H9DA4GH4JJAMCR

Thisdocumentisageneralproductdescriptionandissubjecttochangewithoutnotice.Hynixdoesnotassumeanyresponsibilityforuseofcircuitsdescribed.Nopatentlicensesareimplied.Rev1.1/Mar.20111MCPSpecification4Gb(256Mbx16)NANDFlash+4Gb(64Mbx322/CS2CKE)mobileDDRRev1.1/Mar.20102H9DA4GH4JJAMCRseriesNAND4Gb(x16)/mobileDDR4Gb(x322CS)DocumentTitleMCP4Gb(256Mbx16)NANDFlash/4Gb(2*64Mbx322CS2CKE)DDRRevisionHistoryRevisionNo.HistoryDraftDateRemark0.1InitialDraft-4GbNANDFlashD-Die-4GbmobileDDR(2x2GbMobileDDDRA-Die)Oct.2010Preliminary1.0FirstversionNov.20101.1EditorialChangeMar.2011Rev1.1/Mar.20103H9DA4GH4JJAMCRseriesNAND4Gb(x16)/mobileDDR4Gb(x322CS)FEATURES[MCP]●OperationTemperature--30oC~85oC●Packcage-137-ballFBGA-10.5x13.0mm2,1.2t,0.8mmpitch-Lead&HalogenFree[NANDFlash]●MultiplaneArchitecture●SupplyVoltage-Vcc=1.7-1.95V●MemoryCellArray-(1K+32)wordsx64pagesx4096blocks●PageSize-(1K+32spare)Words●BlockSize-(64K+2Kspare)Words●PageRead/Program-Randomaccess:25us(max.)-Sequentialaccess:45ns(min.)-Pageprogramtime:250us(typ.)-Multi-pageprogramtime(2pages):250us(typ.)●COPYBACKPROGRAM-Automaticblockdownloadwithoutlatencytime●FASTBLOCKERASE-Blockerasetime:3.5ms(typ.)-Multi-blockerasetime(2blocks):3.5ms(typ.)●CACHEREAD-Internal(2048+64)Bytebuffertoimprovethereadthroughtput.●STATUSREGISTER-NormalStatusRegister(Read/Program/Erase)-ExtendedStatusRegister(EDC)●BLOCKPROTECTION-ToProtectBlockagainstWrite/Erase●HARDWAREDATAPROTECTION-Program/EraselockedduringPowertransitions.●DATARETENTION-100,000Program/Erasecycles(with1bit/528ByteECC)-10YearDataretention[DDRSDRAM]●DoubleDataRatearchitecture-twodatatransferperclockcycle●x32buswidth●SupplyVoltage-VDD/VDDQ=1.7-1.95V●MemoryCellArray-16Mbx4Bankx32I/Ox2Die●Bidirectionaldatastrobe(DQS)●Inputdatamasksignal(DQM)●InputClock-DifferentialClockInputs(CK,/CK)●MRS,EMRS-JEDECStandardguaranteed●CASLatency-ProgrammableCASlatency2or3supported●BurstLength-Programmableburstlength2/4/8withbothsequen-tialandinterleavemodeRev1.1/Mar.20104H9DA4GH4JJAMCRseriesNAND4Gb(x16)/mobileDDR4Gb(x322CS)ORDERINGINFORMATIONPartNumberMemoryCombinationOperationVoltageDensitySpeedPackageH9DA4GH4JJAMCRR-46MNANDFlashmobileDDR1.8V1.8V4Gb(256Mbx16)4Gb(64Mbx32x2dies)45nsDDR333137BallFBGA(Lead&HalogenFree)H9DA4GH4JJAMCR-4QMNANDFlashmobileDDR1.8V1.8V4Gb(256Mbx16)4Gb(64Mbx32x2dies)45nsDDR370137BallFBGA(Lead&HalogenFree)H9DA4GH4JJAMCR-4EMNANDFlashmobileDDR1.8V1.8V4Gb(256Mbx16)4Gb(64Mbx32x2dies)45nsDDR400137BallFBGA(Lead&HalogenFree)Rev1.1/Mar.20105H9DA4GH4JJAMCRseriesNAND4Gb(x16)/mobileDDR4Gb(x322CS)BallAssignmentABCDEFGHJKLM91012345678NPRDNUDNUDNUNCVSSVDDA6A12NCVDDVSSWE#A1VDDIO0NCDNUTopView137ball10.5x13MCP(x16SLCNAND+x32LPDDR)DRAMCommend/AddressDRAMDataIOPower(DRAM:VDD,VDDQ/NAND:VCC)Ground(DRAM:VSS,VSSQ/NAND:VSSn)SLCNANDCommend/IOCKE1A4A5A8A11RAS#CAS#CS0#BA1A2VSSIO1IO8DNURE#WP#A7CKE0CS1#DQ15DQ20BA0A10A3A13IO2IO9CLEALEA9DQ18DQ17DQ16DQ21DQ14A0DQ0NCIO10IO11VCCnVSSnDQ25DQS3DQ19DQS1DQ13DQ11DQ7DQ1IO3VCCIO12CE#R/B#DQ27DQ22DQ24DQM1DQ12DQ10DQ8DQ2IO5IO6VSSnWEn#DQ31DQ29DQM3DQ23DQ9DQS2DQS0DQ6DQ3IO14IO13IO4VDDDQ30DQ28DQ26DQM2CLKCLK#DQM0DQ4DQ5IO7IO15VDDVSSVDDQVSSQVDDQVSSQVDDQVSSVSSQVDDQVDDQVSSQVDDQVSSDNUNCVSSQVDDQVSSQVDDQVSSQVDDVDDQVSSQVSSQVDDQVSSQNCDNU91012345678ABCDEFGHJKLMNPRRev1.1/Mar.20106H9DA4GH4JJAMCRseriesNAND4Gb(x16)/mobileDDR4Gb(x322CS)PinDescription4Gb(256Mbx16)NANDFlash4Gb(2*64Mbx322CS2CKE)mobileDDRCommonSYMBOLDESCRIPTIONI/O0~I/O15DataInput/OutputCLECommandLatchEnableALEAddressLatchEnableCEChipEnableWEWriteEnableREReadEnableWPWriteProtectR/BReady/BusyOutVCCSupplyVoltageVSSGroundCK,CKDifferentialClockInputsCKE0,CKE1ClockEnableCS0,CS1ChipSelectRAS,CAS,WECommandInputsBA0,BA1BankAddressInputsA0~A13AddressInputsDQ0~DQ31DataBusDQM0~DQM3InputDataMaskDQS0~DQS3DataStrobeVDDPowerSupplyVSSGroundVDDQI/OPowerSupplyVSSQI/OGroundDNUDoNotUseNCNoConnectionRev1.1/Mar.20107H9DA4GH4JJAMCRseriesNAND4Gb(x16)/mobileDDR4Gb(x322CS)PACKAGEINFORMATION137Ball0.8mmpitch10.5mmx13.0mm(t=1.2mm)FBGA10.500.80(Typ)0.260+/-0.050.45+/-0.051.2maxPost-reflowDiameterABCDEFGHJKLM91012345678NPRUnit[mm]A1INDEXMARKBottomView0.401.650.80(Typ)0.906.5013.00Rev1.1/Mar.20108H9DA4GH4JJAMCRseriesNAND4Gb(x16)/mobileDDR4Gb(x322CS)4Gb(256Mbx16)NANDFLASHD-DieRev1.1/Mar.20109H9DA4GH4JJAMCRseriesNAND4Gb(x16)/mobileDDR4Gb(x322CS)1SummaryDescriptionTheHynixNANDFlashhasa256Mx16bitwithspare16Mx8bitcapacity.Thedeviceisofferedin1.8VccPowerSupply,andwithx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedintoblocksthatcanbeerasedindependentlysoitispossibletopreservevaliddatawhileolddataiserased.Thedevicecontains4096blocks,composedby64pages.Memoryarrayissplitinto2planes,eachofthemconsistingof2048blocks.Likeallother2KB-pageNANDFlashdevices,aprogramoperationallowstowritethe2112-bytepageintypical250usandaneraseoperationcanbeperformedintypical3.5msona128K-byteblock.Inadditiontothis,thankstomulti-planearchitecture,itispossibletoprogram2pagesatatime(onepereachplane)ortoerase2blocksatatime(again,onepereachplane).Asaconsequence,multi-planearchitectureal