeDevices−16DSUFFIXCASE751BTSSOP−16DTSUFFIXCASE948F116116116HC138GAWLYWWHC138ALYW116HC138=DeviceCodeA=AssemblyLocationL,WL=WaferLotY=YearW,WW=WorkWeekGor=Pb−FreePackageSeedetailedorderingandshippinginformationinthepackagedimensionssectiononpage2ofthisdatasheet.ORDERINGINFORMATION(Note:Microdotmaybeineitherlocation)74HC138−LOWOUTPUTSADDRESSINPUTSCS3CHIP−SELECTINPUTS546PIN16=VCCPIN8=GNDInputsOutputsCS1CS2CS3A2A1A0Y0Y1Y2Y3Y4Y5Y6Y7XXHXXXHHHHHHHHXHXXXXHHHHHHHHLXXXXXHHHHHHHHHLLLLLLHHHHHHHHLLLLHHLHHHHHHHLLLHLHHLHHHHHHLLLHHHHHLHHHHHLLHLLHHHHLHHHHLLHLHHHHHHLHHHLLHHLHHHHHHLHHLLHHHHHHHHHHLFUNCTIONTABLEH=highlevel(steadystate);L=lowlevel(steadystate);X=don’tcareFigure1.PinAssignment13141516910111254321876A0CS2A2A1Y7CS1CS3GNDY3Y2Y1Y0VCCY5Y4Y6Figure2.LogicDiagramORDERINGINFORMATIONDevicePackageShipping†74HC138DR2GSOIC−16(Pb−Free)2500/Tape&Reel74HC138DTR2GTSSOP−16*2500/Tape&Reel†Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.*ThispackageisinherentlyPb−Free.74HC138(ReferencedtoGND)–0.5to+7.0VVinDCInputVoltage(ReferencedtoGND)–0.5toVCC+0.5VVoutDCOutputVoltage(ReferencedtoGND)–0.5toVCC+0.5VIinDCInputCurrent,perPin±20mAIoutDCOutputCurrent,perPin±25mAICCDCSupplyCurrent,VCCandGNDPins±50mAPDPowerDissipationinStillAir,SOICPackage†TSSOPPackage†500450mWTstgStorageTemperature–65to+150CTLLeadTemperature,1mmfromCasefor10Seconds(SOICorTSSOPPackage)260CStressesexceedingMaximumRatingsmaydamagethedevice.MaximumRatingsarestressratingsonly.FunctionaloperationabovetheRecommendedOperatingConditionsisnotimplied.ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffectdevicereliability.†Derating−SOICPackage:–7mW/Cfrom65to125CTSSOPPackage:−6.1.W/Cfrom65to125CForhighfrequencyorheavyloadconsiderations,seeChapter2oftheONSemiconductorHigh−SpeedCMOSDataBook(DL129/D).RECOMMENDEDOPERATINGCONDITIONSSymbolParameterMinMaxUnitVCCDCSupplyVoltage(ReferencedtoGND)2.06.0VVin,VoutDCInputVoltage,OutputVoltage(ReferencedtoGND)0VCCVTAOperatingTemperature,AllPackageTypes–55+125Ctr,tfInputRiseandFallTimeVCC=2.0V(Figure2)VCC=4.5VVCC=6.0V0001000500400nsThisdevicecontainsprotectioncircuitrytoguardagainstdamageduetohighstaticvoltagesorelectricfields.However,precautionsmustbetakentoavoidapplicationsofanyvoltagehigherthanmaximumratedvoltagestothishigh−impedancecir-cuit.Forproperoperation,VinandVoutshouldbeconstrainedtotherangeGND(VinorVout)VCC.Unusedinputsmustalwaysbetiedtoanappropriatelogicvoltagelevel(e.g.,eitherGNDorVCC).Unusedoutputsmustbeleftopen.74HC138(VoltagesReferencedtoGND)SymbolParameterTestConditionsVCC(V)GuaranteedLimitUnit−55Cto25C85C125CVIHMinimumHigh−LevelInputVoltageVout=0.1VorVCC–0.1V|Iout|20A2.03.04.56.01.52.13.154.21.52.13.154.21.52.13.154.2VVILMaximumLow−LevelInputVoltageVout=0.1VorVCC–0.1V|Iout|20A2.03.04.56.00.50.91.351.80.50.91.351.80.50.91.351.8VVOHMinimumHigh−LevelOutputVoltageVin=VIHorVIL|Iout|20A2.04.56.01.94.45.91.94.45.91.94.45.9VVin=VIHorVIL|Iout|2.4mA|Iout|4.0mA|Iout|5.2mA3.04.56.02.483.985.482.343.845.342.203.705.20VOLMaximumLow−LevelOutputVoltageVin=VIHorVIL|Iout|20A2.04.56.00.10.10.10.10.10.10.10.10.1VVin=VIHorVIL|Iout|2.4mA|Iout|4.0mA|Iout|5.2mA3.04.56.00.260.260.260.330.330.330.400.400.40IinMaximumInputLeakageCurrentVin=VCCorGND6.0±0.1±1.0±1.0AICCMaximumQuiescentSupplyCurrent(perPackage)Vin=VCCorGNDIout=0A6.044040ANOTE:InformationontypicalparametricvaluescanbefoundinChapter2oftheONSemiconductorHigh−SpeedCMOSDataBook(DL129/D).ACELECTRICALCHARACTERISTICS(CL=50pF,Inputtr=tf=6.0ns)SymbolParameterVCC(V)GuaranteedLimitUnit−55Cto25C85C125CtPLH,tPHLMaximumPropagationDelay,InputAtoOutputY(Figures1and4)2.03.04.56.