CNY17F中文资料

5–1FEATURES•HighCurrentTransferRatioCNY17F-1,40-80%CNY17F-2,63-125%CNY17F-3,100-200%CNY17F-4,160-320%•BreakdownVoltage,5300VACRMS•HighCollector-EmitterVoltage•VCEO=70V•NoBaseTerminalConnectionforImprovedCommonModeInterfaceImmunity•Field-EffectStablebyTRIOS*•LongTermStability•IndustryStandardDual-in-LinePackage•UnderwritersLabFile#E52744•VDE#0884,AvailablewithOption1MaximumRatings(TA=25C)EmitterReverseVoltage................................................6VDCForwardCurrent....................................60mASurgeForwardCurrent(t£10ms)...................2.5ATotalPowerDissipation............................100mWDetectorCollector-EmitterBreakdownVoltage.............70VCollectorCurrent..........................................50mACollectorCurrent(t£1ms).........................100mATotalPowerDissipation............................150mWPackageIsolationTestVoltage(betweenemitteranddetectorreferredtostandardclimate23/50DIN50014)....................................5300VACRMSCreepage....................................................7mmClearance...................................................7mmIsolationThicknessbetweenEmitterandDetector.........................................‡0.4mmComparativeTrackingIndexperDINIEC112/VDE0303,part1......................175IsolationResistance(V10=500V).................‡1011WStorageTemperatureRange............–55to+150CAmbientTemperatureRange...........–55to+100CJunctionTemperature...................................100CSolderingTemperature(max.10s,dipsoldering:distancetoseatingplane‡1.5mm)..........260C*TRIOS—TRansparentIOnShieldVDEDESCRIPTIONTheCNY17FisanoptocouplerconsistingofaGalliumArsenideinfraredemittingdiodeopticallycoupledtoasiliconplanarphototransistordetectorinaplasticplug-inDIP-6package.Thecouplingdeviceissuitableforsignaltransmissionbetweentwoelectricallyseparatedcircuits.Thepotentialdifferencebetweenthecir-cuitstobecoupledisnotallowedtoexceedthemaximumpermissiblereferencevoltages.IncontrasttotheCNY17Series,thebaseterminaloftheFtypeisnotconnected,resultinginasubstantiallyimprovedcommon-modeinterfer-enceimmunity.Characteristics(TA=25C)SymbolUnitConditionEmitterForwardVoltageVF1.25(£1.65)VIF=60mABreakdownVoltageVBR‡‡‡6VIR=10mAReverseCurrentIR0.01(£10)mAVR=6VCapacitanceCO25pFVR=0V,f=1MHzThermalResistanceRthJA750K/WDetectorCapacitanceCCE5.2pFVCE=5V,f=1MHzThermalResistanceRthJA500K/WPackageSaturationVoltage,Collector-EmitterVCEsat0.25(£0.4)VIF=10mAIC=2.5mACouplingCapacitanceCC0.6pFDimensionsininches(mm).010(.25).014(.35).110(2.79).150(3.81).130(3.30).150(3.81).020(.051)min..300(7.62)typ..031(0.80).035(0.90).100(2.54)typ..039(1.00)Min..018(0.45).022(0.55).248(6.30).256(6.50).335(8.50).343(8.70)PinOneID65412318°typ..300(7.62).347(8.82)4°typ.123654BaseCollectorEmitterAnodeCathodeNCCNY17FSERIESPHOTOTRANSISTORNOBASECONNECTIONOPTOCOUPLER5–2CNY17FFigure3.Currenttransferratioversusdiodecurrent(TA=–25C,VCE=5V)IC/IF=f(IF)Figure4.Currenttransferratioversusdiodecurrent(TA=0C,VCE=5V)IC/IF=f(IF)Figure5.Currenttransferratioversusdiodecurrent(TA=25C,VCE=5V)IC/IF=f(IF)CurrentTransferRatio(IC/IFatVCE=5V,25C)andCollector-EmitterLeakageCurrentbydashnumberFigure1.Linearoperation(withoutsaturation)IF=10mA,VCC=5V,TA=25CFigure2.Switchingoperation(withsaturation)-1-2-3-4UnitIC/IFatVCE=5V(IF=10mA)40–8063-125100–200160–320%IC/IFatVCE=5V(IF=1mA)30(13)45(22)70(34)90(56)%Collector-EmitterLeakageCurrent(VCE=10V)(ICEO)2(£50)2(£50)5(£100)5(£100)nALoadResistanceRL75WTurn-OnTimetON3.0msRiseTimetR2.0msTurn-OffTimetOFF2.3msFallTimetf2.0msCut-OffFrequencyfCO250kHz-1(IF=20mA)-2and-3(IF=10mA)-4(IF=5mA)Turn-OnTimetON3.04.26.0msRiseTimetR2.03.04.6msTurn-OffTimetOFF182325msFallTimetF111415msRL=75ΩVCC=5VIC47ΩIFIF1KΩVCC=5V47Ω5–3CNY17FFigure12.SaturationvoltagecurrentandmodulationCNY17F-1VCEsat=f(IC)(TA=25C)Figure13.SaturationvoltageversuscollectorcurrentandmodulationdepthCNY17F-2VCEsat=f(IC)(TA=25C)Figure14.SaturationvoltageversuscollectorcurrentandmodulationdepthCNY17F-3VCEsat=f(IC)(TA=25C)Figure9.OutputcharacteristicsCNY17F-2,-3(TA=25C)IC=f(VCE)Figure10.ForwardvoltageVF=f(IF)Figure11.Collectoremitteroff-statecurrentICEO=f(V,T)(TA=75C,IF=0)Figure6.Currenttransferratioversusdiodecurrent(TA=50C)VCE=5VFigure7.Currenttransferratioversusdiodecurrent(TA=75C)VCE=5VFigure8.Currenttransferratioversustemperature(IF=10mA,VCE=5V)IC/IF=f(T)5–4CNY17FFigure19.TransistorcapacitanceC=f(VO)(TA=25C,f=1MHz)Figure17.Permissiblepowerdissipa-tiontransistoranddiodePtot=f(TA)Figure18.PermissibleforwardcurrentdiodeIF=f(TA)Figure15.SaturationvoltageversuscollectorcurrentandmodulationdepthCNY17F-4VCEsat=f(IC)(TA=25C)Figure16.PermissiblepulseloadD=parameter,TA=25C,IF=f(tp)