BSC119N03S中文资料

BSC119N03SGOptiMOS®2Power-TransistorFeatures•FastswitchingMOSFETforSMPS•OptimizedtechnologyfornotebookDC/DCconverters•QualifiedaccordingtoJEDEC1)fortargetapplications•N-channel•Logiclevel•ExcellentgatechargexRDS(on)product(FOM)•Verylowon-resistanceRDS(on)•Superiorthermalresistance•Avalancherated•Pb-freeplating;RoHScompliantMaximumratings,atTj=25°C,unlessotherwisespecifiedParameterSymbolConditionsUnitContinuousdraincurrentIDTC=25°C30ATC=100°C30TA=25°C,RthJA=45K/W2)11.9PulseddraincurrentID,pulseTC=25°C3)120Avalancheenergy,singlepulseEASID=30A,RGS=25Ω60mJReversediodedv/dtdv/dtID=30A,VDS=24V,di/dt=200A/µs,Tj,max=150°C6kV/µsGatesourcevoltageVGS±20VPowerdissipationPtotTC=25°C43WTA=25°C,RthJA=45K/W2)2.8OperatingandstoragetemperatureTj,Tstg-55...150°CIECclimaticcategory;DINIEC68-155/150/56ValueVDS30VRDS(on),max11.9mΩID30AProductSummaryTypePackageOrderingCodeMarkingBSC119N03SGP-TDSON-8Q7042S4292119N03SP-TDSON-8P-TDSON-8Rev.1.01page12004-12-15BSC119N03SGParameterSymbolConditionsUnitmin.typ.max.ThermalcharacteristicsThermalresistance,junction-caseRthJC--2.9K/WThermalresistance,RthJAminimalfootprint--62junction-ambient6cm2coolingarea2)--45Electricalcharacteristics,atTj=25°C,unlessotherwisespecifiedStaticcharacteristicsDrain-sourcebreakdownvoltageV(BR)DSSVGS=0V,ID=1mA30--VGatethresholdvoltageVGS(th)VDS=VGS,ID=20µA1.21.62ZerogatevoltagedraincurrentIDSSVDS=30V,VGS=0V,Tj=25°C-0.11µAVDS=30V,VGS=0V,Tj=125°C-10100Gate-sourceleakagecurrentIGSSVGS=20V,VDS=0V-10100nADrain-sourceon-stateresistanceRDS(on)VGS=4.5V,ID=25A-14.418mΩVGS=10V,ID=30A-9.911.9GateresistanceRG-1-ΩTransconductancegfs|VDS|2|ID|RDS(on)max,ID=30A2243-S1)J-STD20andJESD22Values2)Deviceon40mmx40mmx1.5mmepoxyPCBFR4with6cm2(onelayer,70µmthick)copperareafordrainconnection.PCBisverticalinstillair.2)Seefigure3Rev.1.01page22004-12-15BSC119N03SGParameterSymbolConditionsUnitmin.typ.max.DynamiccharacteristicsInputcapacitanceCiss-10301370pFOutputcapacitanceCoss-370490ReversetransfercapacitanceCrss-5075Turn-ondelaytimetd(on)-3.85.8nsRisetimetr-3.45.1Turn-offdelaytimetd(off)-1523Falltimetf-2.63.9GateChargeCharacteristics3)GatetosourcechargeQgs-3.34.4nCGatechargeatthresholdQg(th)-1.62.2GatetodrainchargeQgd-2.13.2SwitchingchargeQsw-3.85.4GatechargetotalQg-811GateplateauvoltageVplateau-3.2-VGatechargetotal,sync.FETQg(sync)VDS=0.1V,VGS=0to5V-79nCOutputchargeQossVDD=15V,VGS=0V-811ReverseDiodeDiodecontinousforwardcurrentIS--30ADiodepulsecurrentIS,pulse--120DiodeforwardvoltageVSDVGS=0V,IF=30A,Tj=25°C-0.931.2VReverserecoverychargeQrrVR=15V,IF=IS,diF/dt=400A/µs--10nC3)Seefigure16forgatechargeparameterdefinitionTC=25°CValuesVGS=0V,VDS=15V,f=1MHzVDD=15V,VGS=10V,ID=15A,RG=2.7ΩVDD=15V,ID=15A,VGS=0to5VRev.1.01page32004-12-15BSC119N03SG1Powerdissipation2DraincurrentPtot=f(TC)ID=f(TC);VGS≥10V3Safeoperatingarea4Max.transientthermalimpedanceID=f(VDS);TC=25°C;D=0ZthJC=f(tp)parameter:tpparameter:D=tp/T1µs10µs100µs1ms10msDC10210110010-110310210110010-10.111010010000.1110100VDS[V]ID[A]limitedbyon-stateresistancesinglepulse0.010.020.050.10.20.510-110-210-310-410-510-610110010-110-20.010.1110000000tp[s]ZthJC[K/W]0102030405004080120160TC[°C]Ptot[W]01020304004080120160TC[°C]ID[A]Rev.1.01page42004-12-15BSC119N03SG5Typ.outputcharacteristics6Typ.drain-sourceonresistanceID=f(VDS);Tj=25°CRDS(on)=f(ID);Tj=25°Cparameter:VGSparameter:VGS7Typ.transfercharacteristics8Typ.forwardtransconductanceID=f(VGS);|VDS|2|ID|RDS(on)maxgfs=f(ID);Tj=25°Cparameter:Tj3.2V3.4V3.7V4V4.5V10V05101520253001020304050ID[A]RDS(on)[mΩ]25°C150°C01020304050607080012345VGS[V]ID[A]0102030405060700102030405060ID[A]gfs[S]2.8V3V3.2V3.4V3.7V4V4.5V10V010203040506070800123VDS[V]ID[A]Rev.1.01page52004-12-15BSC119N03SG9Drain-sourceon-stateresistance10Typ.gatethresholdvoltageRDS(on)=f(Tj);ID=30A;VGS=10VVGS(th)=f(Tj);VGS=VDSparameter:ID11Typ.capacitances12ForwardcharacteristicsofreversediodeC=f(VDS);VGS=0V;f=1MHzIF=f(VSD)parameter:Tjtyp98%048121620-60-202060100140180Tj[°C]RDS(on)[mΩ]20µA200µA00.511.522.5-60-202060100140180Tj[°C]VGS(th)[V]CissCossCrss104103102101101001000100000102030VDS[V]C[pF]25°C150°C25°C,98%150°C,98%10310210110010-100.511.52VSD[V]IF[A]Rev.1.01page62004-12-15BSC119N03SG13Avalanchecharacteristics14Typ.gatechargeIAS=f(tAV);RGS=25ΩVGS=f(Qgate);ID=15Apulsedparameter:Tj(start)parameter:VDD15Drain-sourcebreakdownvoltage16GatechargewaveformsVBR(DSS)=f(Tj);ID=1mA6V15V24V0246810120481216Qgate[nC]VGS[V]202224262830323436-60-202060100140180Tj[°C]VBR(DSS)[V]VGSQgateVgs(th)Qg(th)QgsQgdQswQg25°C100°C125°C1101001101001000tAV[µs]IAV[A]Rev.1.01page72004-12-15BSC119N03SGPackageOutlineP-TDSON-8:OutlineFootprintDimensionsinmmRev.1.01page82004-12-15BSC119N03SGPackageOutlineP-TDSON-8:TapeDimensionsinmmRev.1.01page92004-12-15BSC119N03SGPublishedbyInfineonTechnologiesAGBereichKommunikationSt.-Martin-Straße53D-81541München©InfineonTechnologiesAG1999AllRightsReserved.Attentionplease!Theinformationhereinisgiventodescribecertaincomponentsandshallnotbeconsideredaswarrantedcharacteristics.Termsofdeliveryandrightstotechnicalchangereserved.Weherebydisclaimanyand