反转胶lift-Off工艺制备堆栈电感

©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:1007-4252(2010)02-0109-05:2009-01-10;:2009-07-10:(No.10775166);(No.2008C31002).:(1983-),,,SOI(E-mail:[e-mail]).:,,(E-mail:[e-mail]).lift-Off,,,,,(,200050):lift-off,,4m,4m,1m,0.5m,,,:;lift-off;;;SOI:TB34:AFabricationofstackedinductorbyinversionphotoresistlift-offprocessHEDa2wei,CHENGXin2hong,WANGZhong2jian,XUDa2peng,SONGZhao2rui,YUYue2hui(StateKeyLaboratoryofFunctionalMaterialsforInformatics,ShanghaiInstituteofMicrosystemandInformationTechnology,ChineseAcademyofSciences,Shanghai200050,China)Abstract:Inthispaper,thestackedinductorswerefabricatedwiththreemetallayersbytheinversionphotoresistlift-offprocess,andtheeffectofmetaldepositionmethodphotoresistselectionanddryingtimewereanalyzed,finally,theinductorswiththeminimummetallinewidthof4m,theminimumspaceof4mandthemetalthicknessof1mwerefabricated,Thedeviceshavegoodappearancewithhighpro2ductionyieldobservedbytheopticalmicroscopeandstepprofiler.Keywords:stackedinductor;lift-off,metal-stripping;inversionphotoresist;SOI0[1],,,,,N,N,,,Q[2],©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[3],lift-off[4],,,,;,,,[5],,,,lift-offliftoffSOI4m,4m,1m,0.5m,,,lift-off,,11.1AZ5214E,1,,,AZ5214E,,,,,,,,,,,,[6],,,,,,,,1:Fig.1theprocessflowoftheinversionphotoresistlift-off1liftoff,,,,,;,,,,,2.2m1.4m1:1Table1thelithographyparametersfortwokindsofinversionphotoresistthickness:2.2m:1.4m1000rpm,10s2000rpm,10s,100,3min,100,3min90mW/cm2,1.4s90mW/cm2,1.4s,100,3min,100,3min90mW/cm2,6s90mW/cm2,6s100110s6065s135,5min135,5min01116©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:(a)afterinversionphotoresistlithography;(b)aftermetaldeposited2:(a);(b),,,,,,,,,,,,,1354-5min,,,lift-off,,1.2,,,,,1.2.1lift-off,[7],,,,,,,,-lift-off3(a),,,,,1m,0.2m,0.8m,10min,3(b),,,,,,,,,,,,Fig.3(a)theschematicgraphofelectroplatingand(b)mor2phologyofmetallineaftermetal-stripping.3(a)(b),,,,1.2.2lift-offlift-offlift-off,,[8],1112,:lift-Off©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(a),lift-off,,lift-offFig.4Thesectionprofilesof(a)positivephotoresistand(b)inversionphotoresistaftermetaldepositionandmetal-stripping4(a)(b),,,4(b),,,,,,,,,,,5,lift-offlift-offFig.5theeffectcomparisonbetween(a)positivephotoresistand(b)inversionphotoresist5(a)(b)liftoff1.2.3lift-off,,,,,,,,,,,,,6,,,Fig.6(a)thelocaland(b)theglobalmorphologywhenpho2toresistisnotdried6(a)(b),20s,,,,7Fig.7(a)theglobaland(b)thelocalmorphologyofsurfacecorrodedbyphosphoricacid7(a)(b),,,,,,,,21116©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:(a)theglobalmorphologyand(b)thelocalmorphology8:(a);(b),,,,4m,1m,0.5m,2m,,lift-off2,liftoff,4m,4m,1m,0.5m,,,,,lift-offlift-off,:(1),(2),,,,(3)lift-off,lift-off,(4),,:[1]LimCC,YeoKS,ChewK.W,etal.Equivalentcircuitmodelofastackedinductorforhigh-Qon-chipRFap2plications[J].IEEProc.-CircuitsDevicesSyst.,2006,153(6):525-532[2]SeungWP,KwangSS.Air-GapStackedSpiralInductor[J].IEEEMicrowaveAndGuidedWaveLetters,1997,7(10):329-331[3]MichaelQ,JulianS,.[M].,2006,301302[4]DolanGJ.Offsetmasksforlift-offphotoprocessing.Ap2pliedPhysicsLetters[J],1977,31(5):337-339[5],.[J].,2001,23(1):68-73[6]PengY.Three-dimensionalphotolithographybasedonim2agereversal[A].ProcofSPIE5342[C],2004,165.[7]FabianR,PaulM.IntroductionofCompleteSputteringMet2allizationinConjunctionwithCO2SnowLift-OffforHighVolumeGaAsManufacturing[A].GaAsMantechconfer2ence[C].2002.[8]PaulM,DougP.Innovativemetallift-offprocessusingdrycarbondioxide[A].GaAsMantech[C],2001.3112,:lift-Off