常见半导体能级图

常用的半导体材料SCEg(eV)lbg(nm)SCEg(eV)lbg(nm)SnO23.5350CdS2.4520ZnO3.2390CdSe1.7730SrTiO33.2390CdTe1.4890TiO23.0410GaAs1.4890Fe2O32.1520InP1.3950GaP2.3540Si1.11130太阳的幅射能Airmass幅射功率光子流平均能量AMW/cm2Ne/sm2eVAM013505.8x10211.48AM110605.0x10211.32AM28804.3x10211.28AM37503.9x10211.21半导体光分解反应热力学稳定性能级图CBVBnEDCBVBCBVBnEDnEDnEDpEDpEDCBVBpEDpED稳定，阴极稳定，阳极稳定，不稳定从反应相应的自由能变化进行热力学计算，可得到半导体的阴极和阳极分解反应的标准平衡电势+-QuantumDotsMetalsCeramicsCarbonsOrganicOpticalMagneticMechanicalElectricalCatalyticSorptive纳米材料及特性临界尺寸(innm)低限高限临界尺寸及现象半导体量子点~15nmforCdSe,emission金属~100nmforAu,scattering陶瓷~40nmformagnetic(Hc)碳-alldifferent,structure-有机物SizedependenceonlyS/VGenerallytrueforisolatednanoparticlesproducedinbottoms-upmethods1nm1nm2nm.7nm1nm15nm100nm50nm2nm100nmReducedDimensionalityBasedonBimberg(1999)BulkQuantumWellQuantumWireQuantumDotEnergyr3D(E)Energyr2D(E)e1e3e2e4Energyr1D(E)e1,1e1,2e1,3Energyr0D(E)Confiningtheelectronmotioninatleastonespatialdimensionaffectstheenergylevelsandthedensityofstates…半导体纳晶多孔薄膜纳米尺寸的半导体超微粒子烧结而构成的粒子相互连接所形成的三维网络多孔结构单粒子的能级量子化微结构的影响无空间电荷层本征导导率电子输运光散射特性e